公开(公告)号：EP2286444A4

公开(公告)日：2012-11-21

申请号：EP09747138

申请日：2009-04-28

Applicant: IBM

Inventor： ESHUN EBENEZER E ,  HE ZHONG-XIANG ,  RASSEL ROBERT M ,  COOLBAUGH DOUGLAS ,  GEBRESELASIE EPHREM G ,  WANG PING-CHUAN ,  KIM DEOK-KEE ,  KOTHANDARAMAN CHANDRASEKHARAN ,  ROBSON NORMAN W ,  MOY DAN ,  SAFRAN JOHN M ,  STEIN KENNETH J ,  HO HERBERT L ,  YAN HONGWEN

IPC: H01L23/525 ,  H01L27/06

CPC classification number: H01L27/0629 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2009140052A3

公开(公告)日：2010-01-21

申请号：PCT/US2009041861

申请日：2009-04-28

Applicant: IBM ,  ESHUN EBENEZER E ,  HE ZHONG-XIANG ,  RASSEL ROBERT M ,  COOLBAUGH DOUGLAS ,  GEBRESELASIE EPHREM G ,  WANG PING-CHUAN ,  KIM DEOK-KEE ,  KOTHANDARAMAN CHANDRASEKHARAN ,  ROBSON NORMAN W ,  MOY DAN ,  SAFRAN JOHN M ,  STEIN KENNETH J ,  HO HERBERT L ,  YAN HONGWEN

Inventor： ESHUN EBENEZER E ,  HE ZHONG-XIANG ,  RASSEL ROBERT M ,  COOLBAUGH DOUGLAS ,  GEBRESELASIE EPHREM G ,  WANG PING-CHUAN ,  KIM DEOK-KEE ,  KOTHANDARAMAN CHANDRASEKHARAN ,  ROBSON NORMAN W ,  MOY DAN ,  SAFRAN JOHN M ,  STEIN KENNETH J ,  HO HERBERT L ,  YAN HONGWEN

IPC: H01L21/335

CPC classification number: H01L27/0629 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.

Abstract translation: 半导体结构和半导体结构的制造方法提供一种场效应器件，其位于和形成在半导体衬底的有源区上，并且至少一个熔丝结构，抗熔丝结构和电阻结构中的至少一个至少位于并形成 部分地同时地在与半导体衬底内的有源区域横向分离的隔离区域上。 场效应器件包括包括高介电常数介电材料的栅极电介质和包括金属材料的栅电极。 熔丝结构，反熔丝结构和电阻器结构中的至少一个包括包括与栅极电介质相同的材料的焊盘电介质，以及可选地还包括熔断器，反熔丝或电阻器，其可以包括与所述栅极电介质相同的金属材料 栅电极。

公开(公告)号：WO2012177375A3

公开(公告)日：2014-05-01

申请号：PCT/US2012040372

申请日：2012-06-01

Applicant: IBM ,  CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER ROBERT J ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS

Inventor： CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER ROBERT J ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS

IPC: H01L29/02

CPC classification number: H01L29/7315 ,  G06F17/5063 ,  H01L27/0262 ,  H01L29/66393 ,  H01L29/7436

Abstract: Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include an SCR (62) with an anode (63), a cathode (65), a first region (14), and a second region (16) of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer (26) is positioned on a top surface of a semiconductor substrate (30) relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.

Abstract translation: 可控硅整流器的器件结构，制造方法，操作方法和设计结构。 该方法包括以足以调节SCR的触发电流的水平对可控硅整流器（SCR）的区域施加机械应力。 装置和设计结构包括具有阳极（63），阴极（65），第一区域（14）和与第一区域相反的导电类型的第二区域（16）的SCR（62）。 SCR的第一和第二区域设置在SCR的阳极和阴极之间的通电路径中。 层（26）相对于第一区域被定位在半导体衬底（30）的顶表面上，并且被配置为使得在SCR的第一区域中的机械应力处于足以调制SCR的触发电流的水平。

公开(公告)号：GB2505853B

公开(公告)日：2015-11-25

申请号：GB201400368

申请日：2012-06-01

Applicant: IBM

Inventor： CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER ROBERT J JR ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS D

IPC: H01L29/66 ,  H01L27/02

公开(公告)号：GB2505853A

公开(公告)日：2014-03-12

申请号：GB201400368

申请日：2012-06-01

Applicant: IBM

Inventor： CAMILLO-CASTILLO RENATA ,  DAHLSTROM ERIK M ,  GAUTHIER JR ROBERT J ,  GEBRESELASIE EPHREM G ,  PHELPS RICHARD A ,  SHI YUN ,  STRICKER ANDREAS D

IPC: H01L29/66 ,  H01L27/02

Abstract: Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include an SCR (62) with an anode (63), a cathode (65), a first region (14), and a second region (16) of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer (26) is positioned on a top surface of a semiconductor substrate (30) relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.