公开(公告)号：SG65024A1

公开(公告)日：1999-05-25

申请号：SG1997003669

申请日：1997-10-06

Applicant: IBM

Inventor： COONEY EDWARD C III ,  LEE HYUN K ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K

IPC: H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/56

Abstract: Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

公开(公告)号：SG63784A1

公开(公告)日：1999-03-30

申请号：SG1997004394

申请日：1997-12-10

Applicant: IBM

Inventor： HAKEY MARK C ,  HORAK DAVID V ,  LUCE STEPHEN E ,  MCDEVITT THOMAS L ,  NOBLE WANDELL P

IPC: H01L21/18 ,  H01L21/22 ,  H01L23/48

公开(公告)号：CA2061119A1

公开(公告)日：1992-10-20

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.