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    LIGHT-EMITTING DIODE
    11.
    发明申请
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20170005227A1

    公开(公告)日：2017-01-05

    申请号：US15266249

    申请日：2016-09-15

    Applicant: EPISTAR CORPORATION

    Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

    IPC: H01L33/10 ,  H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

    Abstract translation: 发光二极管包括用于发射光线的有源层; 在所述有源层上的上半导体堆叠，其中所述上半导体堆叠包括窗口层; 反射器 以及在所述有源层和所述反射器之间的下半导体堆叠; 其中所述窗口层的厚度小于或等于3μm，并且所述下半导体叠层的厚度小于或等于1μm。

    Semiconductor light-emitting device
    12.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US09490394B2

    公开(公告)日：2016-11-08

    申请号：US14996744

    申请日：2016-01-15

    Applicant: EPISTAR CORPORATION

    Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  Chih-Chiang Lu

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/30 ,  H01L33/50

    CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505

    Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.

    Abstract translation: 半导体发光器件包括外延结构，该外延结构包括第一半导体叠层，第二半导体叠层以及用于发射光的第一半导体叠层和第二半导体叠层之间的有源层; 以及在第一半导体堆叠上的主光提取表面，其中光穿过主光提取表面。 主光提取表面包括第一光提取区域，第二光提取区域和最大近场发光强度。 第一光提取区域中的近场发光强度的分布在最大近场发光强度的70％至100％之间，第二光提取区域中的近场发光强度的分布在 0％和70％的最大近场发光强度。 第一光提取区域的面积与第二光提取区域的面积的比率在0.25和0.45之间。

    Light-emitting device
    14.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US11600749B2

    公开(公告)日：2023-03-07

    申请号：US16003866

    申请日：2018-06-08

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

    IPC: H01L33/42 ,  H01L33/38

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Light-emitting device
    16.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09601667B2

    公开(公告)日：2017-03-21

    申请号：US15004450

    申请日：2016-01-22

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh Liao ,  Hung-Ta Cheng ,  Yao-Ru Chang ,  Shih-I Chen ,  Chia-Liang Hsu

    IPC: H01L33/36 ,  H01L33/46 ,  H01L33/06 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

    Light-emitting device
    17.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09276176B2

    公开(公告)日：2016-03-01

    申请号：US14515147

    申请日：2014-10-15

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh Liao ,  Hung-Ta Cheng ,  Yao-Ru Chang ,  Shih-I Chen ,  Chia-Liang Hsu

    IPC: H01L33/36 ,  H01L33/46 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

    Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the refractive index of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.

    Abstract translation: 发光装置包括：具有活性层的发光叠层; 在发光叠层上的透明绝缘层; 以及在透明绝缘层上具有第一电极的电极结构; 其中，所述第一电极的远离所述透明绝缘层的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积，所述透明绝缘层的折射率在1 和3.4，并且透明绝缘层的透射率大于80％。

    Light-emitting device
    19.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08941144B2

    公开(公告)日：2015-01-27

    申请号：US13901191

    申请日：2013-05-23

    Applicant: Epistar Corporation

    Inventor： Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Jhih-Sian Wang ,  Chien-Fu Huang ,  Shih-I Chen

    IPC: H01L33/22 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

    Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

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