公开(公告)号：WO0243119A3

公开(公告)日：2003-03-13

申请号：PCT/US0150830

申请日：2001-10-25

Applicant: IBM

Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI V

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

Abstract translation: 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如环状硅氧烷和含有环结构的有机分子，例如四甲基环四硅氧烷和环戊烯氧化物。 为了稳定PECVD反应器中的等离子体，从而提高沉积膜的均匀性，将CO 2作为载气添加到TMCTS中，或者将CO 2或CO 2和O 2的混合物加入到PECVD反应器中。

公开(公告)号：AU2003230825A1

公开(公告)日：2003-11-03

申请号：AU2003230825

申请日：2003-04-01

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM ,  PFEIFFER DIRK

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.

公开(公告)号：DE112010005304T8

公开(公告)日：2013-03-14

申请号：DE112010005304

申请日：2010-10-22

Applicant: IBM

Inventor： BURNS SEAN D ,  MEDEIROS DAVID R ,  PFEIFFER DIRK

IPC: G03F7/09

公开(公告)号：SG137694A1

公开(公告)日：2007-12-28

申请号：SG2005049093

申请日：2001-10-25

Applicant: IBM

Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

公开(公告)号：DE112010005304T5

公开(公告)日：2012-12-20

申请号：DE112010005304

申请日：2010-10-22

Applicant: IBM

Inventor： BURNS SEAN D ,  MEDEIROS DAVID R ,  PFEIFFER DIRK

IPC: G03F7/00

Abstract: Eine reflexionsmindernde Hartmaskenzusammensetzungsschicht mit einem Polymer, das in seinem Rückgrat Si-O- und siliciumfreie anorganische Einheiten aufweist. Das Polymer enthält chromophore und transparente Molekülteile und eine Vernetzungskomponente. Die reflexionsmindernde Hartmaskenzusammensetzungsschicht wird in einem Verfahren zur Bildung eines strukturierten Materials auf einem Substrat verwendet.