公开(公告)号：DE10110566A1

公开(公告)日：2001-09-27

申请号：DE10110566

申请日：2001-03-06

Applicant: IBM

Inventor： ELLIS-MONAGHAN JOHN J ,  FEENEY PAUL M ,  GEFFKEN ROBERT M ,  LANDIS HOWARD S ,  PREVITI-KELLY ROSEMARY A ,  BERGMAN-REUTER BETTE L ,  RUTTEN MATTHEW J ,  STAMPER ANTHONY K ,  YANKEE SALLY J

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/532 ,  H01L23/50 ,  H01L21/314

Abstract: Over the coupling metallising is deposited at least one film of deformable dielectric material. A support structure, contg. rigid dielectric, is connected to the deformable dielectric and to an input-output bond island.The support structure also supports the bond island to prevent the fracture of the deformable dielectric material. Typically the support structure contains a cap over the deformable dielectric material, coplanar with the structured last metallising layer. Independent claims are included for integrated circuit chip and for mfr. of semiconductor chip.

公开(公告)号：CA2514454A1

公开(公告)日：2004-08-19

申请号：CA2514454

申请日：2004-01-23

Applicant: IBM

Inventor： SIMON ANDREW H ,  GEFFKEN ROBERT M ,  MARINO JEFFREY R ,  COONEY EDWARD C III ,  STAMPER ANTHONY K

IPC: H01L21/768

Abstract: A semiconductor device which includes an improved liner structure formed in a via having extended sidewall portions and a bottom penetrating a metal line. The liner structure includes two liner layers, the first being on the via sidewalls, but not the bottom, and the second being on the first layer and the extended sidewall portions and bottom of the via. A method of making the liner structure, in which the first layer is deposited prior to an etching or cleaning step, which extends the via into the metal line, is also disclosed.

公开(公告)号：SG70654A1

公开(公告)日：2000-02-22

申请号：SG1998003808

申请日：1997-09-23

Applicant: IBM

Inventor： HARPER JAMES M E ,  GEFFKEN ROBERT M

IPC: H05K3/46 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/055 ,  H01L23/525

Abstract: A multilayer interconnected electronic component having increased electromigration lifetime is provided. The interconnections are in the form of studs and comprise vertical side walls having a refractory metal diffusion barrier liner along the sidewalls. The stud does not have a barrier layer at the base thereof and the base of the stud contacts the metallization on the dielectric layer of the component. An adhesion layer can be provided between the base of the stud and the surface of the metallization and the adhesion layer may be continuous or discontinuous. The adhesion layer is preferably a metal such as aluminum which dissolves in the stud or metallization upon heating of the component during fabrication or otherwise during use of the component. A preferred component utilizes a dual Damascene structure.