公开(公告)号：US11528811B2

公开(公告)日：2022-12-13

申请号：US17336008

申请日：2021-06-01

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K3/18 ,  H05K5/00

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US20200236795A1

公开(公告)日：2020-07-23

申请号：US16634804

申请日：2017-09-27

Applicant: INTEL CORPORATION

Inventor： Jeremy Ecton ,  Nicholas Haehn ,  Oscar Ojeda ,  Arnab Roy ,  Timothy White ,  Suddhasattwa Nad ,  Hsin-Wei Wang

IPC: H05K3/46 ,  H05K5/00 ,  H05K3/18 ,  H01L23/498 ,  H01L21/48

Abstract: Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

公开(公告)号：US20250126814A1

公开(公告)日：2025-04-17

申请号：US18984454

申请日：2024-12-17

Applicant: Intel Corporation

Inventor： Brandon Christian Marin ,  Whitney Bryks ,  Gang Duan ,  Jeremy Ecton ,  Jason Gamba ,  Haifa Hariri ,  Sashi Shekhar Kandanur ,  Joseph Peoples ,  Srinivas Venkata Ramanuja Pietambaram ,  Mohammad Mamunur Rahman ,  Bohan Shan ,  Joshua James Stacey ,  Hiroki Tanaka ,  Jacob Ryan Vehonsky

IPC: H10D1/20 ,  H01L23/15 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass layer having a first hole and a second hole, the second hole larger than an electronic component disposed therein, a width of the electronic component larger than a width of the first hole. The example apparatus further includes a conductive material that substantially fills the first hole; and a dielectric material that substantially fills a space within the second hole surrounding the electronic component.

公开(公告)号：US20250125307A1

公开(公告)日：2025-04-17

申请号：US18985540

申请日：2024-12-18

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

公开(公告)号：US20250120102A1

公开(公告)日：2025-04-10

申请号：US18984426

申请日：2024-12-17

Applicant: Intel Corporation

Inventor： Brandon Christian Marin ,  Whitney Bryks ,  Gang Duan ,  Jeremy Ecton ,  Jason Gamba ,  Haifa Hariri ,  Sashi Shekhar Kandanur ,  Joseph Peoples ,  Srinivas Venkata Ramanuja Pietambaram ,  Mohammad Mamunur Rahman ,  Bohan Shan ,  Joshua James Stacey ,  Hiroki Tanaka ,  Jacob Ryan Vehonsky

IPC: H10D1/20 ,  H01L23/15 ,  H01L23/538 ,  H01L25/18

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass core having a first opening and a second opening spaced apart from the first opening, the second opening having a greater width than the first opening. The example apparatus further includes a conductive material adjacent a first wall of the first opening; and a dielectric material adjacent a second wall of the second opening.

公开(公告)号：US20250112162A1

公开(公告)日：2025-04-03

申请号：US18375469

申请日：2023-09-30

Applicant: Intel Corporation

Inventor： Zheng Kang ,  Tchefor Ndukum ,  Yosuke Kanaoka ,  Jeremy Ecton ,  Gang Duan ,  Jefferson Kaplan ,  Yonggang Yong Li ,  Minglu Liu ,  Brandon C. Marin ,  Bai Nie ,  Srinivas Pietambaram ,  Shriya Seshadri ,  Bohan Shan ,  Deniz Turan ,  Vishal Bhimrao Zade

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: An electronic package comprises a substrate core; one or more dielectric material layers over the substrate core and having a lower dielectric material layer, and a plurality of metallization layers comprising an upper-most metallization layer; an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer; and at least one conductive feature below and coupled to the IC die. A downwardly facing surface of the conductive feature is located on the lower dielectric material layer and defines a horizontal plane at a junction between the conductive feature and the lower dielectric material layer. The lower dielectric material layer has an upper facing surface facing in a direction of the IC die adjacent the conductive feature that is vertically offset from the horizontal plane.

公开(公告)号：US20250112124A1

公开(公告)日：2025-04-03

申请号：US18374555

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Aleksandar Aleksov ,  Leonel Arana ,  Gang Duan ,  Benjamin Duong ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon C. Marin ,  Tchefor Ndukum ,  Bai Nie ,  Srinivas Pietambaram ,  Bohan Shan ,  Matthew Tingey

IPC: H01L23/482 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

Abstract: DEEP CAVITY ARRANGEMENTS ON INTEGRATED CIRCUIT PACKAGING An electronic package, comprises a substrate core; dielectric material of one or more dielectric material layers over the substrate core, and having a plurality of metallization layers comprising an upper-most metallization layer; and an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer. The package also has a metallization pattern within the dielectric material and below the IC die; and a gap within the dielectric material and extending around the metallization pattern.

公开(公告)号：US20250105222A1

公开(公告)日：2025-03-27

申请号：US18475326

申请日：2023-09-27

Applicant: Intel Corporation

Inventor： Gang Duan ,  Yosuke Kanaoka ,  Minglu Liu ,  Srinivas V. Pietambaram ,  Brandon C. Marin ,  Bohan Shan ,  Haobo Chen ,  Benjamin T. Duong ,  Jeremy Ecton ,  Suddhasattwa Nad

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/29 ,  H01L23/538

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer including first dies in a first insulating material; a second layer on the first layer, the second layer including second dies and third dies in a second insulating material, the second dies having a first thickness, the third dies having a second thickness different than the first thickness, and the second dies and the third dies having a surface, wherein the surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways through the RDL, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways through the RDL and by interconnects.

公开(公告)号：US20240219633A1

公开(公告)日：2024-07-04

申请号：US18090258

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Brandon Marin ,  Jeremy Ecton ,  Gang Duan ,  Srinivas Pietambaram

IPC: G02B6/122 ,  G02B6/138

CPC classification number: G02B6/1221 ,  G02B6/138 ,  G02B2006/12038

Abstract: An integrated circuit (IC) module includes a photonic IC, an electrical IC, and a switchable waveguide device that, using a signal from the electrical IC, controls optical signals to or from the photonic IC. The switchable waveguide device may be formed by coupling metallization structures on both sides of, and either level with or below, a nonlinear optical material. The metallization structures may be in the photonic or electrical IC. The nonlinear optical material may be above the electrical IC in the photonic IC or on a glass substrate. The photonic and electrical ICs may be hybrid bonded or soldered together. The IC module may be coupled to a system substrate.

公开(公告)号：US20240213235A1

公开(公告)日：2024-06-27

申请号：US18089459

申请日：2022-12-27

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Srinivas Pietambaram ,  Brandon Marin ,  Jeremy Ecton ,  Gang Duan

IPC: H01L25/18 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L25/18 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/1427 ,  H01L2924/1431

Abstract: An apparatus is provided which comprises: an integrated circuit logic device, an integrated circuit power device conductively coupled with a first surface of the integrated circuit logic device, wherein the integrated circuit power device extends laterally beyond a side of the integrated circuit logic device, one or more vias adjacent the side of the integrated circuit logic device extending from contact with the integrated circuit power device to level with a second surface of the integrated circuit logic device opposite the first surface of the integrated circuit logic device, and conductive contacts on the second surface of the integrated circuit logic device. Other embodiments are also disclosed and claimed.