公开(公告)号：DE10335816B4

公开(公告)日：2007-07-12

申请号：DE10335816

申请日：2003-08-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUELBER CARSTEN ,  ROESIGER MARTIN ,  ZIEBOLD RALF

IPC: H01L21/68 ,  G03F7/20 ,  G03F9/00

公开(公告)号：DE10361875A1

公开(公告)日：2005-07-21

申请号：DE10361875

申请日：2003-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFORR RAINER ,  MUELDERS THOMAS ,  CRELL CHRISTIAN ,  BAUCH LOTHAR ,  ZIEBOLD RALF ,  MOELLER HOLGER ,  GRAESER ANNETT

IPC: G03F1/00 ,  G03F1/36 ,  G03F1/14 ,  G03F1/08

Abstract: A lithography mask comprises a structure for transferring a layout onto a substrate. A blind macrostructure (1) is used to suppress scattered light, and is located at a bright region of the structure. The macrostructure is partially transparent and does not print on the substrate or form a resist structure.

公开(公告)号：DE10339786A1

公开(公告)日：2005-04-14

申请号：DE10339786

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZIEBOLD RALF ,  KUNKEL GERHARD

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

Abstract: Half-tone mask (16) projects its periodical pattern (25) onto substrate (38). It comprises transparent structure elements (22) with first transmissivity rate, first phase pitch performed by structure element on impinging light (12), and of first width (26).There are semi-transparent structure elements (24) with second transmissivity rate, different phase pitch and second width (28). Both elements are located in periodical pattern, while relevant functional products are specified. Independent claims are included for phase mask manufacture, substrate exposure using invented mask.