公开(公告)号：AU2003298347A1

公开(公告)日：2004-06-30

申请号：AU2003298347

申请日：2003-12-08

Applicant: IBM

Inventor： CLEVENGER LARRY ,  DALTON TIMOTHY ,  HOINKIS MARK ,  KALDOR STEFFEN ,  KUMAR KAUSHIK ,  TULIPE DOUGLAS JR LA ,  SEO SOON-CHEON ,  SIMON ANDREW ,  WANG YUN-YU ,  YANG CHIH-CHAO ,  YANG HAINING

IPC: H01L21/768

Abstract: Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a capping layer and a dielectric layer. The dielectric layer is patterned so as to expose the capping layer. The capping layer is then sputter etched to remove the capping layer and expose the metal conductor. In the process of sputter etching, the capping layer is redeposited onto the sidewall of the pattern. Lastly, at least one layer is deposited into the pattern and covers the redeposited capping layer.