公开(公告)号：WO2005024906A2

公开(公告)日：2005-03-17

申请号：PCT/US2004027327

申请日：2004-08-20

Applicant: IBM ,  WANG YUN YU ,  STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

Inventor： STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL JR ,  JAMISON PAUL

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L29/4958

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure (260) is first formed on an etch stop layer (250) provided on a semiconductor substrate (240). A pair of spacers (400) is provided on sidewalls of the sacrificial gate structure (300). The sacrificial gate structure (300) is then removed, forming an opening (600). Subsequently, a metal gate (1000) including an first layer (700) of metal such as tungsten, a diffusion barrier (800) such as titanium nitride, and a second layer (900) of metal such as tungsten is formed in the opening (600) between the spacers (400).

Abstract translation: 提供了一种用于高性能器件的金属替换栅极的结构和方法。 牺牲栅极结构（260）首先形成在设置在半导体衬底（240）上的蚀刻停止层（250）上。 在牺牲栅极结构（300）的侧壁上设置一对间隔物（400）。 然后去除牺牲栅极结构（300），形成开口（600）。 接着，在开口部形成有包括诸如钨的金属的第一层（700），诸如氮化钛的扩散阻挡层（800）和诸如钨的金属的第二层（900）的金属栅极（1000） 600）之间。

公开(公告)号：DE602004022435D1

公开(公告)日：2009-09-17

申请号：DE602004022435

申请日：2004-08-20

Applicant: IBM

Inventor： STEEGEN AN L ,  KU VICTOR ,  WONG KWONG HON ,  LI YING ,  NARAYANAN VIJAY ,  CABRAL CYRIL OSSINING ,  JAMISON PAUL

IPC: H01L29/94 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/49

Abstract: A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

公开(公告)号：DE602004032035D1

公开(公告)日：2011-05-12

申请号：DE602004032035

申请日：2004-08-04

Applicant: IBM

Inventor： CHEN HUAJIE ,  CHIDAMBARRAO DURESETI ,  GLUSCHENKOV OLEG G ,  STEEGEN AN L ,  YANG HAINING S

IPC: H01L31/0328 ,  H01L21/20 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12