公开(公告)号：JPH1197449A

公开(公告)日：1999-04-09

申请号：JP12084598

申请日：1998-04-30

Applicant: IBM

Inventor： BROWN JEFFREY S ,  HOLMES STEVEN J ,  LEIDY ROBERT K ,  VOLDMAN STEVEN H

IPC: H01L27/04 ,  G03F7/004 ,  H01L21/027 ,  H01L21/329 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/10 ,  H01L29/861

Abstract: PROBLEM TO BE SOLVED: To suppress a heat runway and improve stability of an ESD-inhibiting device in conjunction with a device scaling, by forming an in-plant under a shallow trench separation part of an ESD device. SOLUTION: An in-plant is formed under a trench separation structure of an ESD(Electrostatic Discharge) device. The in-plant is formed using a hybrid- resist. The hybrid resist formed the in-plant without any additional treatment such as mask-step. An ESD structure of a water part 2100 provides an ESD- inhibiting device function by connecting its input to the ESD device. A P++ diffusion part 2908 and an N-well 2920 constitute the first diode, and the P++ diffusion part 2908 becomes an anode and the N-well 2920 a cathode. Similarly, an N++ diffusion part 2904 and an N-well 2922 which are combined form a cathode of the second diode, and a P-type board becomes an anode.

公开(公告)号：JP2008010870A

公开(公告)日：2008-01-17

申请号：JP2007164722

申请日：2007-06-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HORAK DAVID VACLAV ,  FURUKAWA TOSHIHARU ,  HOLMES STEVEN J ,  KOBURGER CHARLES WILLIAM III ,  MITCHELL PETER H ,  MARK CHARLES HAKEY

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03B27/42 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide an illumination light in an immersion lithography stepper for particle or bubble detection. SOLUTION: Embodiments provide an immersion lithography exposure system comprising a wafer holder for holding a wafer, an immersion liquid for covering the wafer, an immersion head to dispense and contain the immersion liquid, and a light source adapted to lithographically expose a resist on the wafer. The system also comprises a light detector at a first location of the immersion head and a laser source at a second location within the immersion head. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供用于颗粒或气泡检测的浸没式光刻步进机中的照明光。 解决方案：实施例提供了一种浸没式光刻曝光系统，其包括用于保持晶片的晶片保持器，用于覆盖晶片的浸没液体，用于分配和容纳浸没液体的浸没头，以及适于光刻曝光抗蚀剂的光源 在晶圆上。 该系统还包括在浸没头的第一位置处的光检测器和在浸没头内的第二位置处的激光源。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007158332A

公开(公告)日：2007-06-21

申请号：JP2006322502

申请日：2006-11-29

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAVID VACLAV HORAK ,  KOBURGER CHARLES W III ,  HAKEY MARK CHARLES ,  HOLMES STEVEN J ,  FURUKAWA TOSHIHARU

IPC: H01L27/10

CPC classification number: G11C13/025 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0512

Abstract: PROBLEM TO BE SOLVED: To provide a memory cell structure without gate leak current, and an activation method thereof. SOLUTION: The structure includes (a) a substrate, (b) first and second electrode regions 610, 1120 on the substrate, and (c) a third electrode region 1110 arranged between the first electrode region and the second electrode region. When a first write voltage potential is applied between the first electrode and the third electrode region, in response thereto, the third electrode region changes the shape of its own and then, when a predetermined read voltage potential is applied between the first electrode region and the third electrode region, in response thereto, a sense current flows between the first electrode region and the third electrode region. Further, when a second write voltage potential is applied between the second electrode region and the third electrode region, in response thereto, no sense current flows between the first electrode region and the third electrode region. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供没有栅极泄漏电流的存储单元结构及其激活方法。 解决方案：该结构包括（a）基板，（b）基板上的第一和第二电极区域610,1120，以及（c）布置在第一电极区域和第二电极区域之间的第三电极区域1110。 当在第一电极和第三电极区域之间施加第一写入电压电位时，响应于此，第三电极区域改变其本身的形状，然后当在第一电极区域和第二电极区域之间施加预定的读取电压电位时， 响应于此，感测电流在第一电极区域和第三电极区域之间流动。 此外，当在第二电极区域和第三电极区域之间施加第二写入电压电位时，响应于此，第一电极区域和第三电极区域之间没有感测电流流动。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005170785A

公开(公告)日：2005-06-30

申请号：JP2004353589

申请日：2004-12-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK CHARLES ,  HOLMES STEVEN J ,  HORAK DAVID VACLAV ,  KOBURGER CHARLES W III ,  MITCHELL PETER H ,  NESBIT LARRY A

IPC: C01B31/02 ,  B32B9/00 ,  B82B3/00 ,  C01B31/00 ,  H01J1/304 ,  H01J9/02 ,  H01L29/04

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  C01B2202/22 ,  C01B2202/34 ,  H01J1/3044 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/843 ,  Y10T428/30

Abstract: PROBLEM TO BE SOLVED: To provide a method for synthesizing carbon nanotubes and a structure formed by the carbon nanotubes. SOLUTION: A method for synthesizing the carbon nanotubes includes a step for forming carbon nanotubes on a plurality of synthesis sites supported by a first substrate, a step for interrupting nanotube synthesis, a step for mounting a free end of each carbon nanotube onto a second substrate, and a step for removing the first substrate. Each carbon nanotube is capped by one of the synthesis sites, to which growth reactants have ready access. As the carbon nanotubes lengthen during resumed nanotube synthesis, access to the synthesis sites remains unoccluded. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：提供合成碳纳米管的方法和由碳纳米管形成的结构。 解决方案：用于合成碳纳米管的方法包括在由第一衬底支撑的多个合成位置上形成碳纳米管的步骤，用于中断纳米管合成的步骤，将每个碳纳米管的自由端安装到 第二基板和用于去除第一基板的步骤。 每个碳纳米管被其中一个合成位点封盖，生长反应物可以随时进入。 由于碳纳米管在恢复纳米管合成过程中延长，所以进入合成位点仍未被排除。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2007106855A2

公开(公告)日：2007-09-20

申请号：PCT/US2007063977

申请日：2007-03-14

Applicant: IBM ,  FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W

IPC: F15C1/06

CPC classification number: F15C1/06 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/0094 ,  Y10T29/49236 ,  Y10T29/49412 ,  Y10T137/2224

Abstract: Micro-valves (257) and micro-pumps (400) and methods of fabricating micro- valves (257) and micro-pumps (400). The micro-valves (257) and micro-pumps (400) include electrically conductive diaphragms (155) fabricated from electrically conductive nano-fibers. Fluid flow through the micro-valves (257) and pumping action of the micro-pumps (400) is accomplished by applying electrostatic forces to the electrically conductive diaphragms (155).

Abstract translation: 微型阀（257）和微型泵（400）以及微型阀（257）和微型泵（400）的制造方法。 微阀（257）和微泵（400）包括由导电纳米纤维制成的导电隔膜（155）。 通过对导电隔膜（155）施加静电力来实现通过微型阀（257）的流体流动和微型泵（400）的泵送作用。

公开(公告)号：WO2006076377A2

公开(公告)日：2006-07-20

申请号：PCT/US2006000844

申请日：2006-01-10

Applicant: IBM ,  FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III

IPC: H01L21/3205

CPC classification number: H01L21/76885 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76874 ,  H01L23/5283 ,  H01L23/53209 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Conductive sidewall spacer stractures are formed using a method tiiat patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

Abstract translation: 导电侧壁间隔物结构使用方法（图案）结构（心轴）形成并激活结构的侧壁。 金属离子附着在结构的侧壁上，这些金属离子被还原成晶种。 然后对结构进行修整，并且种子材料被电镀以在结构的侧壁上形成布线。

公开(公告)号：WO2013023124A3

公开(公告)日：2013-07-11

申请号：PCT/US2012050267

申请日：2012-08-10

Applicant: IBM ,  CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

IPC: G03F7/004 ,  C09D133/04 ,  G03F7/039 ,  G03F7/09

CPC classification number: G03F7/0382 ,  C09J133/14 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

Abstract translation: 负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。 在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。

公开(公告)号：WO2008039166A2

公开(公告)日：2008-04-03

申请号：PCT/US2006028464

申请日：2006-07-21

Applicant: IBM ,  FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/16 ,  G11C2213/77 ,  Y10S977/742 ,  Y10S977/939 ,  Y10S977/943

Abstract: Non-volatile and radiation-hard switching and memory devices (225) using vertical nano-tubes (155) and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.

Abstract translation: 使用垂直纳米管（155）的非易失性和辐射硬的开关和存储器件（225）并且通过范德华力力可逆地保持状态和制造器件的方法。 用于感测装置状态的装置包括测量电容，以及隧穿和场发射电流。

公开(公告)号：WO2005069372A8

公开(公告)日：2005-11-03

申请号：PCT/US0340295

申请日：2003-12-18

Applicant: IBM ,  FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III ,  NESBIT LARRY A

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  KOBURGER CHARLES W III ,  NESBIT LARRY A

IPC: H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/10864 ,  B82Y10/00 ,  H01L27/10861 ,  Y10S977/936 ,  Y10S977/943 ,  Y10S977/948

Abstract: A trench-type storage device includes a trench in a substrate (100), with bundles of carbon nanotubes (202) lining the trench and a trench conductor (300) filling the trench. A trench dielectric (200) may be formed between the carbon nanotubes and the sidewall of the trench. The bundles of carbon nanotubes form an open cylinder structure lining the trench. The device is formed by providing a carbon nanotube catalyst structure on the substrate and patterning the trench in the substrate; the carbon nanotubes are then grown down into the trench to line the trench with the carbon nanotube bundles, after which the trench is filled with the trench conductor.

Abstract translation: 沟槽型存储器件包括在衬底（100）中的沟槽，衬有沟槽的碳纳米管束（202）和填充沟槽的沟槽导体（300）。 可以在碳纳米管和沟槽的侧壁之间形成沟槽电介质（200）。 碳纳米管束形成沟槽衬里的开放柱状结构。 该装置通过在基底上提供碳纳米管催化剂结构并在基底中图案化沟槽而形成; 然后将碳纳米管向下生长到沟槽中以将沟槽与碳纳米管束对齐，之后用沟槽导体填充沟槽。

公开(公告)号：DE112012005734T5

公开(公告)日：2014-11-13

申请号：DE112012005734

申请日：2012-12-20

Applicant: IBM

Inventor： ARNOLD JOHN C ,  BURNS SEAN D ,  HOLMES STEVEN J ,  HORAK DAVID V ,  SANKARAPANDIAN MUTHUMANICKAM ,  YIN YUNPENG

IPC: H01L21/027 ,  G03F1/68 ,  G03F1/80 ,  G03F7/20

Abstract: Eine erste metallische Hartmaskenschicht über einer dielektrischen Zwischenverbindungsebenen-Schicht wird mit einem Leitungsmuster strukturiert. Oberhalb der ersten metallischen Hartmaskenschicht wird wenigstens eine Schicht aus einem dielektrischen Material, eine zweite metallische Hartmaskenschicht, eine erste organische Planarisierungsschicht (OPL) sowie ein erstes Photoresist angebracht. Ein erstes Durchkontakt-Muster wird von der ersten Photoresistschicht in die zweite metallische Hartmaskenschicht hinein transferiert. Eine zweite OPL und ein zweites Photoresist werden angebracht und mit einem zweiten Durchkontakt-Muster strukturiert, das in die zweite metallische Hartmaskenschicht hinein transferiert wird. Ein erstes Kombinationsmuster aus dem ersten und dem zweiten Durchkontaktmuster wird in die wenigstens eine Schicht aus einem dielektrischen Material transferiert. Ein zweites Kombinationsmuster, welches das erste Kombinationsmuster mit den Gebieten der Öffnungen in der ersten metallischen Hartmaskenschicht begrenzt, wird in die dielektrische Zwischenverbindungsebenen-Schicht hinein transferiert.