公开(公告)号：DE10331195B4

公开(公告)日：2006-12-28

申请号：DE10331195

申请日：2003-07-10

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： DOBUZINSKY DAVID M ,  FALTERMEIER JOHNATHAN ,  FLAITZ PHILIP ,  IWATAKE MICHAEL M ,  MALDEI MICHAEL ,  NINOMIYA LISA Y ,  RAMACHARDRAN RAVIKUMAR ,  SARDESAI VIRAI Y ,  SNAVELY COLLEEN M ,  WANG YUN YU

IPC: H01L21/8242 ,  H01L21/20 ,  H01L21/285 ,  H01L21/306

Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.

公开(公告)号：DE68919346D1

公开(公告)日：1994-12-15

申请号：DE68919346

申请日：1989-12-16

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：HK90595A

公开(公告)日：1995-06-16

申请号：HK90595

申请日：1995-06-08

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：DE68919346T2

公开(公告)日：1995-05-24

申请号：DE68919346

申请日：1989-12-16

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：DE69632768D1

公开(公告)日：2004-07-29

申请号：DE69632768

申请日：1996-09-04

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： HO HERBERT ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  PALM J HERBERT ,  FUGARDI STEPHEN ,  AJMERA ATUL ,  MOSEMAN JAMES E ,  RAMAC SAMUEL C

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762 ,  H01L21/763 ,  H01L21/334

Abstract: Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C to 1100 DEG C for 60 seconds.

公开(公告)号：DE10331195A1

公开(公告)日：2004-02-12

申请号：DE10331195

申请日：2003-07-10

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： DOBUZINSKY DAVID M ,  FALTERMEIER JOHNATHAN ,  FLAITZ PHILIP ,  IWATAKE MICHAEL M ,  MALDEI MICHAEL ,  NINOMIYA LISA Y ,  RAMACHARDRAN RAVIKUMAR ,  SARDESAI VIRAI Y ,  SNAVELY COLLEEN M ,  WANG YUN YU

IPC: H01L21/20 ,  H01L21/285 ,  H01L21/306 ,  H01L21/8242

Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where in amorphous Si is used to fill the CB contact, the improvement of enhancing epitaxial regrowth in amorphous Poly CB contacts, comprising: a) affecting a CB liner reactive ion etch on a substrate to remove SiN and SiO; b) affecting an O plasma clean (in-situ or ex-situ); c) affecting a Huang AB clean; d) affecting a dilute hydrofluoric acid (DHF) clean; e) depositing amorphous Si; and f) annealing to recrystallize and regrow amorphous CB.

公开(公告)号：DE69632768T2

公开(公告)日：2005-07-07

申请号：DE69632768

申请日：1996-09-04

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： HO HERBERT ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  PALM J HERBERT ,  FUGARDI STEPHEN ,  AJMERA ATUL ,  MOSEMAN JAMES E ,  RAMAC SAMUEL C

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762 ,  H01L21/763 ,  H01L21/334

Abstract: Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C to 1100 DEG C for 60 seconds.

公开(公告)号：CA1334911C

公开(公告)日：1995-03-28

申请号：CA609377

申请日：1989-08-24

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.

公开(公告)号：PH27127A

公开(公告)日：1993-03-16

申请号：PH39885

申请日：1990-01-12

Applicant: IBM

Inventor： DOBUZINSKY DAVID M ,  HORAK DAVID V ,  HOLMES STEVEN J

IPC: C08G77/06 ,  C08G77/48 ,  C08G77/60 ,  C09D183/00 ,  C09D183/16 ,  C23C14/14 ,  C23C14/24 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027 ,  H01L21/30 ,  H01L21/312

Abstract: Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.