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    Semiconductor light-emitting device
    12.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US09337394B2

    公开(公告)日：2016-05-10

    申请号：US14554488

    申请日：2014-11-26

    Applicant: Epistar Corporation

    Inventor： Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

    IPC: H01L33/38 ,  H01L33/22 ,  H01L33/46

    CPC classification number: H01L33/382 ,  H01L33/08 ,  H01L33/22 ,  H01L33/46

    Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.

    Abstract translation: 半导体发光器件包括半导体叠层，其包括侧面，第一表面和与第一表面相对的第二表面，其中半导体堆叠还包括从第一表面延伸到第二表面的导电通孔; 形成在所述第二表面上的透明导电层; 第一焊盘部分和第二焊盘部分，形成在第一表面上并电连接到半导体堆叠; 以及形成在第一焊盘部分和半导体堆叠之间以及在第二焊盘部分和半导体堆叠之间的绝缘层。

    Semiconductor device
    17.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10461223B2

    公开(公告)日：2019-10-29

    申请号：US16128604

    申请日：2018-09-12

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu Chang ,  Hsin-Chan Chung ,  Hung-Ta Cheng ,  Wen-Luh Liao ,  Shih-Chang Lee ,  Chih-Chiang Lu ,  Yi-Ming Chen ,  Yao-Ning Chan ,  Chun-Fu Tsai

    IPC: H01L33/38 ,  H01L33/30

    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

    Light-emitting diode device
    18.
    外观设计
    Light-emitting diode device 有权

    公开(公告)号：USD1040117S1

    公开(公告)日：2024-08-27

    申请号：US29915273

    申请日：2023-10-27

    Applicant: EPISTAR CORPORATION

    Designer： Yao-Ning Chan ,  Tzu-Yun Feng ,  Yun-Ya Chang

    Abstract: FIG. 1 is a perspective view of a light-emitting diode device showing our new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof;
    FIG. 4 is a left side elevational view thereof;
    FIG. 5 is a right side elevational view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.

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