公开(公告)号：DE69300616T2

公开(公告)日：1996-05-30

申请号：DE69300616

申请日：1993-03-23

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  WHITAKER JOEL R

IPC: G03F7/023 ,  C08G77/388 ,  C08G77/392 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  C08G77/38

Abstract: Photo sensitive silicon-containing resist compositions comprising silsesquioxane and aromatic siloxane esters with diazonaphthoquinone sulfonyl groups for imageable O2 RIE barrier films, and method for using the same.

公开(公告)号：DE69300616D1

公开(公告)日：1995-11-16

申请号：DE69300616

申请日：1993-03-23

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  WHITAKER JOEL R

IPC: G03F7/023 ,  C08G77/388 ,  C08G77/392 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  C08G77/38

Abstract: Photo sensitive silicon-containing resist compositions comprising silsesquioxane and aromatic siloxane esters with diazonaphthoquinone sulfonyl groups for imageable O2 RIE barrier films, and method for using the same.

公开(公告)号：CA1217636A

公开(公告)日：1987-02-10

申请号：CA470463

申请日：1984-12-18

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  AVIRAM ARI ,  WIZNER MARK A

IPC: B41M5/392 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  G01D15/10

Abstract: IMPROVED CHEMICAL HEAT AMPLIFICATION IN THERMAL TRANSFER PRINTING Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and include hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.

公开(公告)号：MY117336A

公开(公告)日：2004-06-30

申请号：MYPI20012928

申请日：2001-06-21

Applicant: IBM

Inventor： BERGER DANIEL GEORGE ,  FAROOQ SHAJI ,  HERRON LESTER WYNN ,  HUMENIK JAMES N ,  KNICKERBOCKER JOHN ULRICH ,  PASCO ROBERT WILLIAM ,  PERRY CHARLES H ,  SACHDEV KRISHNA G

IPC: B32B5/16 ,  B32B18/00 ,  G02B6/12 ,  G02B6/00 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H05K1/03 ,  H05K1/05 ,  H05K3/46

Abstract: A COMPOSITE ELECTRONIC AND/OR OPTICAL SUBSTRATE INCLUDING POLYMERIC AND CERAMIC MATERIAL WHEREIN THE COMPOSITE SUBSTRATE HAS A DIELECTRIC CONSTANT LESS THAN 4 AND A COEFFICIENT OF THERMAL EXPANSION OF 8 TO 14 PPM/°C AT 100°C. THE COMPOSITE SUBSTRATE MAY BE EITHER CERAMIC-FILLED POLYMERIC MATERIAL OR POLYMER-FILLED CERAMIC MATERIAL. (FIGURE 1)

公开(公告)号：DE3663312D1

公开(公告)日：1989-06-15

申请号：DE3663312

申请日：1986-10-21

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  KWONG RANEE W ,  KHOJASTEH MAHMOUD M ,  SACHDEV HARBANS S

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03F7/10

Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-­polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.

公开(公告)号：CA1221833A

公开(公告)日：1987-05-19

申请号：CA469462

申请日：1984-12-06

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  PENNINGTON KEITH S ,  COHEN MITCHELL S

IPC: G06K15/14 ,  B41M5/24

Abstract: ELECTROEROSION PRINT MEDIA HAVING PROTECTIVE COATINGS MODIFIED WITH ORGANOTITANIUM REAGENTS The present invention provides an improved electroerosion recording medium which comprises, in a preferred embodiment, a non-conductive support, a hard, abrasion resistant layer, preferably comprising an organic polymer matrix containing an inorganic particulate material, a thin conductive film, typically of a metal such as aluminum, and an abrasion resistant overlayer that most preferably comprises a solid conductive lubricant dispersed in an organotitanium reagent modified polymer system. The overlayer is highly adherent to the conductive surface, has a low organic binder content and provides effective protection against abrasion of the conductive layer and fouling of a print head during electroerosion printing.

公开(公告)号：CA1220028A

公开(公告)日：1987-04-07

申请号：CA465430

申请日：1984-10-15

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  AVIRAM ARI

IPC: B41M5/392 ,  B41J2/325 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  C09D11/00 ,  C09D11/02 ,  G01D15/10

Abstract: INK ADDITIVES FOR THERMAL INK TRANSFER PRINTING PROCESSES By adding an aromatic azido compound which exotherms at the conditions of thermal ink transfer to a thermal transfer ink, an improved thermal transfer ink and thermal transfer ink process are achieved.

公开(公告)号：CA1212890A

公开(公告)日：1986-10-21

申请号：CA483492

申请日：1985-06-07

Applicant: IBM

Inventor： ANDERSON HERBERT R JR ,  SACHDEV HARBANS S ,  SACHDEV KRISHNA G

IPC: H01L21/3205 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/04 ,  H05K3/06

Abstract: USE OF DEPOLYMERIZABLE POLYMERS IN THE FABRICATION OF LIFT-OFF STRUCTURE FOR MULTILEVEL METAL PROCESSES An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.