公开(公告)号：DE2735937A1

公开(公告)日：1978-05-24

申请号：DE2735937

申请日：1977-08-10

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  WOODALL JERRY MAC PHERSON

IPC: H01L31/04 ,  H01L21/208 ,  H01L31/0693 ,  H01L31/10 ,  H01L21/20 ,  H01L31/06

Abstract: A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

公开(公告)号：DE2728711A1

公开(公告)日：1978-02-16

申请号：DE2728711

申请日：1977-06-25

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L33/00 ,  H01S5/323 ,  H01L21/26

公开(公告)号：DE3786343T2

公开(公告)日：1994-01-20

申请号：DE3786343

申请日：1987-12-08

Applicant: IBM

Inventor： KIRCHNER PETER DANIEL ,  MARKS RONALD FRANKLIN ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00 ,  H01L21/203

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.

公开(公告)号：DE3786343D1

公开(公告)日：1993-07-29

申请号：DE3786343

申请日：1987-12-08

Applicant: IBM

Inventor： KIRCHNER PETER DANIEL ,  MARKS RONALD FRANKLIN ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00 ,  H01L21/203

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.

公开(公告)号：DE3783162T2

公开(公告)日：1993-07-01

申请号：DE3783162

申请日：1987-05-26

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  MURAKAMI MASANORI ,  PRICE WILLIAM HENRY ,  TIWARI SANDIP ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L21/20 ,  H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L29/40 ,  H01L29/20

公开(公告)号：DE3372431D1

公开(公告)日：1987-08-13

申请号：DE3372431

申请日：1983-01-21

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  WOODALL JERRY MAC PHERSON

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/028 ,  H01S3/08

Abstract: Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.

公开(公告)号：FI772634A

公开(公告)日：1978-03-17

申请号：FI772634

申请日：1977-09-06

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  G02B

公开(公告)号：DE2734203A1

公开(公告)日：1978-02-16

申请号：DE2734203

申请日：1977-07-29

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19