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公开(公告)号:DE102004035080A1
公开(公告)日:2005-12-29
申请号:DE102004035080
申请日:2004-07-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor: TROVARELLI OCTAVIO , BRINTZINGER AXEL , UHLENDORF INGO , RUCKMICH STEFAN , WALLIS DAVID
IPC: H01L23/12 , H01L23/522 , H01L23/528
Abstract: An arrangement reduces the electrical crosstalk on a chip, in particular between adjacent conductors of the redistribution routing and/or between the redistribution routing on the first passivation on the chip and the metallization of the chip. In one aspect, the arrangement reduces the crosstalk between the redistribution wiring on a chip and its metallization and can be realized simply and independently at the front end. This is achieved by at least an additional conductor ( 10 ) being respectively arranged between adjacent conductors of the redistribution routing ( 1 ) and/or at least a second passivation ( 7 ) with a lower dielectric constant of a preferred "cold dielectric" being arranged between the redistribution routing ( 1 ) and the first passivation ( 2 ) on the active region of the chip ( 3 ).
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公开(公告)号:DE102004041026A1
公开(公告)日:2005-11-03
申请号:DE102004041026
申请日:2004-08-25
Applicant: INFINEON TECHNOLOGIES AG
Inventor: STADT MICHAEL , RUCKMICH STEFAN
IPC: H01L21/48 , H01L21/60 , H01L23/485 , H01L23/50
Abstract: A process for producing one or more contacts (6) at one or more predetermined points, comprises filling a mould (1), containing contact cut outs, with a hardenable elastic material. The mould is applied to a substrate plate (5) so the cut-outs are located at the predetermined points. The material is then hardened and removed from the mould.
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公开(公告)号:DE10356119B3
公开(公告)日:2005-08-18
申请号:DE10356119
申请日:2003-11-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRINTZINGER AXEL , RUCKMICH STEFAN , TROVARELLI OCTAVIO
IPC: H01L21/4763 , H01L21/60 , H01L23/48 , H01L23/498 , H01L23/50 , H01L23/52 , H01L29/40
Abstract: An electronic component includes compliant elevations having electrical contact areas for contact-connecting the component to an electronic circuit. The compliant elevations are arranged on a surface of the component and the electrical contact areas are arranged on the tip of the compliant elevations. The electrical contact with the electronic circuit is embodied by means of electrical conductive tracks arranged on the surface of the component. The conductive tracks ascend on the outer surfaces of the compliant elevations to the electrical contact areas.
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公开(公告)号:DE102004023752B4
公开(公告)日:2006-08-24
申请号:DE102004023752
申请日:2004-05-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRINTZINGER AXEL , RUCKMICH STEFAN , TROVARELLI OCTAVIO
IPC: H01L21/60 , H01L21/3213 , H01L21/768
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公开(公告)号:DE102004050476B3
公开(公告)日:2006-04-06
申请号:DE102004050476
申请日:2004-10-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor: TROVARELLI OCTAVIO , BRINTZINGER AXEL , UHLENDORF INGO , RUCKMICH STEFAN , WALLIS DAVID
Abstract: Masking layers (3) are applied and structured on both sides of the substrate wafer (1), to form a first contact location (6) on the first surface (11) and a second contact location (6) on the second surface (12). A protective layer is applied to the second surface, to protect the masking and contact on that side, during the following stages. A conductor structure (7) is deposited on the first surface (11), covering the first contact location. The protective layer on the second surface is removed, and the second conductor structure (7) is applied, to cover the second contact location on the second surface (12). In a further stage, a protective layer is applied to the first surface. Application of the masking layer on the first and second surfaces comprises evaporation, immersion coating and gas phase deposition. Structuring of the masking layer is carried out by lithographic- and etching processes. The first and/or second protective layer is applied using immersion coating, spray coating or rotation coating. The first and/or second protective layers are formed from plastic film, which is adhered or laminated to the respective surface. The substrate wafer is prepared from a silicon substrate.
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公开(公告)号:DE102004023897A1
公开(公告)日:2005-12-15
申请号:DE102004023897
申请日:2004-05-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRINTZINGER AXEL , TROVARELLI OCTAVIO , WALLIS DAVID , RUCKMICH STEFAN
IPC: H01L21/288 , H01L21/768 , H01L23/31 , H01L23/528 , H01L23/532
Abstract: The method involves galvanically depositing the copper cores of the tracks and contact pads in the mask openings of a resist mask made of positive resist, then removing their edges by a further lithographic process. The copper cores are then completely enclosed with a nickel-gold layer before the positive resist mask is removed. To expose the edges, the positive resist mask is completely removed and a second negative-resist mask is created so that the copper core of the track and contact pad including a completely surrounding edge region is kept free.
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公开(公告)号:DE102004023752A1
公开(公告)日:2005-12-15
申请号:DE102004023752
申请日:2004-05-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRINTZINGER AXEL , RUCKMICH STEFAN , TROVARELLI OCTAVIO
IPC: H01L21/3213 , H01L21/60 , H01L21/768
Abstract: The method involves applying a sacrificial layer (6) to the redistribution layer (4) for protecting the copper layer (3) below during subsequent etching processes. The resist mask is removed in a lift-off step, and the seed layer is then removed by etching.
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公开(公告)号:DE10239318A1
公开(公告)日:2003-04-17
申请号:DE10239318
申请日:2002-08-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor: HEDLER HARRY , MEYER THORSTEN , RUCKMICH STEFAN , VASQUEZ BARBARA
IPC: H01L23/48 , H01L21/60 , H01L23/31 , H01L23/485 , H01L23/525 , H01L23/50
Abstract: A method for forming printed re-routing for wafer level packaging, especially chip size packaging. The method includes forming a contact layer on a semiconductor die, printing a conductive redistribution structure on the contact layer, and etching the contact layer of the die by using the conductive redistribution structure as a self-aligning mask.
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