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    11.
    发明专利
    未知

    公开(公告)号：DE69332917D1

    公开(公告)日：2003-05-28

    申请号：DE69332917

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  C23C14/04

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd
    12.
    发明专利
    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd 未知

    公开(公告)号：SG70044A1

    公开(公告)日：2000-01-25

    申请号：SG1997004071

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd
    13.
    发明专利
    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd 未知

    公开(公告)号：SG70043A1

    公开(公告)日：2000-01-25

    申请号：SG1997004069

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  HSU LOUIS L ,  DALAL HORMAZDYAR M

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    14.
    发明专利
    未知

    公开(公告)号：DE68925459D1

    公开(公告)日：1996-02-29

    申请号：DE68925459

    申请日：1989-10-19

    Applicant: IBM

    Inventor： BREZOCZKY BLASIUS ,  CUOMO JEROME J ,  GUARNIERI C RICHARD ,  RAMANATHAN KUMBAKONAM V

    IPC: C23C14/06 ,  C23C14/08 ,  C23C14/58 ,  G11B5/84 ,  G11B5/85 ,  C23C14/22 ,  C23C16/30 ,  C23C16/56

    Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrOx film forming layer. The process is carried out at approximately room temperature. The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown fillm to about 500 DEG C. The rapid thermal anneal step preferably comprises a series of at least five separate pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.

    18.
    发明专利
    未知

    公开(公告)号：FR2339958A1

    公开(公告)日：1977-08-26

    申请号：FR7639685

    申请日：1976-12-22

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  STEFANO THOMAS H DI ,  ROSENBERG ROBERT

    IPC: H01L31/04 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/07 ,  H01L31/06 ,  H01L31/18

    Abstract: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd
    19.
    发明专利
    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd 未知

    公开(公告)号：SG70046A1

    公开(公告)日：2000-01-25

    申请号：SG1997004075

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

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