公开(公告)号：AU2003218287A1

公开(公告)日：2003-10-13

申请号：AU2003218287

申请日：2003-03-19

Applicant: INTEL CORP

Inventor： BERLINER GUY ,  BAR-SADEH EYAL

IPC: H04R7/02 ,  G01L7/08

Abstract: A diaphragm includes a substrate having a hole and a sheet of material formed on the substrate and covering the hole. The sheet of material includes one or more corrugations that are substantially free of defects. A method of forming the diaphragm includes forming a corrugated surface free of stringers on the substrate, forming a layer of material on the corrugated surface, and processing the substrate to form the diaphragm including the layer of material.

公开(公告)号：GB2392329B

公开(公告)日：2005-03-16

申请号：GB0318456

申请日：2003-08-06

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/58

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：GB2392329A

公开(公告)日：2004-02-25

申请号：GB0318456

申请日：2003-08-06

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/17 ,  H03H9/58

Abstract: An FBAR filter 10 may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators 38 formed on the same membrane 35. Each of the film bulk acoustic resonators 38 may be formed from a common lower conductive layer which is defined to form the bottom electrode 32 of each film bulk acoustic resonator 38. A common top conductive layer may be defined to form each top electrode 36 of each film bulk acoustic resonator 38. A common piezoelectric film layer 34 that may or may not be patterned, forms a continuous or discontinuous film. The plurality of FBARs 38 may be formed over a single backside cavity.

公开(公告)号：DE60318283T2

公开(公告)日：2008-12-11

申请号：DE60318283

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：HK1060660A1

公开(公告)日：2004-08-13

申请号：HK04103550

申请日：2004-05-19

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKIY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AU2003298535A8

公开(公告)日：2004-05-04

申请号：AU2003298535

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： TRAN QUAN ,  GINSBURG EYAL ,  RAO VALLURI ,  WANG LI-PENG ,  TALALYEVSKY ALEXANDER ,  MA QING ,  BAR-SADEH EYAL ,  HECK JOHN

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.