公开(公告)号：CA2098416C

公开(公告)日：1997-05-13

申请号：CA2098416

申请日：1993-06-15

Applicant: IBM

Inventor： FREIERMUTH PETER E ,  GINN KATHLEEN S ,  HALEY JEFFREY A ,  LAMAIRE SUSAN J ,  LEWIS DAVID A ,  MILLS GAVIN T ,  REDMOND TIMOTHY A ,  TSANG YUK L ,  VAN HORN JOSEPH J ,  VIEHBECK ALFRED ,  WALKER GEORGE F ,  YANG JER-MING ,  LONG CLARENCE S

IPC: G01R31/26 ,  G01R31/28 ,  G01R31/311 ,  H01L21/265 ,  H01L21/268 ,  H01L21/326 ,  H01L21/329 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/477 ,  H01L21/479 ,  H01L21/70

Abstract: The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of rectifying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

公开(公告)号：DE3751127D1

公开(公告)日：1995-04-13

申请号：DE3751127

申请日：1987-04-28

Applicant: IBM

Inventor： GRECO STEPHEN EDWARD ,  LYONS CHRISTOPHER FRANCIS ,  YANG JER-MING

IPC: H01L21/30 ,  C08J9/26 ,  G03C1/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

公开(公告)号：DE3764032D1

公开(公告)日：1990-09-06

申请号：DE3764032

申请日：1987-05-22

Applicant: IBM

Inventor： LIN BURN JENG ,  YANG BEA-JANE LIN ,  YANG JER-MING

IPC: G03F1/00 ,  G03F1/08 ,  G03F7/11 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

Abstract: The patterned image includes on a substrate, a patterned image of a first resist material and patterned image of a second and different resist material on said first resist material. Said first material contains reactive hydrogen functional groups. The surface layer of the delineated and uncovered first resist material is reacted with a multifunctional organometallic material containing functional groups that are reactive with the functional groups of said first material. The method comprises: providing a first resist material on a substrate wherein said first material contains reactive hydrogen functional groups; providing a second and different resist material on top of said first resist material; selectively exposing said second resist material and developing said second and different resist material to form a resist mask; exposing said first resist material through the said resist mask and developing said first resist material; and reacting the surface layer of the exposed and uncovered first resist material with said organometallic material.

公开(公告)号：CA1251680A

公开(公告)日：1989-03-28

申请号：CA495659

申请日：1985-11-19

Applicant: IBM

Inventor： CHIONG KAOLIN N ,  YANG BEA-JANE L ,  YANG JER-MING

IPC: H01L21/302 ,  G03F7/26 ,  H01L21/3065

Abstract: A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.