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    RADIATION-SENSITIVE RESIN COMPOSITION
    11.
    发明专利
    RADIATION-SENSITIVE RESIN COMPOSITION 审中-公开

    公开(公告)号：JP2004012545A

    公开(公告)日：2004-01-15

    申请号：JP2002162080

    申请日：2002-06-03

    Applicant: JSR CORP ,  JSR MICRO INC ,  IBM

    Inventor： YAMAMOTO MASASHI ,  ISHII HIROYUKI ,  ISHIDA EIKO ,  NISHIMURA YUKIO ,  MARK SLEZAK ,  BRUNSVOLD WILLIAM R ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO

    IPC: G03F7/039 ,  C08F20/28 ,  G03F7/004 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution and pattern shape, and useful particularly as a chemically amplified resist excellent in focus latitude. SOLUTION: The radiation-sensitive resin composition comprises (A) a mixture of alkali-insoluble or slightly alkali-soluble resins having separate repeating units protected with acid-dissociating protective groups and typified by repeating units derived from 2-methyl-2-adamantyl (meth)acrylate, 1-ethylcyclohexyl (meth)acrylate, etc., wherein the acid-dissociating protective group of at least one of the resins is different from that of the other, and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO

    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS
    12.
    发明申请
    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 审中-公开
    可开发的底部抗反射涂层组合物

    公开(公告)号：WO2013023124A3

    公开(公告)日：2013-07-11

    申请号：PCT/US2012050267

    申请日：2012-08-10

    Applicant: IBM ,  CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

    Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

    IPC: G03F7/004 ,  C09D133/04 ,  G03F7/039 ,  G03F7/09

    CPC classification number: G03F7/0382 ,  C09J133/14 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

    Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

    Abstract translation: 负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。 在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。

    SI-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION
    13.
    发明申请
    SI-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION 审中-公开
    用于纳米图案装置制造的含SI聚合物

    公开(公告)号：WO2008055137A3

    公开(公告)日：2008-08-14

    申请号：PCT/US2007082967

    申请日：2007-10-30

    Applicant: IBM ,  CHEN KUANG-JUNG ,  HUANG WU-SONG ,  LI WAI-KIN ,  LIN YI-HSIUNG S

    Inventor： CHEN KUANG-JUNG ,  HUANG WU-SONG ,  LI WAI-KIN ,  LIN YI-HSIUNG S

    IPC: C08G18/66

    CPC classification number: G03F7/0758 ,  G03F7/0045

    Abstract: A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.

    Abstract translation: 提供了一种抗蚀剂聚合物（22），其具有位于其中的基本上垂直于其主表面取向的纳米级图案的亚光刻开口（26）。 具有纳米级图案的这种抗蚀剂聚合物被用作将纳米级图案转移到下面的基底例如介电材料（12）的蚀刻掩模。 在将纳米级图案转移到衬底中之后，在衬底中产生宽度小于50nm的纳米级开口。 介电材料中纳米级空隙的存在降低了原始介电材料的介电常数k。 根据本发明的一个方面，本发明的抗蚀剂聚合物包含共聚物，该共聚物包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B），其中所述 两个单体单元（A和B）具有不同的蚀刻速率。

    Developable bottom antireflective coating composition and pattern forming method using thereof
    15.
    发明专利
    Developable bottom antireflective coating composition and pattern forming method using thereof 未知

    公开(公告)号：GB2517324B

    公开(公告)日：2015-06-03

    申请号：GB201419648

    申请日：2013-06-27

    Applicant: IBM

    Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

    IPC: G02B1/11 ,  B32B7/02 ,  C09D133/00 ,  G03F7/004

    Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF
    18.
    发明专利
    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 未知

    公开(公告)号：SG11201404867YA

    公开(公告)日：2014-09-26

    申请号：SG11201404867Y

    申请日：2013-06-27

    Applicant: IBM

    Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

    IPC: G02B1/11 ,  B32B7/02 ,  G03F7/004

    Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

    Fotoresist-Zusammensetzung für Negativentwicklung und Strukturierungsverfahren damit
    19.
    发明专利
    Fotoresist-Zusammensetzung für Negativentwicklung und Strukturierungsverfahren damit 未知

    公开(公告)号：DE112011103052T5

    公开(公告)日：2013-07-04

    申请号：DE112011103052

    申请日：2011-10-21

    Applicant: IBM

    Inventor： LI WAI-KIN ,  CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/32

    Abstract: Die vorliegende Erfindung betrifft eine Fotoresist-Zusammensetzung, die für die Negativentwicklung geeignet ist, und ein diese Fotoresist-Zusammensetzung verwendendes Strukturierungsverfahren. Die Fotoresist-Zusammensetzung weist ein Abbildungspolymer und einen strahlungsempfindlichen Säuregenerator auf. Das Abbildungspolymer weist eine erste Monomereinheit mit einer anhängenden säurelabilen Gruppe und eine zweite Monomereinheit auf, die eine reaktive Ethergruppe, eine Isocyanidgruppe oder eine Isocyanatgruppe enthält. Das Strukturierungsverfahren verwendet ein organisches Lösungsmittel als Entwickler, um unbelichtete Regionen einer Fotoresistschicht aus der Fotoresist-Zusammensetzung selektiv zu entfernen und in der Fotoresistschicht eine strukturierte Struktur zu bilden. Die Fotoresist-Zusammensetzung und das Strukturierungsverfahren sind besonders nützlich, um mithilfe der 193-nm-(ArF)-Lithografie auf einem Halbleitersubstrat Materialstrukturen zu bilden.

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