公开(公告)号：JPH11340229A

公开(公告)日：1999-12-10

申请号：JP11751399

申请日：1999-04-26

Applicant: IBM

Inventor： EDELSTEIN DANIEL CHARLES ,  HARPER JAMES MCKELL EDWIN ,  HU CHAO-KUN ,  SIMON ANDREW H ,  UZOH CYPRIAN EMEKA

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide an interconnected structure of copper alloys having improved electromigration resistance force, adhesion and other surface characteristics. SOLUTION: Copper conductor bodies 56 and 60 and a copper alloy or metal seed layer 76 disposed between the copper conductor bodies and an electronic device are utilized to provide a novel interconnected structure for establishing electrical communication with the electronic device. In order to improve the electromigration resistance force, an adhesion property to a barrier layer, device surface characteristics or an adhesion process, copper-based seed layers of various decompositions or a specific metal seed layer can be used according to each purpose.

公开(公告)号：JP2005136433A

公开(公告)日：2005-05-26

申请号：JP2004362864

申请日：2004-12-15

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit.
SOLUTION: By electroplating Cu in a bath which includes an additive and is usually used for adhering Cu metal which is flat and glossy and has high ductility and low stress, seamless semiconductor without void is obtained. This method allows a feature to be super-filled up without leaving void or seam. The resistance of electromigration with the structure utilizing Cu which is electroplated by this method is more excellent than the resistance of electromigration with the structure manufactured using Cu which is adhered by methods other than AlCu structure or electroplating.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于集成电路的亚微米互连结构的制造方法。 解决方案：通过在包含添加剂的浴中电镀Cu，通常用于粘附平坦且光滑且具有高延展性和低应力的Cu金属，获得无空隙的无缝半导体。 这种方法允许特征被超填充而不留下空隙或接缝。 利用该方法电镀Cu结构的电迁移电阻比使用除AlCu结构或电镀以外的方法附着的Cu制造的结构的电迁移电阻更好。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2010206212A

公开(公告)日：2010-09-16

申请号：JP2010098911

申请日：2010-04-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTINOU ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: H01L21/3205 ,  C25D3/38 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a submicron interconnection structure for an integrated circuit. SOLUTION: A seamless conductor without void can be obtained by electroplating Cu from a bath, usually employed for adhering Cu metal which comprises an adhering agent and which is flat, glossy, ductile and low stress. The capability of this method which permits super feature fill up without leaving void or seam is unique and more excellent than any other adhering methods. The resistance of electromigration having a structure utilizing Cu electroplated by this method is superior to the resistance of electromigration having a structure manufactured by employing Cu adhered in an AlCu structure or by a method except electroplating. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于集成电路的亚微米互连结构的制造方法。 解决方案：通过从浴中电镀Cu，通常用于粘附包含粘合剂的Cu金属并且是平坦的，有光泽的，延性的和低应力的，可以获得无空隙的无缝导体。 这种允许超级特征填充而不留下空隙或接缝的方法的能力是独特的，比任何其他粘合方法更优异。 具有利用通过该方法电镀的Cu的结构的电迁移电阻优于具有通过使用以AlCu结构附着的Cu制造的结构的电迁移的电阻或通过除电镀之外的方法。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2003007707A

公开(公告)日：2003-01-10

申请号：JP2002137914

申请日：2002-05-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： CABRAL CYRIL JR ,  DEHAVEN PATRICK WILLIAM ,  EDELSTEIN DANIEL CHARLES ,  KLAUS DAVID PETER ,  POLLARD III JAMES MANLEY ,  STANIS CAROL L ,  UZOH CYPRIAN EMEKA

IPC: C01G35/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/538 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L21/76846 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/11 ,  H01L24/12 ,  H01L29/4933 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: PROBLEM TO BE SOLVED: To provide a metal diffusion barrier layer having excellent bonding properties to metals and dielectric materials. SOLUTION: An electrical interconnect structure where the TaN layer of a hexagonal phase is incorporated between a first material such as copper and a second one such as Al, W, and PbSn, and a barrier layer is disclosed. Additionally, the multiplayer of TaN of the hexagonal phase and α phase Ta is disclosed as the barrier layer. The problem that copper diffuses into a desired material to be separated during annealing at 50 deg.C can be solved.

Abstract translation: 要解决的问题：提供对金属和电介质材料具有优异的粘合性能的金属扩散阻挡层。 解决方案：公开了一种电互连结构，其中六方相的TaN层被结合在诸如铜的第一材料和诸如Al，W和PbSn之类的第二材料和阻挡层之间。 此外，公开了六方相和α相Ta的TaN多层作为阻挡层。 可以解决铜在50℃退火时扩散到要分离的所需材料中的问题。

公开(公告)号：JP2009065207A

公开(公告)日：2009-03-26

申请号：JP2008314245

申请日：2008-12-10

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA J ,  UZOH CYPRIAN EMEKA ,  WONG KWONG-HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFREY LOUIS

IPC: H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing submicron interconnection structures for integrated circuits.
SOLUTION: A void-less and seamless conductor can be obtained by electro-plating copper (Cu) in an ordinary additive-containing bath used to plate flat, glossy, ductile, and low stress copper metal. This method capable of super-filling features without leaving voids or seams has a unique capability and is superior to any other methods. The electromigration resistance of a structure utilizing Cu electroplated by this method is superior to the electromigration resistance of an AlCu structure or a structure manufactured using copper deposited by any other method than electroplating.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造用于集成电路的亚微米互连结构的方法。

解决方案：通过在用于平板，光泽，延性和低应力铜金属的普通添加剂浴中电镀铜（Cu），可以获得无孔隙和无缝导体。 这种能够超级填充特征而不留下空隙或接缝的方法具有独特的能力并且优于任何其它方法。 利用这种方法电镀Cu的结构的电迁移电阻优于AlCu结构的电迁移电阻或使用除电镀之外的任何其它方法沉积的铜制成的结构。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JPH11204531A

公开(公告)日：1999-07-30

申请号：JP29841298

申请日：1998-10-20

Applicant: IBM

Inventor： UZOH CYPRIAN EMEKA

IPC: C23C18/31 ,  H01L21/285 ,  H01L21/288 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768 ,  H05K3/06 ,  H05K3/10

Abstract: PROBLEM TO BE SOLVED: To perform preferential removal of a plating base or a seed layer without largely etching or deforming a plated feature by attaching adequate metal by electroless plating or electric plating, removing photoresist and exposing the seed layer. SOLUTION: A thin copper seed layer 2 is sputtered on a semiconductor substrate 1. A photoresist is attached on the copper seed layer 2, and a pattern is formed. After the photoresist has been formed in the pattern, a metal 4 such as the copper undergoes electric plating or electroless plating at the opening part of the photoresist pattern. The remaining phororesists layer is removed by fusing the layer into solvent suitable for the photoresist material. The exposed seed layer is removed by an etchant, which preferentially etches the seed copper more than the metal that has been subjected to the electric plating or the electroless plating. Furthermore, the composition of this etchant can prevent the reattachment of particulates to the substrate.

公开(公告)号：SG77224A1

公开(公告)日：2000-12-19

申请号：SG1999001210

申请日：1999-03-22

Applicant: IBM

Inventor： EDELSTEIN DANIEL CHARLES ,  HARPER JAMES MCKELL EDWIN ,  KU CHAO-KUN ,  SIMONS ANDREW H ,  UZOH CYPRIAN EMEKA

IPC: H01L21/3205 ,  H01L23/52 ,  H01L21/768 ,  H01L23/532 ,  H01L23/525

Abstract: The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

公开(公告)号：AU1330897A

公开(公告)日：1998-07-15

申请号：AU1330897

申请日：1996-12-16

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DELIGIANNI HARIKLIA ,  DUKOVIC JOHN OWEN ,  HORKANS WILMA JEAN ,  UZOH CYPRIAN EMEKA ,  WONG KWONG HON ,  HU CHAO-KUN ,  EDELSTEIN DANIEL CHARLES ,  RODBELL KENNETH PARKER ,  HURD JEFFERY LOUIS

IPC: C25D7/12 ,  H01L21/28 ,  H01L21/288 ,  H01L21/768 ,  H01L23/532

Abstract: A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches.

公开(公告)号：MY121455A

公开(公告)日：2006-01-28

申请号：MYPI20005562

申请日：2000-11-28

Applicant: IBM

Inventor： WALTON ERICK GREGORY ,  UZOH CYPRIAN EMEKA ,  CHUNG DEAN S ,  COLLINS LARA SANDRA ,  CORBIN WILLIAM E ,  DELIGIANNI HARIKLIA ,  EDELSTEIN DANIEL CHARLES ,  FLUEGEL JAMES E ,  KOREJWA JOSEF WARREN ,  LOCKE PETER S

IPC: C25D5/22 ,  C25D5/06 ,  C25D17/00 ,  C25D17/14

Abstract: AA METAL PLATING APPARATUS IS DESCRIBED WHICH INCLUDES A COMPRESSIBLE MEMBER HAVING A CONDUCTIVE SURFACE COVERING SUBSTANTIALLY ALL OF THE SURFACE OF THE SUBSTRATE TO BE PLATED. THE PLATING CURRENT IS THEREBY TRANSMITTED OVER A WIDE AREA OF THE SUBSTRATE, RATHER THAN A FEW LOCALIZED CONTACT POINTS. THE COMPRESSIBLE MEMBER IS POROUS SO AS TO ABSORB THE PLATING SOLUTION AND TRANSMIT THE PLATING SOLUTION TO THE SUBSTRATE. THE WAFER AND COMPRESSIBLE MEMBER MAY ROTATE WITH RESPECT TO EACH OTHER. THE COMPRESSIBLE MEMBER MAY BE AT CATHODE POTENTIAL OR MAY BE A PASSIVE CIRCUIT ELEMENT.

公开(公告)号：DE69637333T2

公开(公告)日：2008-10-02

申请号：DE69637333

申请日：1996-06-12

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS C ,  DELIGIANNI HARIKLIA ,  HARPER JAMES MCKELL EDWIN ,  HU CHAO-KUN ,  PEARSON DALE JONATHAN ,  REYNOLDS SCOTT KEVIN ,  TU KING-NING ,  UZOH CYPRIAN EMEKA

IPC: C22C9/00 ,  H01L23/532 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.