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    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140162386A1

    公开(公告)日：2014-06-12

    申请号：US13707168

    申请日：2012-12-06

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Yi-Ming Chen ,  Yi-Tang Lai ,  Chia-Liang Hsu ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu

    IPC: H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

    Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供包括表面的多层半导体膜; 使多层半导体膜的表面粗糙化，形成散射面; 在散射表面上重新生长半导体层; 并使所述半导体层变粗糙以在所述散射面上形成副散射部; 其中所述副散射部分在结构上小于所述散射表面。

    Semiconductor light-emitting device and semiconductor light-emitting component
    5.
    发明授权
    Semiconductor light-emitting device and semiconductor light-emitting component 有权

    公开(公告)号：US12230736B2

    公开(公告)日：2025-02-18

    申请号：US17211331

    申请日：2021-03-24

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi Chen ,  Yen-Chun Tseng ,  Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou

    IPC: H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/36 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

    Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11121285B2

    公开(公告)日：2021-09-14

    申请号：US16680207

    申请日：2019-11-11

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu Chang ,  Hui-Fang Kao ,  Yi-Tang Lai ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei Chun Liu ,  Yao-Ru Chang ,  Yi Hisao

    IPC: H01L33/14 ,  H01L33/40 ,  H01L25/075

    Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

    Light-emitting diode device
    7.
    发明授权
    Light-emitting diode device 有权
    发光二极管装置

    公开(公告)号：US08860046B2

    公开(公告)日：2014-10-14

    申请号：US13767217

    申请日：2013-02-14

    Applicant: Epistar corporation

    Inventor： Jhih-Sian Wang ,  Chia-Liang Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai

    IPC: H01L29/18 ,  H01L27/15 ,  F21K99/00 ,  H01L25/075 ,  F21Y101/02 ,  H01L33/38 ,  F21Y105/00

    CPC classification number: H01L25/0753 ,  F21K9/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00

    Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.

    Abstract translation: 公开了一种二维阵列发光二极管装置，其包括：包括第一表面的透明基板; 布置在第一表面上的多个相邻的发光二极管单元，其中每个发光二极管单元包括多个边和圆周; 以及布置在所述第一表面上的多个导电连接结构，电连接上述多个发光二极管单元; 其中每个发光二极管单元的侧面在最近的发光二极管单元之间具有多个垂直距离，并且当多个垂直距离大于50μm时，侧面不在最近的发光二极管附近 单位; 其中，各个发光二极管单元的发光二极管单元附近的边的总长度与发光二极管单元的周长之比大于50％。

    Light emitting device having a light extraction layer
    10.
    发明授权
    Light emitting device having a light extraction layer 有权
    具有光提取层的发光器件

    公开(公告)号：US09478698B2

    公开(公告)日：2016-10-25

    申请号：US14174036

    申请日：2014-02-06

    Applicant: Epistar Corporation

    Inventor： Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai ,  Jhih-Jheng Yang ,  Chih-Wei Wei ,  Ching-Sheng Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Ye-Ming Hsu

    IPC: H01L33/02 ,  H01L33/00

    CPC classification number: H01L33/02 ,  H01L33/0079

    Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

    Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。

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