Abstract:
Contact structures exhibiting resilience or compliance for a variety of electronic components are formed by bonding a free end of a wire (502) to a substrate (508), configuring the wire (530) into a wire stem (530) having a springable shape, severing the wire stem (530), and overcoating the wire stem (530) with at least one layer of a material (522). In an exemplary embodiment, a free end of a wire stem (530) is bonded to a contact area on a substrate (508), the wire stem (530) is configured to have a springable shape, the wire stem (530) is severed to be free-standing by an electrical discharge, and the free-standing wire stem is overcoated by plating. A variety of materials for the wire stem (530) (which serves as a falsework) and for the overcoat (540) (which serves as a superstructure over the falsework) are disclosed. The resilient contact structures described herein are ideal for making a "temporary" (probe) connections to an electronic component such as a semiconductor die, for burn-in and functional testing.
Abstract:
Resilient contact structures extend from a top surface of a support substrate and solder-ball (or other suitable) contact structures are disposed on a bottom surface of the support substrate. Interconnection elements (110) are used as the resilient contact structures and are disposed atop the support substrate. Selected ones of the resilient contact structures atop the support substrate are connected, via the support substrate, to corresponding ones of the contact structures on the bottom surface of the support substrate. In an embodiment intended to receive an LGA-type semiconductor package (304), pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally normal to the top surface of the support substrate (302). In an embodiment intended to receive a BGA-type semiconductor package (404), pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally parallel to the top surface of the support substrate (402).
Abstract:
A plurality of free-standing spring elements (512) are mounted to a surface (510a) of a carrier substrate (510). The carrier substrate (510) is mounted to a surface (502a) of a semiconductor device (502). Bond pads (504) of the semiconductor device are connected to the spring elements (512) by bond wires (520) extending between the bond pads (504) and terminals (516) associated with the spring elements. Alternatively, the carrier is flip-chip reflow soldered to the semiconductor device. The carrier substrate (510) is suitably mounted to one or more semiconductor devices (532, 534) prior to the semiconductor devices being singulated from a semiconductor wafer upon which they are formed. Resilience and compliance to effect pressure connections to the semiconductor device (502) are provided by the spring elements (512) extending from the carrier substrate (510), per se. Hence, the carrier substrate (510) suitably remains rigid with respect to the semiconductor device (502). The carrier substrate (510) is advantageously pre-fabricated, by mounting the spring elements (512) thereto prior to mounting the carrier substrate to the semiconductor device(s).
Abstract:
Spring elements (540) for use as electrical contacts are fabricated by shaping a relatively soft core (112, 122) and overcoating the shaped core (702) with a relatively hard material (114, 124). Additional overcoat layers may be applied to enhance the electrical characteristics of the resulting spring element (540). The spring elements (540) are fabricated from an elongate element (602) which is shaped to exhibit a plurality of spring element cores linked end-to-end, which are then overcoated. The resulting spring elements (540) may then be attached to electronic components (708) by automated machinery (620). An external shaping tool is disclosed, which is particularly useful for shaping a plurality of linked and separable spring elements (540) which are inherently springy (i.e., formed of a relatively hard material).
Abstract:
Interconnection elements for electronic components, exhibiting desirable mechanical characteristics (such as resiliency) for making pressure contacts are formed by using a shaping tool (512) to shape an elongate core element (502) of a soft material (such as gold or soft copper wire) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped core element with a hard material (such as nickel and its alloys), to impart a desired spring (resilient) characteristic to the resulting composite interconnection element. The shaping tool may also be an anvil (622) and a die (624), and may nick or sever successive shaped portions of the elongate element, and the elongate element may be made of an inherently hard (springy) material.
Abstract:
Interconnection elements (550) for electronic components (556), exhibiting desirable mechanical characteristics (such as resiliency), for making pressure contact(s) are formed by shaping a ribbon-like core element (552) of a soft material (such as gold or soft copper) to have a springable shape (including cantilever beam, S-shape, U-shape), and overcoating the shaped core element with a hard material (558) such as nickel and it alloys, to impart a desired spring (resilient) characteristic to the resulting composite interconnection element (550). A final overcoat of a material (220) having superior electrical qualities (e.g., electrical conductivity and/or solderability) may be applied to the composite interconnection element (200). The resulting interconnection elements (500, 550) may be mounted to a variety of electronic components.
Abstract:
The efficacy of electrical discharges for severing bond wires (102, 202) and/or for forming balls (234, 236) at the ends of bond wires (including bond wires (202) already severed by alternative mechanisms) is improved by performing the electrical discharges in the presence of ultraviolet light (130). A "spark gap" is formed between an EFO electrode (118, 232) and the wire (102, 202), one of which serves as the cathode of the spark gap. Preferably, the ultraviolet light (130) is directed at the element serving as the cathode of the spark gap. Providing photoemission at the cathode element of the spark gap stabilizes arc/plasma formation and produces more reliable and predictable results. This technique may be used in conjunction with negative EFO systems or with positive EFO systems, and may benefit from either direct or field-assisted photoemission.
Abstract:
Resilient contact structures (430) are mounted directly to bond pads (410) on semiconductor dies (402a, 402b), prior to the dies (402a, 402b) being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies (402a, 402b) to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies (702, 704) with a circuit board (710) or the like having a plurality of terminals (712) disposed on a surface thereof. Subsequently, the semiconductor dies (402a, 402b) may be singulated from the semiconductor wafer, whereupon the same resilient contact structures (430) can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements (430) of the present invention as the resilient contact structures, burn-in (792) can be performed at temperatures of at least 150 DEG C, and can be completed in less than 60 minutes.