公开(公告)号：DE69929496T2

公开(公告)日：2006-08-24

申请号：DE69929496

申请日：1999-03-09

Applicant: IBM

Inventor： EDELSTEIN DANIEL CHARLES ,  HARPER JAMES MCKELL EDWIN WINC ,  HU CHAO-KUN ,  SIMON ANDREW H ,  UZOH CYPRIAN EMEKA

IPC: H01L23/52 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/768

Abstract: The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

公开(公告)号：DE69637333D1

公开(公告)日：2008-01-10

申请号：DE69637333

申请日：1996-06-12

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS C ,  DELIGIANNI HARIKLIA ,  HARPER JAMES MCKELL EDWIN ,  HU CHAO-KUN ,  PEARSON DALE JONATHAN ,  REYNOLDS SCOTT KEVIN ,  TU KING-NING ,  UZOH CYPRIAN EMEKA

IPC: C22C9/00 ,  H01L23/532 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

公开(公告)号：DE69929496D1

公开(公告)日：2006-04-06

申请号：DE69929496

申请日：1999-03-09

Applicant: IBM

Inventor： EDELSTEIN DANIEL CHARLES ,  HARPER JAMES MCKELL EDWIN C O ,  HU CHAO-KUN ,  SIMON ANDREW H ,  UZOH CYPRIAN EMEKA

IPC: H01L23/52 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/768

Abstract: The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

公开(公告)号：SG71867A1

公开(公告)日：2000-04-18

申请号：SG1998004653

申请日：1998-11-12

Applicant: IBM

Inventor： UZOH CYPRIAN EMEKA

IPC: C23C18/31 ,  H01L21/285 ,  H01L21/288 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H05K3/06 ,  H05K3/10 ,  H01L23/52

Abstract: Metal wiring is provided in an integrated circuit by sputter coating onto a semiconductor substrate a copper seed layer; depositing and patterning a photoresist; electroplating or electrolessly plating a metal within the openings of the photoresist; stripping the remaining photoresist; and etching the copper seed layer with an etchant that preferentially etches the copper seed layer at a rate higher than that for the electroplated or electrolessly plated metal.