公开(公告)号：JP2001028334A

公开(公告)日：2001-01-30

申请号：JP2000172901

申请日：2000-06-09

Applicant: IBM

Inventor： RAUURU EDMUND ACOSTA ,  ANGELOPOULOS MARIE ,  STEPHEN ALLEN CORDES

IPC: G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a film and hard spacer type pellicle structure, where the area of X-ray mask is increased, the film and fitting material of an X-ray mask is enlarged in range, and precision in manufacture is improved. SOLUTION: An oxide layer is patterned on bulk spacer materials 12 and 13, having a thickness equal to the gap between an X-ray mask 1 and the oxide which is to be patterned. The oxide on the bulk spacer materials 12 and 13 prevents conversion of a part of wafer that functions as a spacer to the etching characteristics which differ from the bulk spacer materials 12 and 13 via the exposed surface of the wafer of bulk spacer materials 12 and 13. The wafer of exposed bulk spacer materials 12 and 13 functions as a spacer and is converted into a depth which protects the edge part. Then the oxide is removed. A film is made to adhere to the entire surface of the bulk spacer materials 12 and 13. The bulk wafer is removed as far as the converted part by utilizing the different etching characteristics which is provided.

公开(公告)号：WO9821755A3

公开(公告)日：1998-10-08

申请号：PCT/US9720862

申请日：1997-11-10

Applicant: IBM ,  ANGELOPOULOS MARIE ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  FURMAN BRUCE KENNETH ,  GRAHAM TERESITA ORDONEZ ,  LIEN SHUI CHIH ALAN

Inventor： ANGELOPOULOS MARIE ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  FURMAN BRUCE KENNETH ,  GRAHAM TERESITA ORDONEZ ,  LIEN SHUI-CHIH ALAN

IPC: H01L21/3205 ,  G02F1/1343 ,  G02F1/1345 ,  H01L21/28 ,  H01L21/288 ,  H01L21/58 ,  H01L23/52 ,  H01L27/148 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H05B33/26 ,  H01L29/47

CPC classification number: H01L51/0504 ,  G02F1/13439 ,  H01L29/458 ,  H01L29/4908 ,  H01L51/5203

Abstract: Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.

Abstract translation: 描述了具有提供电连接的图案化导电聚合物的电子器件及其制造方法。 描述了液晶显示单元，其中至少一个电极提供跨越由图案化的导电聚合物形成的液晶材料的偏压。 描述了具有图案化导电聚合物作为源极漏极和栅电极的薄膜晶体管。 描述了由图案化的导电聚合物形成的具有阳极和涂覆区域的发光二极管。 使用抗蚀剂掩模的图案化方法; 使用图案化金属层进行图案化; 使用抗蚀剂图案化金属层; 并且直接对导电聚合物进行图案化以形成电极，并描述阳极和阴极区域。

公开(公告)号：WO2005040918A3

公开(公告)日：2005-12-15

申请号：PCT/US2004035253

申请日：2004-10-22

Applicant: IBM ,  HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

IPC: G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075

CPC classification number: G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.

Abstract translation: 提供了本发明的倍半硅氧烷聚合物，并且提供了包含这种倍半硅氧烷聚合物的抗蚀剂组合物，其中所述倍半硅氧烷聚合物的至少一部分含有氟化部分，并且所述倍半硅氧烷聚合物的至少一部分含有悬挂溶解度抑制酸不稳定部分， 用于酸催化裂解的活化能以及高光密度部分的存在被最小化或避免。 本发明的聚合物还含有促进抗蚀剂在碱性水溶液中的碱溶性的侧链极性部分。 本发明的聚合物在正型抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长产生高分辨率图像。

公开(公告)号：WO2004053594A3

公开(公告)日：2005-11-24

申请号：PCT/US0239048

申请日：2002-12-05

Applicant: IBM ,  HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID R ,  PETRILLO KAREN E ,  LANG ROTBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.

Abstract translation: 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。

公开(公告)号：JP2005148752A

公开(公告)日：2005-06-09

申请号：JP2004332288

申请日：2004-11-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  ALLEN ROBERT D ,  ANGELOPOULOS MARIE ,  KWONG RANEE W ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/039 ,  C08G77/22 ,  G03C1/492 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/094 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0757

Abstract: PROBLEM TO BE SOLVED: To provide silsesquioxane polymers and photoresist compositions that contain such silsesquioxane polymers.
SOLUTION: At least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silsesquioxane polymer contains pendant solubility inhibiting cyclic ketal acid-labile moieties that have low activation energy for acid-catalyzed cleaving. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive photoresist compositions. The invention encompasses methods of using such photoresist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g., bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供含有这种倍半硅氧烷聚合物的倍半硅氧烷聚合物和光致抗蚀剂组合物。 解决方案：至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分倍半硅氧烷聚合物含有对酸催化裂解具有低活化能的侧链溶解性抑制性环状缩酮酸不稳定部分。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物特别可用于正性光致抗蚀剂组合物。 本发明包括使用这种光致抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如，双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001242630A

公开(公告)日：2001-09-07

申请号：JP2001002614

申请日：2001-01-10

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  CATHERINA BABICHI ,  ALFRED GRILL ,  SCOTT DAVID HALLE ,  AAPAN PURAVIN MAHOROWARA ,  VISHUNUBUHAI VITTARUBUAI PATEL

IPC: G03F7/11 ,  C23C16/30 ,  C23C16/32 ,  G02B1/10 ,  G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic structure with plural layers including an RCHX layer containing a material of the formula R:C:H:X (where R is one selected from the group comprising Si, Ge, B, Sn, Fe, Ti and a mixture of these and X is absent or one selected from the group comprising O, N, S and F) as at least one layer and with a layer of an energy active material, a method for producing the structure and a method for utilizing the structure. SOLUTION: The RCHX layer is formed by vapor deposition, the energy active material is patterned to form a pattern and this pattern is transferred to the RCHX layer. The RCHX layer is useful as a hard mask layer, an antireflection layer and a hard mask/antireflection layer.

公开(公告)号：JPH11203937A

公开(公告)日：1999-07-30

申请号：JP28506998

申请日：1998-10-07

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  JAMES JOSEPH BUCCHINYAANO ,  KAREN E PETORIIRYO

IPC: G03C1/89 ,  G03F7/004 ,  G03F7/038 ,  H01B1/12 ,  H05K1/09

Abstract: PROBLEM TO BE SOLVED: To provide a conductive polymer composition having a controlled pH, a structural body containing it and its manufacturing method. SOLUTION: This structural body has a surface and multiple layers on the surface; at least one of the multiple layers is formed from an energy sensitive material, at least one of other layers is formed from a conductive polymer, and this conductive polymer contains an acid functional group and has a predetermined pH. The pH is controlled by an additive agent mixed into the conductive polymer or a constituent of the conductive polymer. The conductive polymer is preferably the top layer. The structural body can avoid the influence of charge due to electron beams on a resist in fabricating microelectronics and is useful for lithography. This composition is also useful for application examples such as static discharge, electromagnetic interference shielding, corrosion prevention, electroplating and wiring.

公开(公告)号：JPH1112373A

公开(公告)日：1999-01-19

申请号：JP11387498

申请日：1998-04-23

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  KWANG-YUNG R CHEN ,  ROBERT KENNETH RIIDI ,  WAYNE MARTIN MORROW

IPC: C08J7/00 ,  C08J7/14 ,  H01L21/027 ,  H05F1/00 ,  H05F1/02

Abstract: PROBLEM TO BE SOLVED: To provide an electric charge-vanishing polymer film and a method for bringing the film to be electric charge-vanishing in the situation. SOLUTION: This electric charge-vanishing film can be used as resists for nondestructive SEM measurements, electron beam lithographies and ESD- protecting coatings for electronic parts/products. The method for bringing the polymer film to be electric charge-vanishing consists of a process for laying a polymer having ionic functional groups on the surface and a process for treating the surface with a first chemical substance to bring the ionic functional groups to an ionized state. The surface can be brought back to a nonionized state by exposing the ionized surface to charged beams or electrostatic charges, then exposing the ionized surface to a second chemical substance.

公开(公告)号：JP2007219545A

公开(公告)日：2007-08-30

申请号：JP2007116438

申请日：2007-04-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  LI WENJIE ,  MOREAU WAYNE ,  MEDEIROS DAVID E ,  PETRILLO KAREN E ,  LANG ROBERT N ,  ANGELOPOULOS MARIE

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist composition comprising an acid-sensitive imaging polymer and a radiation-sensitive acid generator component.
SOLUTION: The resist composition contains (i) a first radiation-sensitive acid generator selected from the group consisting of dissolution inhibiting acid generators and (ii) a second radiation-sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group protected acidic group-functionalized radiation-sensitive acid generators, and enables formation of a highly sensitive resist suitable for use in EPL or EUV, soft X-ray and another low energy intensity lithographic imaging applications. The resist composition is useful in other lithography processes as well.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供包含酸敏感成像聚合物和辐射敏感酸产生剂组分的抗蚀剂组合物。 抗蚀剂组合物包含（i）选自溶解抑制酸发生剂的第一辐射敏感性酸产生剂和（ii）选自下组的第二辐射敏感性酸产生剂：未保护的酸性基团 - 官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂，并且能够形成适用于EPL或EUV，软X射线和另一种低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也用于其它光刻工艺。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2001092135A

公开(公告)日：2001-04-06

申请号：JP2000239755

申请日：2000-08-08

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  EDWARD D BABICHI ,  INNA V BABICHI ,  CATHERINE E BABICHI ,  JAMES J BACHINAANO ,  PETRILLO KAREN E ,  STEPHEN A RISHUTON

IPC: G03F7/033 ,  C08F20/26 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a chemically unamplified new negative type gradiation photoresist having high resolution and high sensitivity and developable in water or in an aqueous solution. SOLUTION: Based on the rearrangement of a carbon-oxygen bond in pendant ester group of the polymer, the (photo)resist crosslinks polymer chains and does not require the addition of a supplemental photocatalyst, a photoinitiator or a crosslinking agent.