公开(公告)号：GB2505853B

公开(公告)日：2015-11-25

申请号：GB201400368

申请日：2012-06-01

Applicant: IBM

Inventor： CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER ROBERT J JR ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS D

IPC: H01L29/66 ,  H01L27/02

公开(公告)号：GB2505853A

公开(公告)日：2014-03-12

申请号：GB201400368

申请日：2012-06-01

Applicant: IBM

Inventor： CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER JR ROBERT J ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS D

IPC: H01L29/66 ,  H01L27/02

Abstract: Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include an SCR (62) with an anode (63), a cathode (65), a first region (14), and a second region (16) of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer (26) is positioned on a top surface of a semiconductor substrate (30) relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.