公开(公告)号：DE10156386B4

公开(公告)日：2007-08-09

申请号：DE10156386

申请日：2001-11-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER ROLAND ,  HEDLER HARRY ,  VASQUEZ BARBARA

IPC: H01L21/56 ,  H01L23/04 ,  H01L21/68 ,  H01L23/31 ,  H01L23/485

Abstract: A process for producing a semiconductor chip having contact elements protruding on one chip side within the context of wafer level packaging, the chip side provided with the contact elements being coated with a covering compound forming a protective layer, from which the protruding contact element project.

公开(公告)号：DE10297097T5

公开(公告)日：2004-12-09

申请号：DE10297097

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKOWSKY GERD ,  VASQUEZ BARBARA

IPC: G11C7/10 ,  G11C29/00

Abstract: Circuitry using fuse and anti-fuse latches (62) for selecting the number of input/output channels (98, 109) after encapsulation is disclosed. The various embodiments allow conventional bond pads (14, 16, 18) to be used for initial selection of the number of input/output channels prior to encapsulation. However, by providing different selection signals (52, 54), the number of input/output channels may be changed by the user at any time after encapsulation. Other embodiments employ "enable" latch circuits (133,135) allow the initial selection by the users at any time after encapsulation, and then at least one more subsequent selection.

公开(公告)号：DE10234951A1

公开(公告)日：2004-02-12

申请号：DE10234951

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  FRANKOWSKY GERD ,  VASQUEZ BARBARA

IPC: H01L21/60 ,  H01L21/68 ,  H01L21/98 ,  H01L23/538 ,  H01L21/58 ,  H01L25/065

Abstract: Production of a semiconductor module (31) comprises: (a) applying a structured connecting layer (11) on a supporting substrate; (b) applying active switching units (12) and/or passive switching units (13) with contact surfaces (12', 13') pointing to a transfer substrate on the structured connecting layer; (c) connecting the switching units with each other using a filler (14) between the units; (d) removing the transfer substrate; and (e) applying electrical connecting units (16) to selectively contact the contact surfaces of the switching units. An Independent claim is also included for a semiconductor module produced by the above process.

公开(公告)号：DE10153609C2

公开(公告)日：2003-10-16

申请号：DE10153609

申请日：2001-11-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  FRANKOWSKY GERD ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/98 ,  H01L25/065 ,  H01L23/538

公开(公告)号：DE10239318A1

公开(公告)日：2003-04-17

申请号：DE10239318

申请日：2002-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  RUCKMICH STEFAN ,  VASQUEZ BARBARA

IPC: H01L23/48 ,  H01L21/60 ,  H01L23/31 ,  H01L23/485 ,  H01L23/525 ,  H01L23/50

Abstract: A method for forming printed re-routing for wafer level packaging, especially chip size packaging. The method includes forming a contact layer on a semiconductor die, printing a conductive redistribution structure on the contact layer, and etching the contact layer of the die by using the conductive redistribution structure as a self-aligning mask.

公开(公告)号：DE10126296A1

公开(公告)日：2002-12-12

申请号：DE10126296

申请日：2001-05-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VASQUEZ BARBARA ,  BRINTZINGER AXEL ,  HEDLER HARRY

IPC: H01L21/48 ,  H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50

Abstract: Production of an electronic component, especially a chip, mounted on a support comprises spraying or casting an elastic material using a spray or casting mold to form elastic material sections (6) which form a contact element which is coated with a conducting layer (7). An Independent claim is also included for the electronic component produced. Preferred Features: A metallized layer is further applied. A further elastic layer is applied using the spraying or casting step.

公开(公告)号：DE10021595A1

公开(公告)日：2001-11-15

申请号：DE10021595

申请日：2000-05-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MUFF SIMON ,  HOPPE WOLFGANG ,  GALL MARTIN ,  VASQUEZ BARBARA

IPC: G11C7/10 ,  H01L23/50 ,  H01L23/525 ,  H01L25/065

Abstract: One configuration of an integrated semiconductor circuit can be selected from several possibilities. The supply and signal lines for all possibilities and one or more programming pins (1,2) lead out of the chip circuit housing (4) and the desired configuration is selected by means of a corresponding programming signal to the pins.

公开(公告)号：DE10202881B4

公开(公告)日：2007-09-20

申请号：DE10202881

申请日：2002-01-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER ROLAND ,  HEDLER HARRY ,  VASQUEZ BARBARA

IPC: H01L21/78 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/50 ,  H01L23/00

Abstract: The present invention provides a method of producing semiconductor chips (1a, 1b, 1c; 1a', 1b', 1c') with a protective chip-edge layer (21'', 22''), in particular for wafer level packaging chips, with the steps of: preparing a semiconductor wafer (1); providing trenches (21, 22) in the semiconductor wafer to establish chip edges on a first side of the semiconductor wafer (1); filling the trenches (21, 22) with a protective agent (21'; 22'); grinding back the semiconductor wafer (1) from a second side of the semiconductor wafer (1), which is opposite from the first side, to expose the trenches (21, 22) filled with the protective agent (21'; 22'); and cutting through the trenches (21, 22) filled with the protective agent (21'; 22'), so that the protective chip-edge layer (21'', 22'') comprising the protective agent (21', 22') remains on the chip edges.

公开(公告)号：DE10134011B4

公开(公告)日：2007-08-16

申请号：DE10134011

申请日：2001-07-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/50 ,  H01L23/498 ,  H05K1/02 ,  H05K3/32 ,  H05K3/34 ,  H05K3/40

公开(公告)号：DE10239081A1

公开(公告)日：2004-03-11

申请号：DE10239081

申请日：2002-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50

Abstract: The production of a semiconductor device involves applying conductor strips (11, 12) to a semiconductor substrate (10), structuring the strips, and applying a solder layer (13) to the structured strips so that the solder layer absorbs the structure of the conductor strips. An Independent claim is also included for a semiconductor device produced by the above process.