HEAT DISSIPATION DEVICE FOR ELECTRONIC CIRCUIT CHIP COOLING

    公开(公告)号:JP2000236051A

    公开(公告)日:2000-08-29

    申请号:JP2000028596

    申请日:2000-02-07

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To improve cooling of an electronic circuit chip by providing a part whose one side is a practically flat plate and the other side extends outward as it is near at least a single central part. SOLUTION: A heat dissipation device 10 comprises a protrusion 15 which extends outward forming a solder layer 20 of a variable thickness. The solder layer 20 becomes thin as it is really near a central part of a boss 15. The solder layer 20 becomes thick in its outward extension direction from a central part of the boss 15. A metallization layer 21 is provided for providing proper adhesion between a chip 30 and the solder layer 20. The chip 30 is fixed to a substrate 40 by what is called flip-chip constitution. The substrate 40 comprises mutual connection which provides electrical circuit coupling between each part of the chip 30 and a pin 45. The chip 30 is fixed in mutual connection on a substrate 40 by solder hole technique, etc.

    METAL/FERRITE LAMINATED MAGNET AND ITS MANUFACTURE

    公开(公告)号:JPH1140047A

    公开(公告)日:1999-02-12

    申请号:JP12436698

    申请日:1998-05-07

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To form a magnet by forming apertures in a metal sheet, fixing at least one ferrite layer on the first surface, fixing at least one dielectric layer on the second surface, and forming apertures which partially overlap with the apertures of the metal sheet through the ferrite layers and the dielectric layers. SOLUTION: A photoresist is detached from a metal sheet 105. Etched metal sheet 105 is examined, and it can be confirmed that all of apertures 65 exist and dimensional tolerance and positional tolerance of the apertures are met. The metal sheet 105 needs to be formed so that adhesion of the metal sheet 105 itself to the following ferrite layers 15 or the dielectric layers 13 or both of them is strengthened. The ferrite layers 15 are formed by generating slurry moldable as a thin ferrite-sheets by combining a ferrite material, glass powder, an organic binder, a solvent, and a vehicle. At the same time, a dielectric material, as slurry, is converted into the dielectric layers 13.

    Electronic component structure and manufacture of thin film multilayered capacitor
    17.
    发明专利
    Electronic component structure and manufacture of thin film multilayered capacitor 有权
    薄膜多层电容器的电子元件结构与制造

    公开(公告)号:JPH11274407A

    公开(公告)日:1999-10-08

    申请号:JP3290499

    申请日:1999-02-10

    CPC classification number: H01L28/40 H01G4/306 Y10T29/435

    Abstract: PROBLEM TO BE SOLVED: To provide an electronic component structure in which an interposer thin film capacitor structure is used between an electronic component and a multilayered circuit card. SOLUTION: In order to prevent the occurrence of fatal electric short circuits in an upper thin film area due to pits, voids, undulations on the surface of a substrate, a first metallic layer 5 having a thickness of about 0.5 μm to 10 μm is formed on the substrate and a thin film containing a dielectric film 6 and a second metallic film is formed on the metallic layer 5. The first metallic layer 5 is composed of Pt, another electrode metal, or a combination of Pt, Cr, Cu metal, and a diffusion barrier layer. In order to increase the adhesive power of the layer 5, an additional Ti layer can be used. The thicknesses of the Cr layer, Cu layer, diffusion barrier layer, and Pt layer constituting the first metallic layer 5 are respectively adjusted to about 200 Å, between about 0.5 μm and about 10 μm, between about 1,000 Å and about 5,000 Å and between about 100 Å and about 2,500 Å.

    Abstract translation: 要解决的问题:提供一种在电子部件和多层电路卡之间使用中介层薄膜电容器结构的电子部件结构。 解决方案:为了防止由于基板表面上的凹坑,空隙,波纹引起的上部薄膜区域中的致命电短路,形成厚度为约0.5μm至10μm的第一金属层5 在金属层5上形成含有介电膜6和第二金属膜的薄膜。第一金属层5由Pt,另一种电极金属或Pt,Cr,Cu金属, 和扩散阻挡层。 为了增加层5的粘合力,可以使用另外的Ti层。 构成第一金属层5的Cr层,Cu层,扩散阻挡层和Pt层的厚度分别调节为约200,约0.5μm和约10μm之间,介于约至约5000之间和介于 约100埃和约2,500埃。

    Advanced handler wafer debonding method

    公开(公告)号:GB2520905A

    公开(公告)日:2015-06-03

    申请号:GB201506267

    申请日:2013-09-20

    Applicant: IBM

    Abstract: A method for processing a semiconductor wafer includes applying a release layer to a transparent handler (S11). An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon (S12). The semiconductor wafer is bonded to the transparent handler using the adhesive layer (S13). The semiconductor wafer is processed while it is bonded to the transparent handler (S14). The release layer is ablated by irradiating the release layer through the transparent handler with a laser (S16). The semiconductor wafer is removed from the transparent handler (S17).

    CONJUNTOS DE CONEXIONES OPTICAS.
    19.
    发明专利

    公开(公告)号:ES2253697T3

    公开(公告)日:2006-06-01

    申请号:ES03750726

    申请日:2003-08-28

    Applicant: IBM

    Abstract: Una estructura de montaje óptico para la conexión de una serie de áreas bidimensionales de matrices de VCSEL a un cuadro, que comprende: una matriz de VCSEL (10) que contiene dicha serie de áreas de VCSEL (15-i), estado rodeada dicha serie de áreas por una costura de adhesión metalizada (12) sobre una superficie superior de la misma; una unidad de transferencia óptica de precisión (20) que contiene una costura de adhesión (22) correspondiente sobre su parte inferior que corresponde a dicha costura de adhesión metalizada (12) sobre dicha matriz de VCSEL (10), estando dispuesta dicha costura (22) correspondiente sobre la parte inferior de un reborde (23), de manera que la alineación entre dicha matriz (10) y dicha unidad de transferencia óptica (20) es proporcionada por el reborde (23) que está adaptado para formar un borde vertical (13) de un escalón que es decapado en la parte superior de la matriz (10); y una primera serie de salientes (24) sobre una superficie superior de dicha unidad detransferencia óptica (20); conteniendo dicha unidad de transferencia óptica (20) medios de transferencia óptica (25-i) para transferir radiación emitida desde dicha serie de áreas de VCSEL (15- i), por lo que la limitación de la tolerancia para dichos medios de transferencia óptica (25-i) es 10 m, y la limitación de la tolerancia para la distancia vertical entre dichos medios de transferencia óptica (25-i) y dicha matriz de VCSEL (10) es 50 m; y un conector óptico (30) enchufable que tiene una unidad de transmisión óptica (35) insertada en una cavidad del mismo, una serie de receptáculos de interbloqueo (34) sobre una superficie inferior del mismo que coincide con dicha primera serie de salientes (24) sobre dicha superficie superior de dicha unidad de transferencia óptica (20) y una segunda serie de salientes (36) sobre una superficie superior de dicho conector óptico (30) enchufable para coincidencia con dicho cuadro.

    20.
    发明专利
    未知

    公开(公告)号:DE60303140T2

    公开(公告)日:2006-08-31

    申请号:DE60303140

    申请日:2003-08-28

    Applicant: IBM

    Abstract: A set of interlocking modules supports and connects a die containing lasers, a set of precision molded lenses and a set of beam switching elements. Another embodiment of the invention is a structure for mounting a logic chip and an optical chip on a chip carrier, with the optical chip being mounted on the side of the carrier facing the system board on which the carrier is mounted, so that radiation travels in a straight path from optical sources on the optical chip into optical transmission guides on the board.

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