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公开(公告)号：EP1851589A4
公开(公告)日：2009-08-19
申请号：EP06735757
申请日：2006-02-22
Applicant: IBM
Inventor： ALLEN ROBERT DAVID , BROCK PHILLIP JOE , GIL DARIO , HINSBERG WILLIAM DINAN , LARSON CARL ERIC , SUNDBERG LINDA KARIN , WALLRAFF GREGORY MICHAEL
IPC: G03C1/00
CPC classification number: G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 A/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: (I) wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is 10 preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
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2.发明申请LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS 审中-公开低激活能量溶解剂用于光电子学应用的改性剂
公开(公告)号：WO2007039346A2
公开(公告)日：2007-04-12
申请号：PCT/EP2006065528
申请日：2006-08-21
Applicant: IBM , IBM UK , ALLEN ROBERT DAVID , DIPIETRO RICHARD ANTHONY , TRUONG HOA , BROCK PHILLIP JOE , SOORIYAKUMARAN RATNAM
Inventor： ALLEN ROBERT DAVID , DIPIETRO RICHARD ANTHONY , TRUONG HOA , BROCK PHILLIP JOE , SOORIYAKUMARAN RATNAM
CPC classification number: G03F7/0045 , C07J9/005 , C07J17/00 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
Abstract: A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
Abstract translation: 包括聚合物，光致酸产生剂和溶解改性剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图像的方法和溶解改性剂组合物。 溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂， 允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。
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公开(公告)号：WO2006091648A2
公开(公告)日：2006-08-31
申请号：PCT/US2006006225
申请日：2006-02-22
Applicant: IBM , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , GIL DARIO , HINSBERG WILLIAM DINAN , LARSON CARL ERIC , SUNDBERG LINDA KARIN , WALLRAFF GREGORY MICHAEL
Inventor： ALLEN ROBERT DAVID , BROCK PHILLIP JOE , GIL DARIO , HINSBERG WILLIAM DINAN , LARSON CARL ERIC , SUNDBERG LINDA KARIN , WALLRAFF GREGORY MICHAEL
IPC: G03C1/76
CPC classification number: G03F7/11 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
Abstract: A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 A/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: (I) wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is 10 preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
Abstract translation: 公开了一种用于施加在光致抗蚀剂材料上的面漆材料。 面漆材料包含至少一种溶剂和在含水碱性显影剂中具有至少3000A /秒的溶解速率的聚合物。 聚合物含有包含以下两种结构之一的六氟醇单体单元：（I）其中n是整数。 面漆材料可以用于光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 面漆材料10优选不溶于水，因此特别适用于使用水作为成像介质的浸没式光刻技术。
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4.发明专利
公开(公告)号：DE112010003502T5
公开(公告)日：2013-03-14
申请号：DE112010003502
申请日：2010-08-23
Applicant: IBM
Inventor： NELSON ALSHAKIM , BROCK PHILLIP JOE , SOORIYAKUMARAN RATMAN , DAVIS BLAKE , MILLER ROBERT DENNIS , ALLEN ROBERT DAVID , LIN QINGHUANG
IPC: H01L21/32 , C09D183/04 , C09D183/14 , H01L21/312
Abstract: Silsesquioxan-Polymere, Silsesquioxan-Polymere in negativ photostrukturierbaren dielektrischen Formulierungen, Verfahren zur Bildung von Strukturen unter Verwendung von negativ photostrukturierbaren dielektrischen Formulierungen, welche Silsesquioxan-Polymere enthalten, und Strukturen, die aus Silsesquioxan-Polymeren hergestellt wurden.
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公开(公告)号：DE112010003408T5
公开(公告)日：2012-08-30
申请号：DE112010003408
申请日：2010-08-03
Applicant: IBM
Inventor： DIPIETRO RICHARD ANTHONY , BROCK PHILLIP JOE , TRUONG HOA , ALLEN ROBERT DAVID
IPC: G03F7/039
Abstract: Fotolack-Zusammensetzungen umfassen ein Gemisch eines Phenolpolymers mit einem Copolymer auf (Meth)acrylatbasis, das frei ist von Ether-enthaltenden und/oder Carbonsäure-enthaltenden Einheiten. Das (Meth)acrylat-Copolymer umfasst ein erstes Monomer, ausgewählt aus der Gruppe bestehend aus einem Alkylacrylat, einem substituierten Alkylacrylat, einem Alkyl(meth)acrylat, einem substituierten Alkylmethacrylat und Gemischen davon, und ein zweites Monomer, ausgewählt aus der Gruppe bestehend aus einem Acrylat, einem (Meth)acrylat oder einem Gemisch davon mit einem säurespaltbaren Estersubstituenten; und einen Fotosäuregenerator. Es werden auch Verfahren zum Herstellen eines Fotolack-Bilds auf einem Substrat mit der Fotolack-Zusammensetzung offenbart.
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Patent Agency Ranking
公开(公告)号：GB2487129B
公开(公告)日：2016-02-17
申请号：GB201200145
申请日：2010-09-14
Applicant: IBM
Inventor： SOORIYAKUMARAN RATNAM , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , SWANSON SALLY ANN , FRIZ ALEXANDER , HUANG WU-SONG , CHEN KUANG-JUNG , TRUONG HOA
IPC: C09D143/04 , G03F7/00 , G03F7/075
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公开(公告)号：GB2485283B
公开(公告)日：2014-11-26
申请号：GB201119451
申请日：2010-08-23
Applicant: IBM
Inventor： NELSON ALSHAKIM , BROCK PHILLIP JOE , SOORIYAKUMARAN RATNAM , DAVIS BLAKE , MILLER ROBERT DENNIS , ALLEN ROBERT DAVID , LIN QINGHUANG
IPC: C09D183/04 , C08G77/04 , C08L83/04 , C09D183/14 , H01L21/312
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公开(公告)号：GB2487129A
公开(公告)日：2012-07-11
申请号：GB201200145
申请日：2010-09-14
Applicant: IBM
Inventor： SOORIYAKUMARAN RATNAM , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , SWANSON SALLY ANN , FRIZ ALEXANDER , HUANG WU-SONG , CHEN KUANG-JUNG , TRUONG HOA
IPC: C09D143/04 , G03F7/00 , G03F7/075
Abstract: Coating compositions include a polymer including (I) wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
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公开(公告)号：DE602006012076D1
公开(公告)日：2010-03-18
申请号：DE602006012076
申请日：2006-08-21
Applicant: IBM
Inventor： ALLEN ROBERT DAVID , DIPIETRO RICHARD ANTHONY , TRUONG HOA , BROCK PHILLIP JOE , SOORIYAKUMARAN RATNAM
Abstract: A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
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公开(公告)号：GB2485283A
公开(公告)日：2012-05-09
申请号：GB201119451
申请日：2010-08-23
Applicant: IBM
Inventor： NELSON ALSHAKIM , BROCK PHILLIP JOE , SOORIYAKUMARAN RATNAM , DAVIS BLAKE , MILLER ROBERT DENNIS , ALLEN ROBERT DAVID , LIN QINGHUANG
IPC: C09D183/04 , C08G77/04 , C08L83/04 , C09D183/14 , H01L21/312
Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
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