公开(公告)号：FR2365135A1

公开(公告)日：1978-04-14

申请号：FR7722464

申请日：1977-07-13

Applicant: IBM

Inventor： CUOMO JEROME J ,  DISTEFANO THOMAS H ,  WOODALL JERRY M

IPC: C02F1/14 ,  F24J2/48 ,  G02B1/10 ,  F24J3/02

公开(公告)号：MX143717A

公开(公告)日：1981-06-26

申请号：MX17060677

申请日：1977-09-15

Applicant: IBM

Inventor： CUOMO JEROME J ,  DISTEFANO THOMAS H ,  WOODALL JERRY M

IPC: C02F1/14 ,  F24J2/48 ,  F24J3/02

公开(公告)号：CA1083867A

公开(公告)日：1980-08-19

申请号：CA285966

申请日：1977-09-01

Applicant: IBM

Inventor： CUOMO JEROME J ,  DISTEFANO THOMAS H ,  WOODALL JERRY M

IPC: C02F1/14 ,  F24J2/48 ,  F24J3/02 ,  G02B1/10

Abstract: PHOTON ENERGY CONVERSION Photon energy can be efficiently absorbed by a material having a reflectivity control surface region wherein the index of refraction, the thickness, and the contour of the external surface of the reflecting control surface region operate to curtail all reradiation components.

公开(公告)号：CS198175B2

公开(公告)日：1980-05-30

申请号：CS686875

申请日：1975-10-10

Applicant: IBM

Inventor： CUOMO JEROME J ,  WOODALL JERRY M ,  ZIEGLER JAMES F

IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F03G7/02

Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

公开(公告)号：CA886237A

公开(公告)日：1971-11-16

申请号：CA886237D

Applicant: IBM

Inventor： WOODALL JERRY M ,  RUPPRECHT HANS S

公开(公告)号：CA785251A

公开(公告)日：1968-05-14

申请号：CA785251D

Applicant: IBM

Inventor： WOODALL JERRY M

公开(公告)号：DE3854451T2

公开(公告)日：1996-05-02

申请号：DE3854451

申请日：1988-06-10

Applicant: IBM

Inventor： ROGERS DENNIS L ,  WOODALL JERRY M ,  PETTIT GEORGE D ,  MC INTURFF DAVID T

IPC: H01L31/09 ,  G01J1/02 ,  H01L31/00 ,  H01L31/0304 ,  H01L31/108 ,  H01L31/109 ,  H01L31/10 ,  H01L31/18

公开(公告)号：CA1180256A

公开(公告)日：1985-01-02

申请号：CA371106

申请日：1981-02-17

Applicant: IBM

Inventor： RUPPRECHT HANS S ,  WOODALL JERRY M

IPC: H01L21/265 ,  H01L21/324 ,  C30B33/00

Abstract: ANNEALING OF ION IMPLANTED III-V COMPOUNDS Thermal decomposition is reduced and stoichiometry is retained during annealing of a multiple element intermetallic semiconductor material by heating it in an environment with an excess of the most volatile constituent. In particular, a GaAs wafer is annealed with a surface into which Si has been implanted while the surface is in proximity to InAs.

公开(公告)号：CA1077812A

公开(公告)日：1980-05-20

申请号：CA282753

申请日：1977-07-14

Applicant: IBM

Inventor： VAN VECHTEN JAMES A ,  WOODALL JERRY M

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L33/00 ,  H01S5/323 ,  B01J17/34

Abstract: P-type self-compensated semiconductor materials and a process for producing them are described. The process includes imparting a region of P-type conductivity to the body of a self-compensated compound semiconductor material by the steps of preparing a crystal body of normally N-type self-compensated compound semiconductor material and bombarding said crystal body with charged particles such as beryllium ions.

公开(公告)号：CA955507A

公开(公告)日：1974-10-01

申请号：CA120465

申请日：1971-08-11

Applicant: IBM

Inventor： GRANDIA JOHANNES ,  POTEMSKI ROBERT M ,  WOODALL JERRY M

IPC: C30B19/06 ,  H01L21/208