11.
    发明专利
    未知

    公开(公告)号:DE69724159D1

    公开(公告)日:2003-09-18

    申请号:DE69724159

    申请日:1997-09-19

    Applicant: IBM

    Abstract: Optical lithography scheme making use of light coupling structures, and elastomeric light coupling structures in particular. These light coupling structures comprise protruding portions and connecting portions. The protruding elements are designed to be brought into conformal contact with a resist to be exposed such that the light guided into the protruding elements is coupled from there directly into the resist. The lateral shape and size of the protruding elements defines 1:1 the lateral size and shape of small features to be exposed in the resist.

    Herstellung eines monokristallinen Blatts

    公开(公告)号:DE112011100856T5

    公开(公告)日:2013-01-24

    申请号:DE112011100856

    申请日:2011-05-23

    Applicant: IBM

    Abstract: Ein Verfahren zur Herstellung eines monokristallinen Blatts (11), insbesondere eines Siliciumblatts (11), umfasst das Folgende: Bereitstellen von mindestens zwei Öffnungselementen (1, 2), welche zwischen sich eine Lücke (3) bilden; Bereitstellen einer geschmolzenen Legierung (4), welche Silicium umfasst, in der Lücke (3) zwischen den mindestens zwei Öffnungselementen (1, 2); Bereitstellen eines gasförmigen Vorstufenmediums (5), welches Silicium umfasst, in Nachbarschaft der geschmolzenen Legierung (4); Bereitstellen eines Silicium-Keimkristalls (6) in Nachbarschaft der geschmolzenen Legierung (4) und In-Kontakt-Bringen des Silicium-Keimkristalls (6) mit der geschmolzenen Legierung (4). Eine Einheit (10, 20) zur Herstellung eines monokristallinen Blatts (11), insbesondere eines Siliciumblatts (11), umfasst mindestens zwei Öffnungselemente (1, 2) in einem vorgegebenen Abstand (D) voneinander, wodurch eine Lücke (3) gebildet wird, und welche dafür geeignet sind, erwärmt zu werden, um einest, durch die Oberflächenspannung in der Lücke (3) zwischen den Öffnungselementen (1, 2) zu halten; ein Mittel (15) zum Zuführen eines gasförmigen Vorstufenmediums (5), welches Silicium umfasst, in die Nachbarschaft der geschmolzenen Legierung (4) und ein Positioniermittel (16) zum Halten und Bewegen eines Keimkristalls (6) in Nachbarschaft der geschmolzenen Legierung (2).

    15.
    发明专利
    未知

    公开(公告)号:DE68917310D1

    公开(公告)日:1994-09-08

    申请号:DE68917310

    申请日:1989-12-13

    Applicant: IBM

    Abstract: The Delta-Phi microlens consists of a first foil (3) of a metal or alloy from the group of transition metals and a second foil (4) of a metal or alloy from the group comprising the elements of IA or IIA groups of the periodic system of elements, the second foil (4) being coated onto one surface of said first foil (3). A hole (2) extends through both foils (3, 4) in precise alignment with the axis (6) of a sharply pointed tip (1) made of conductive material and placed at a distance of the order of 1 mu m from that surface of said first foil (3) opposite said second foil (4). With the first foil (3) connected to ground and a potential on the order of -30 V applied at said tip (1), at ultra-high vacuum conditions, a beam of low-energy electrons will have trajectories (5) deviated towards a focal point (7). With a positive potential of more than 30 V applied to said tip (1), and in a noble gas atmosphere, a beam of ions passing through the microlens of the invention will have trajectories (5) deflected towards said focal point (7).

    16.
    发明专利
    未知

    公开(公告)号:DE3887891D1

    公开(公告)日:1994-03-24

    申请号:DE3887891

    申请日:1988-11-01

    Applicant: IBM

    Abstract: This source for charged particles comprises a sharply pointed tip (1) and an aperture (2) in a thin sheet of material. If the point of the tip (1) is made sharp enough, i.e., if it ends in a single atom or a trimer of atoms, the electric field existing between the tip (1) and the aperture (2) will cause a stream of electrons to be emitted from the tip (1), pass the aperture (2) and to continue as a beam (4) of free electroms beyond said aperture (2). The sheet (3) carrying the aperture (2) may, for example, be a carbon foil or a metallic foil, including gold. The distance of the tip (1) from the aperture (2) is in the submicron range, and so is the diameter of said aperture (2). The distance is being held essentially constant by means of a feedback loop system. The divergence of the beam (4) is

    Producing a mono-crystalline sheet
    17.
    发明专利

    公开(公告)号:GB2494565A

    公开(公告)日:2013-03-13

    申请号:GB201221842

    申请日:2011-05-23

    Applicant: IBM

    Abstract: A method for producing a mono-crystalline sheet (11), in particular a silicon sheet (11), comprises: providing at least two aperture elements (1, 2) forming a gap (3) in-between; providing a molten alloy (4) comprising silicon in the gap (3) between said at least two aperture elements (1, 2); providing a gaseous precursor medium (5) comprising silicon in the vicinity of the molten alloy (4); providing a silicon nucleation crystal (6) in the vicinity of the molten alloy (4); and bringing in contact said silicon nucleation crystal (6) and the molten alloy (4). A device (10, 20) for producing a mono-crystalline sheet (11), in particular a silicon sheet (11), comprises at least two aperture elements (1, 2) at a predetermined distance (D) from each other thereby forming a gap (3), and being adapted to be heated for holding a molten alloy (4) comprising silicon by surface tension in the gap (3) between the aperture elements (1,2 ); a means (15) for supplying a gaseous precursor medium (5) comprising silicon in the vicinity of the molten alloy (4); and a positioning means (16) for holding and moving a nucleation crystal (6) in the vicinity of the molten alloy (2).

    18.
    发明专利
    未知

    公开(公告)号:DE68917310T2

    公开(公告)日:1995-03-09

    申请号:DE68917310

    申请日:1989-12-13

    Applicant: IBM

    Abstract: The Delta-Phi microlens consists of a first foil (3) of a metal or alloy from the group of transition metals and a second foil (4) of a metal or alloy from the group comprising the elements of IA or IIA groups of the periodic system of elements, the second foil (4) being coated onto one surface of said first foil (3). A hole (2) extends through both foils (3, 4) in precise alignment with the axis (6) of a sharply pointed tip (1) made of conductive material and placed at a distance of the order of 1 mu m from that surface of said first foil (3) opposite said second foil (4). With the first foil (3) connected to ground and a potential on the order of -30 V applied at said tip (1), at ultra-high vacuum conditions, a beam of low-energy electrons will have trajectories (5) deviated towards a focal point (7). With a positive potential of more than 30 V applied to said tip (1), and in a noble gas atmosphere, a beam of ions passing through the microlens of the invention will have trajectories (5) deflected towards said focal point (7).

    LOW-VOLTAGE SOURCE FOR NARROW ELECTRON/ION BEAMS

    公开(公告)号:CA1311863C

    公开(公告)日:1992-12-22

    申请号:CA607014

    申请日:1989-07-28

    Applicant: IBM

    Abstract: This source for charged particles, comprises a sharply pointed tip (1) and an aperture (2) in a thin sheet of material. If the point of tip (1) is made sharp enough, i.e., if it ends in a single atom or a triter of atoms, the electric field existing between the tip (1) and the aperture (2) will cause a stream of electrons to be emitted from the tip (1), pass the aperture (2) and to continue as a beam (4) of free electrons beyond said aperture (2). The sheet (3) carrying the aperture (2) may, for example, be a carbon foil or a metallic foil, including gold. The distance of the tip (1) from the aperture (2) is in the submicron range, and so is the diameter of said aperture (2). The distance is being held essentially constant by means of a feedback loop system. The divergence of the beam (4) is

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