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    METHOD FOR THE PRODUCTION OF A PHASE MASK
    1.
    发明申请
    METHOD FOR THE PRODUCTION OF A PHASE MASK 审中-公开
    生产相片的方法

    公开(公告)号：WO2004021081A3

    公开(公告)日：2004-10-21

    申请号：PCT/DE0302739

    申请日：2003-08-14

    Applicant: INFINEON TECHNOLOGIES AG ,  HENKE WOLFGANG ,  KUNKEL GERHARD

    Inventor： HENKE WOLFGANG ,  KUNKEL GERHARD

    IPC: G02B27/14 ,  G03C5/00 ,  G03F1/00 ,  G03F9/00

    CPC classification number: G02B27/14 ,  G03C5/00 ,  G03F1/32

    Abstract: A first (20) and a second phase-shifting, semi-transparent layer (30) are formed on a substrate (10). First raised structure elements (80) on the substrate (10) with a first degree of transmission are formed therefrom by means of lithographic structuring and also second structured elements (90) with a second degree of transmission different from the first degree of transmission. Memory products with high resolution and good dimensional accuracy can be produced on a semiconductor substrate by means of transfer of the structured elements (80, 90), whereby dense structured arrangements are represented by the structured elements (90) with a high degree of transmission of over 30 % and isolated structured elements with a low density on the same mask are represented by the structured elements (80) with a low degree of transmission.

    Abstract translation: 第一（20）和第二相移半透明层（30）形成在基板（10）上。 通过光刻结构化，第一凸起结构元件（80）以第一透射率形成在基板（10）上，而第二结构元件（90）以不同于第一透射率的第二透射率形成。 存储器产品可以在结构元件（80，90）在半导体衬底上由致密的结构安排下的传输由所述结构元件具有超过30％的高透射率高分辨率和大尺寸精度（90），并在相同的掩模分离的结构组件密度来制造 由具有较低透射度的结构元件（80）表示。

    2.
    发明专利
    未知

    公开(公告)号：DE10237344A1

    公开(公告)日：2004-03-04

    申请号：DE10237344

    申请日：2002-08-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KUNKEL GERHARD ,  HENKE WOLFGANG

    IPC: G02B27/14 ,  G03C5/00 ,  G03F1/00 ,  G03F9/00 ,  G03F1/14 ,  B81C1/00

    Abstract: A first and a second phase-shifting, semitransparent layer are formed on a substrate. The layers are patterned lithographically to form first elevated structure elements on the substrate with a first degree of transmission and second structure elements with a second degree of transmission, where the second degree of transmission is different from the first degree of transmission. Memory products can be produced with high resolution and high dimensional accuracy when the structure elements are transferred to a semiconductor substrate, by virtue of dense structure arrangements being represented by the structure elements with a high degree of transmission of more than 30% and, on the same mask, isolated structure arrangements having a low density being represented by the structure elements with a lower degree of transmission.

    PHASE SHIFTING MASK
    3.
    发明申请
    PHASE SHIFTING MASK 审中-公开
    相SLIDE MASK

    公开(公告)号：WO03054627A2

    公开(公告)日：2003-07-03

    申请号：PCT/DE0204321

    申请日：2002-11-25

    Applicant: INFINEON TECHNOLOGIES AG ,  HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

    Inventor： HENNIG MARIO ,  KOEHLE RODERICK ,  KUNKEL GERHARD ,  PFORR RAINER ,  VOIGT INA

    IPC: G03F1/00 ,  G03F1/14

    CPC classification number: G03F1/30

    Abstract: The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180 DEG in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.

    Abstract translation: 在一个相位罩（8）具有对称结构（1，2）用于制备接近半导体晶片（9），在结构上的相互对置的对（5）（1”，2' ），诸如对于具有结构的存储器器件严重电容器对（1，2） 该对对180°的彼此Phasenhubunterschied内。 当躺在由透镜像差的影响的曝光系统结构的尺寸的分辨率极限降低到所得到的左右线宽差。 一种用于结构的晶片（9）的制备（1”，2' ）的过程包括选择（2）或左结构（1），这取决于线的符号宽度差的权利，相位指定的demn步骤的使用时 没有相位分配相同的成像系统被测量。

    5.
    发明专利
    未知

    公开(公告)号：DE102004031688B4

    公开(公告)日：2006-06-14

    申请号：DE102004031688

    申请日：2004-06-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KUNKEL GERHARD

    IPC: G03F7/20

    Abstract: The invention relates to a method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer. An exposure device (5) is provided, which can emit light in two polarization planes (32; 34). Through the choice of the degree of polarization, i.e., the ratio of the intensity in the first polarization plane (32) to the intensity in the second polarization plane (34), it is possible to alter the ratio of width (40) to length (42) of the resist structure (36) formed on the resist layer (14). A variation of approximately 30% with respect to dimensionally accurate imaging can thus be achieved in a simple manner.

    6.
    发明专利
    未知

    公开(公告)号：DE102004031688A1

    公开(公告)日：2006-02-09

    申请号：DE102004031688

    申请日：2004-06-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KUNKEL GERHARD

    IPC: G03F7/20

    Abstract: The invention relates to a method for adapting structure dimensions during the photolithographic projection of a pattern of structure elements onto a semiconductor wafer. An exposure device (5) is provided, which can emit light in two polarization planes (32; 34). Through the choice of the degree of polarization, i.e., the ratio of the intensity in the first polarization plane (32) to the intensity in the second polarization plane (34), it is possible to alter the ratio of width (40) to length (42) of the resist structure (36) formed on the resist layer (14). A variation of approximately 30% with respect to dimensionally accurate imaging can thus be achieved in a simple manner.

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