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公开(公告)号：AU2002365158A1
公开(公告)日：2003-07-09
申请号：AU2002365158
申请日：2002-11-07
Applicant: IBM
Inventor： PETRARCA KEVIN S , STEIN KENNETH J , SUBBANNA SESHADRI , VOLANT RICHARD P , BISSON JOHN C , COTE DONNA R , DALTON TIMOTHY J , GROVES ROBERT A
Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
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12.发明申请LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME 审中-公开通过VIAS的低电阻和电感及其制造方法
公开(公告)号：WO2007084879A3
公开(公告)日：2008-02-21
申请号：PCT/US2007060544
申请日：2007-01-15
Applicant: IBM , ERTURK METE , GROVES ROBERT A , JOHNSON JEFFREY B , JOSEPH ALVIN J , LIU QIZHI , SPROGIS EDMUND J , STAMPER ANTHONY K
Inventor： ERTURK METE , GROVES ROBERT A , JOHNSON JEFFREY B , JOSEPH ALVIN J , LIU QIZHI , SPROGIS EDMUND J , STAMPER ANTHONY K
IPC: H01L21/00 , H01L21/302 , H01L21/306 , H01L21/44 , H01L21/77
CPC classification number: H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
Abstract: A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).
Abstract translation: 背面接触结构及其制造方法。 该方法包括：在衬底（100）中形成绝缘隔离（250），所述衬底（100）具有前侧和相对的背面; 在所述基板（100）的前侧形成第一介电层（105）; 在所述第一电介质层（105）中形成沟槽（265C），所述沟槽（265C）在所述电介质隔离（250）的周边内并且在所述绝缘隔离（250）的周边内并且延伸到所述电介质隔离（250）; 将形成在第一电介质层（105）中的沟槽（265C）延伸通过电介质隔离（250）并延伸到衬底（100）中至小于衬底厚度（001）的深度（D1）。 填充沟槽（265C）并且将沟槽（265C）的顶表面与第一介电层（105）的顶表面共平面化以形成导电通孔（270C）; 以及从所述衬底（100）的背面使所述衬底（100）变薄以暴露所述通孔（270C）。
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公开(公告)号：WO2004078638A3
公开(公告)日：2004-10-28
申请号：PCT/US0334630
申请日：2003-10-28
Applicant: IBM
Inventor： VOLANT RICHARD P , FLORKEY JOHN E , GROVES ROBERT A
CPC classification number: H03K17/965 , H01F7/066 , H01F7/14 , H01F2007/068 , H01H59/0009
Abstract: A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils (20, 30) on a moveable platform (15) and a second plurality of coils (40, 50) on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements or coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
Abstract translation: 描述了能够感应耦合和去耦电信号的微机电（MEM）开关。 电感式MEM开关包括在可移动平台（15）上的第一组多个线圈（20,30）和固定平台或基板上的第二组多个线圈（40,50），可移动平台上的线圈位于 低于固定基板的。 通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和去耦。 分别在可移动和固定基板上的不同布置或线圈允许多极和多位置切换配置。 所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。 本发明的MEMS开关可以使用标准CMOS技术制造。
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公开(公告)号：PL206924B1
公开(公告)日：2010-10-29
申请号：PL37781603
申请日：2003-10-28
Applicant: IBM
Inventor： VOLANT RICHARD P , FLORKEY JOHN E , GROVES ROBERT A
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公开(公告)号：AT368934T
公开(公告)日：2007-08-15
申请号：AT01126761
申请日：2001-11-09
Applicant: IBM
Inventor： GROVES ROBERT A , HERBST BRIAN , JAHNES CHRISTOPHER , PETRARCA KEVIN , VOLANT RICHARD
Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.
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Patent Agency Ranking
公开(公告)号：AU2003287361A8
公开(公告)日：2004-09-28
申请号：AU2003287361
申请日：2003-10-28
Applicant: IBM
Inventor： VOLANT RICHARD P , GROVES ROBERT A , FLORKEY JOHN E
Abstract: A micro-electro mechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a movable platform and a second plurality of coils on a stationary platform or substrate, the coils on the movable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the movable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the movable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
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公开(公告)号：AU2003278176A8
公开(公告)日：2004-05-13
申请号：AU2003278176
申请日：2003-09-18
Applicant: IBM
Inventor： GROVES ROBERT A , VOLANT RICHARD P , CHINTHAKINDI ANIL K , STEIN KENNETH J , SUBBANNA SESHADRI
Abstract: A three-dimensional micro- electromechanical (MEM) varactor is described wherein a movable beam and fixed electrode are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
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公开(公告)号：DE60129657T2
公开(公告)日：2008-05-21
申请号：DE60129657
申请日：2001-11-09
Applicant: IBM
Inventor： GROVES ROBERT A , HERBST BRIAN , JAHNES CHRISTOPHER , PETRARCA KEVIN , VOLANT RICHARD
Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.
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公开(公告)号：DE60224836D1
公开(公告)日：2008-03-13
申请号：DE60224836
申请日：2002-11-07
Applicant: IBM
Inventor： VOLANT RICHARD P , BISSON JOHN C , COTE DONNA R , DALTON TIMOTHY J , GROVES ROBERT A , PETRARCA KEVIN S , STEIN KENNETH J , SUBBANNA SESHADRI
Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.
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公开(公告)号：DE60129657D1
公开(公告)日：2007-09-13
申请号：DE60129657
申请日：2001-11-09
Applicant: IBM
Inventor： GROVES ROBERT A , HERBST BRIAN , JAHNES CHRISTOPHER , PETRARCA KEVIN , VOLANT RICHARD
Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.
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