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1.发明专利Reflective mask, method of using the reflective mask, and method of manufacturing the reflective mask 审中-公开反射掩模，使用反射掩模的方法和制造反射掩模的方法
公开(公告)号：JP2006013494A
公开(公告)日：2006-01-12
申请号：JP2005179958
申请日：2005-06-20
Applicant: Infineon Technologies Ag , インフィネオン テクノロジーズ アクチエンゲゼルシャフト
Inventor： KAMM FRANK-MICHAEL , PFORR RAINER , CRELL CHRISTIAN
IPC: H01L21/027 , G03C5/00 , G03F1/24 , G03H1/02 , G21K5/00
CPC classification number: B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/70 , G21K2201/067
Abstract: PROBLEM TO BE SOLVED: To provide a reflective mask wherein flare effect is weakened and further the minimum thickness can be obtained, and a method of using the reflective mask.
SOLUTION: The reflective mask has a structure (20) for transferring a layout to a target substrate by using lithography. The reflective mask is particularly used in EUV lithography and further has a reflection multilayer structure (11) having at least a flare reduction layer (13') disposed partially at least on a bright field of the multilayer structure (11). Moreover, the method of using the reflective mask and the method of manufacturing the reflective mask are also provided.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供一种反射掩模，其中闪光效果被削弱，并且还可以获得最小厚度，以及使用该反射掩模的方法。 解决方案：反射掩模具有用于通过使用光刻将布局转印到目标基板的结构（20）。 反射掩模特别用于EUV光刻中，并且还具有反射多层结构（11），该反射多层结构（11）至少部分地至少设置在多层结构（11）的明场上的扩张减少层（13'）。 此外，还提供了使用反射掩模的方法和制造反射掩模的方法。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：DE10356699A1
公开(公告)日：2005-09-08
申请号：DE10356699
申请日：2003-11-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CRELL CHRISTIAN , BAUCH LOTHAR , MOELLER HOLGER , ZIEBOLD RALF
Abstract: Lithography mask having a structure for the fabrication of semiconductor components, in particular memory components, for a direction-dependent exposure device, featuring at least one auxiliary structure ( 1 ) for minimizing scattered light, the auxiliary structure ( 1 ) essentially being arranged in a low-resolution exposure direction of the direction-dependent exposure device ( 11, 11 a, 11 b) for the mask ( 10, 10 a , 10 b). A means for reducing scattered light is thus created by the auxiliary structure in a simple manner.
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公开(公告)号：DE10361875A1
公开(公告)日：2005-07-21
申请号：DE10361875
申请日：2003-12-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PFORR RAINER , MUELDERS THOMAS , CRELL CHRISTIAN , BAUCH LOTHAR , ZIEBOLD RALF , MOELLER HOLGER , GRAESER ANNETT
Abstract: A lithography mask comprises a structure for transferring a layout onto a substrate. A blind macrostructure (1) is used to suppress scattered light, and is located at a bright region of the structure. The macrostructure is partially transparent and does not print on the substrate or form a resist structure.
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公开(公告)号：DE10345525B4
公开(公告)日：2007-08-16
申请号：DE10345525
申请日：2003-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , CRELL CHRISTIAN
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公开(公告)号：DE10345467B3
公开(公告)日：2005-04-28
申请号：DE10345467
申请日：2003-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , CRELL CHRISTIAN
Abstract: The method involves providing a circuit layout (10) containing the pattern to be transferred with a first area (30) associated with a first color value characterizing an exposure, at least one second area (20) enclosing the first in at least one intermediate region (40) and associated with a different color value, dividing the first area into rectangular exposure areas (31), translating and storing the exposure areas into/in the control instruction. An auxiliary surface (50) with the second color value is inserted into the intermediate region before dividing the first area so the first area is divided into two sub-areas, one of which is rectangular so it can be filed with a rectangular exposure area in the division step.
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Patent Agency Ranking
公开(公告)号：DE10131012A1
公开(公告)日：2003-01-23
申请号：DE10131012
申请日：2001-06-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CRELL CHRISTIAN
Abstract: To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level-preferably of alternating attenuated phase shift masks-two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.
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公开(公告)号：DE102005004070B3
公开(公告)日：2006-08-03
申请号：DE102005004070
申请日：2005-01-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： NOELSCHER CHRISTOPH , VERBEEK MARTIN , CRELL CHRISTIAN
IPC: G03F1/00
Abstract: The method involves removing a defective material (40) and an absorbing material (3) of a lithographic mask in a processing zone by a focused ion beam. The mask is subjected to a cleaning process after the removal of the defective material. An absorbing material is applied in an outer region, which is dependent on a portion of the processing zone, to form a transmitting region (1) having a desired phase difference on the mask. An independent claim is also included for a lithographic mask with a transmitting region.
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公开(公告)号：DE102004031079A1
公开(公告)日：2006-01-19
申请号：DE102004031079
申请日：2004-06-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KAMM FRANK-MICHAEL , PFORR RAINER , CRELL CHRISTIAN
Abstract: A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13', 17) is at least partly arranged on a bright field of the multilayer structure (11).
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公开(公告)号：DE10345525A1
公开(公告)日：2005-05-25
申请号：DE10345525
申请日：2003-09-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HAFFNER HENNING , CRELL CHRISTIAN
Abstract: Formation of a pattern of opaque or semi-transparent structural elements on a photomask where the pattern has an edge region surrounded by transparent surface (40): preparation of a mask substrate coated with an opaque (16) and/or semitransparent layer (14) and a photosensitive layer (18), illumination of layer (18), and development of it to form a resist mask, removal of layer (18) and of further structural elements formed by dry etching to form the transparent surface.
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公开(公告)号：DE10131012C2
公开(公告)日：2003-06-26
申请号：DE10131012
申请日：2001-06-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CRELL CHRISTIAN
Abstract: To avoid charging effects of isolated chromium structures during the structuring of a second level of attenuated phase shift masks, a previous chromium etching step is preferably carried out in a time-controlled manner, so that a residual chromium layer, which is approximately 5-20 nm thick, remains at the bottom of the columns. The residual chromium layer connects the chromium webs, which are otherwise isolated, in a conductive manner and therefore dissipates the charge to the outside during the subsequent structuring by an electron beam. In the process steps that follow the exposure of the second level-preferably of alternating attenuated phase shift masks-two further chromium etching steps can be carried out, with a small etching depth in each case in the columns provided for the quartz etching of different phase shift.
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