Abstract:
This disclosure addresses providing gigabit-rate data transmission over wireless radio links, using carrier frequencies in the millimeter-wave range (> 30 GHz). More specifically, a circuit for detection of amplitude-shift keyed (ASK) or other amplitude modulations (AM) which can be easily incorporated into an integrated circuit receiver system is described, making the receiver capable of supporting both complex IQ modulation schemes and simpler, non-coherent on-off or multiple-level keying signals. Several novel radio architectures are also described which, with the addition of a frequency discriminator network, have the capability of handling frequency shift keyed (FSK) or other frequency modulations (FM), as well as AM and complex IQ modulation schemes. These radio architectures support this wide variety of modulations by efficiently sharing detector hardware components. The architecture for supporting both quadrature down-conversion and ASK/AM is described first, followed by the ASK/AM detector circuit details, then the AM-FM detector architecture, and finally the most general AM-FM/IQ demodulator system concept and the FSK/FM detector circuit details.
Abstract:
This disclosure addresses providing gigabit-rate data transmission over wireless radio links, using carrier frequencies in the millimeter-wave range (> 30 GHz). More specifically, a circuit for detection of amplitude-shift keyed (ASK) or other amplitude modulations (AM) which can be easily incorporated into an integrated circuit receiver system is described, making the receiver capable of supporting both complex IQ modulation schemes and simpler, non-coherent on-off or multiple-level keying signals. Several novel radio architectures are also described which, with the addition of a frequency discriminator network, have the capability of handling frequency shift keyed (FSK) or other frequency modulations (FM), as well as AM and complex IQ modulation schemes. These radio architectures support this wide variety of modulations by efficiently sharing detector hardware components. The architecture for supporting both quadrature down-conversion and ASK/AM is described first, followed by the ASK/AM detector circuit details, then the AM-FM detector architecture, and finally the most general AM-FM/IQ demodulator system concept and the FSK/FM detector circuit details.
Abstract:
Circuits and methods are provided for implementing highly efficient switch-mode power amplifiers using BJTs (bipolar junction transistors) as active switching devices at millimeter- wave frequencies. For example, a power amplifier circuit (100) includes an active switch device comprising a BJT (bipolar junction transistor) (Tl) and an input network (105), (106) coupled to a base of the BJT (Tl) to drive the active switch device to achieve highly efficient switch-mode (e.g., Class E) operation at millimeter wave frequencies (e.g., 60 GHz). The input network (105), (106), which may be a passive or active driver network, is designed to provide optimal driving conditions. For instance, the input network (105), (106) is designed to present a real input impedance in a range of about 7 Ohms to about 15 Ohms as seen from the base of the active switch device (Tl). Another optimal driving condition includes the input network (105), (106) being designed to provide an asymmetrical drive current to the base of the active switch device (Tl), wherein the negative peak base current exceeds the positive peak base current. Further, the input network is designed to provide an asymmetrical drive base current to the active switch device (Tl) such that the base voltage has a swing that does not exceed about 400 mVpp (millivolts peak-to-peak).
Abstract:
Systeme, Verfahren, Einheiten und Vorrichtungen, die auf Transceiver-Einheiten gerichtet sind, werden offenbart. Gemäß einem Verfahren wird eine erste Gruppe von Antennenpositionen in einem ersten Abschnitt aus einer Gruppe von Abschnitten eines Schaltungslayouts für die Schaltkreisbaugruppe ausgewählt. Das Verfahren enthält ferner Auswählen einer weiteren Gruppe von Antennenpositionen in einem weiteren Abschnitt des Schaltungslayouts, so dass eine Anordnung von ausgewählten Antennenpositionen der weiteren Gruppe von einer Anordnung von ausgewählten Antennenpositionen einer zuvor ausgewählten Gruppe von Antennenpositionen verschieden ist. Das Auswählen einer weiteren Gruppe von Positionen in einem weiteren Abschnitt wird wiederholt, bis für eine Gesamtzahl von Antennen Auswahlen getroffen wurden. Das Auswählen der weiteren Gruppe wird so ausgeführt, dass aufeinanderfolgende nicht ausgewählte Positionen in dem weiteren Abschnitt eine im Voraus festgelegte Anzahl von Positionen nicht übersteigen. Außerdem werden Antennenelemente an den ausgewählten Positionen gebildet, um die Schaltkreisbaugruppe herzustellen.
Abstract:
Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.
Abstract:
Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.
Abstract:
This invention provides a circuit means and method to replace the passive resistive or statically biased active load devices with dynamically biased active load devices. This allows the load devices to present an effective load which varies depending on the state of the circuit output. The effective load and the time rate of change of the effective load can be dynamically optimized to improve circuit performance with changing conditions. The effective load is varied according to the state of the circuit by the use of time-delayed negative feedback. The biasing of the load devices is also capable to control the logic swing of the circuit. A bias generating circuit employing a dynamically biased active load is described. This provides a means and method for a family of logic circuits, especially CML circuits, to operate at low voltage and low power at high switching speeds, having symmetrical rise and fall times and well defined logic signal swings. The output is sampled and maintained at near ideal bias voltage with a voltage follower type circuit which provides a gain of less than unit and finite delay. Particular circuit implementations using various semiconductor technologies are described and many others are possible. Although the invention may find primary use in VLSI logic circuits, especially those requiring high speed and low power, it is also shown to be useful in analog circuits. Alternate circuit configurations for dynamically biased active load devices are described.
Abstract:
There is provided a tank based oscillator. The oscillator includes one or more active devices, one or more passive devices, and a tank circuit decoupled from the active devices using at least one of the one or more passive devices. A coupling ratio between the tank circuit and the one or more active devices is set such that a maximum value of an oscillation amplitude of the tank circuit is limited based upon a breakdown of only the one or more passive devices.
Abstract:
An oscillator includes an LC tank circuit 140, active devices 131 & 132 and capacitors (passive devices) Ct and Cd. The tank circuit 140 is indirectly coupled to the active devices 131, 132 via the capacitors. The amplitude of the oscillation in the tank circuit 140 is reduced by a divider formed by capacitors Cd and Ct (see fig.2) before application to the gates of the active devices 131 & 132. The division ratio ( coupling ratio ) between the tank circuit 140 and the active devices 131, 132 allows an amplitude of oscillation in the tank circuit that would otherwise cause breakdown of the active devices. The maximum amplitude is now limited by the breakdown of the passive devices. In an embodiment, the oscillation amplitude may be 40V and the capacitive divider reduces and decouples this from the active devices which may have breakdown voltages of around 1V. The use of a high amplitude oscillation in the tank circuit gives low phase noise. It is also disclosed that the oscillation amplitude is highest and phase noise lowest if the biasing inductors 111 & 112 are tuned just below the oscillation frequency of the tank circuit 140.