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公开(公告)号:DE50214717D1
公开(公告)日:2010-11-25
申请号:DE50214717
申请日:2002-07-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , WEIN STEFAN , WOERNER HOLGER , THUMBS JOSEF
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公开(公告)号:DE10250538B4
公开(公告)日:2008-02-21
申请号:DE10250538
申请日:2002-10-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , STUEMPFL CHRISTIAN , WEIN STEFAN , WOERNER HOLGER
IPC: H01L25/065 , H01L21/58 , H01L21/60 , H01L23/498 , H01L23/50 , H01L23/538 , H01L25/16
Abstract: The component (1) has two ore more semiconductor chips (2,3) integrated into a circuit carrier (7) such that a mounting side (8) of the carrier is flush with an active surface (5,6) of the semiconductor chips, forming a fine wiring plane (9) with contact terminals (11) at the edges. A package (10) encloses components on a rewiring substrate (12). External contacts (18) of the electronic component are distributed on the underside of the rewiring substrate. An Independent claim is included for a panel with multiple circuit carrier positions; and for method of manufacturing an electronic component.
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公开(公告)号:DE10142119B4
公开(公告)日:2007-07-26
申请号:DE10142119
申请日:2001-08-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , THUMBS JOSEF , WEIN STEFAN , WOERNER HOLGER
IPC: H01L25/065 , H01L23/50
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公开(公告)号:DE10240461A9
公开(公告)日:2004-09-09
申请号:DE10240461
申请日:2002-08-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , WEIN STEFAN , WOERNER HOLGER
IPC: H01L23/31 , H01L23/498 , H01L23/50 , H01L21/60 , H01L25/065
Abstract: Electronic component comprises a semiconductor chip (3) having chip contacts (4) on its contact surfaces. The chip contacts are mechanically fixed on contact connecting surfaces (5) of a rewiring structure (6) and electrically connected to the rewiring structure. The rewiring structure is formed as a region of a structured metal plate or structured metal layer of a metal-laminated base plate. Independent claims are also included for the following: (1) Process for the production of an electronic component; and (2) Panel for the electronic component having a shape-stable plastic plate.
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公开(公告)号:DE10250538A1
公开(公告)日:2004-05-19
申请号:DE10250538
申请日:2002-10-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , STUEMPFL CHRISTIAN , WEIN STEFAN , WOERNER HOLGER
IPC: H01L21/60 , H01L23/498 , H01L23/538 , H01L25/065 , H01L23/50 , H01L21/58
Abstract: The component (1) has two ore more semiconductor chips (2,3) integrated into a circuit carrier (7) such that a mounting side (8) of the carrier is flush with an active surface (5,6) of the semiconductor chips, forming a fine wiring plane (9) with contact terminals (11) at the edges. A package (10) encloses components on a rewiring substrate (12). External contacts (18) of the electronic component are distributed on the underside of the rewiring substrate. An Independent claim is included for a panel with multiple circuit carrier positions; and for method of manufacturing an electronic component.
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公开(公告)号:DE10142119A1
公开(公告)日:2003-03-27
申请号:DE10142119
申请日:2001-08-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , THUMBS JOSEF , WEIN STEFAN , WOERNER HOLGER
IPC: H01L25/065 , H01L23/50
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公开(公告)号:DE10142117A1
公开(公告)日:2003-03-27
申请号:DE10142117
申请日:2001-08-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , THUMBS JOSEF , WEIN STEFAN , WOERNER HOLGER
IPC: H01L25/065 , H01L23/50
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公开(公告)号:DE10161101A1
公开(公告)日:2003-03-13
申请号:DE10161101
申请日:2001-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GOLLER BERND , HAGEN ROBERT-CHRISTIAN , OFNER GERALD , STUEMPFL CHRISTIAN , THUMBS JOSEF , WEIN STEFAN , WOERNER HOLGER , HEINDL WERNER
IPC: H01L23/14 , H01L23/373 , H01L23/498 , H01L23/32 , H01L21/60 , H01L21/98 , H01L23/50
Abstract: Electronic component comprises: (a) semiconductor chip block (1) with contact surfaces (3) with contact humps (12) on its active chip surface; and (b) intermediate support (4) formed as wiring plate with upper wiring surface (6) with conducting strips (9) and contact connecting surfaces (14) and lower wiring surface (7) with outer contact surfaces (15) electrically connected with the contact connecting surfaces. Electronic component comprises: (a) semiconductor chip block (1) with contact surfaces (3) with contact humps (12) on its active chip surface; and (b) intermediate support (4) formed as wiring plate with upper wiring surface (6) with conducting strips (9) and contact connecting surfaces (14) and lower wiring surface (7) with outer contact surfaces (15) electrically connected with the contact connecting surfaces. The heat expansion coefficient in the intermediate support is different in the upper wiring surface than in the lower wiring surface. An Independent claim is also included for a process for the production of the electronic component.
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公开(公告)号:DE102019119233B4
公开(公告)日:2021-08-26
申请号:DE102019119233
申请日:2019-07-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ABD HAMID SYAHIR , KRISHNAN JAGEN , LAM MIAN MIAN , NARAYANASAMY JAYAGANASAN , SCHNOY FABIAN , STOEK THOMAS , STUEMPFL CHRISTIAN
IPC: H01L23/36 , C25D7/12 , H01L21/50 , H01L23/495
Abstract: Verfahren zum Bilden einer Halbleitervorrichtung, aufweisend:Bereitstellen eines Halbleitergehäuses (100), das einen elektrisch isolierenden Formverbundkörper (102), einen Halbleiterchip (108), der durch den Formverbundkörper (102) eingekapselt ist, eine Vielzahl von elektrisch leitfähigen Leitungen (106), die jeweils aus dem Formverbundkörper (102) herausragen, und einen metallischen Wärmeleitblock (104) aufweist, wobei der metallische Wärmeleitblock (104) eine Rückseite (120) aufweist, die am Formverbundkörper (102) freigelegt ist;Bereitstellen eines Leiterrahmens (134), der einen Umfangsring (136) aufweist, wobei mindestens eine der Leitungen (106) physikalisch mit dem Umfangsring (136) und dem Wärmeleitblock (104) verbunden ist;Durchführung eines Elektroplattierungsprozesses an dem Halbleitergehäuse (100) zum Beschichten der äußeren Abschnitte (116) der Leitungen (106), die am Formverbundkörper (102) freigelegt sind, mit einer Metallbeschichtung (130);Aufbringen einer nichtleitenden Beschichtung (140) auf die Rückseite (120) des Wärmeleitblocks (104) vor der Durchführung des Elektroplattierungsprozesses, um zu verhindern, dass der Elektroplattierungsprozess die Metallbeschichtung (130) auf der Rückseite (120) des Wärmeleitblocks (104) abscheidet; undnach Abschluss des Beschichtens der äußeren Abschnitte (116) der Leitungen (106), Bereitstellen einer planaren metallischen Kühlkörper-Grenzfläche (132) auf der Halbleitervorrichtung, die:an dem Formverbundkörper (102) freiliegen; undfrei von der Metallbeschichtung (130) ist;wobei die planare metallische Kühlkörper-Grenzfläche (132) durch die Rückseite (120) des Wärmeleitblocks (104) bereitgestellt wird.
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公开(公告)号:DE102006046851A1
公开(公告)日:2008-04-03
申请号:DE102006046851
申请日:2006-10-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BAUER MICHAEL , STUEMPFL CHRISTIAN , HEITZER LUDWIG
IPC: H01L23/485 , H01L21/60
Abstract: The chip comprises a contact element for electrical contact of the chip (1), where the contact element is covered with an organic layer. The contact element has a contact surface (2) for a wire connection and is made of copper or a substance which is based on copper. The organic layer contains imidazole or its derivative and a nitrogen heterocycles or its derivatives. Independent claims are also included for the following: (1) an arrangement comprising chip (2) a semi conductor wafer (3) a method for manufacturing semiconductor wafer (4) a method for manufacturing chip (5) a method for contacting chip.
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