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公开(公告)号:US12255130B2
公开(公告)日:2025-03-18
申请号:US16884452
申请日:2020-05-27
Applicant: INTEL CORPORATION
Inventor: Hongxia Feng , Jeremy Ecton , Aleksandar Aleksov , Haobo Chen , Xiaoying Guo , Brandon C. Marin , Zhiguo Qian , Daryl Purcell , Leonel Arana , Matthew Tingey
IPC: H01L23/522 , H01L23/66
Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.
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公开(公告)号:US12224103B2
公开(公告)日:2025-02-11
申请号:US17348580
申请日:2021-06-15
Applicant: Intel Corporation
Inventor: Brandon Marin , Jeremy Ecton , Suddhasattwa Nad , Matthew Tingey , Ravindranath Mahajan , Srinivas Pietambaram
IPC: H05K1/02 , G11B5/17 , H01F17/02 , H01F27/23 , H01F27/28 , H01F27/32 , H01L21/822 , H01L23/498 , H01L25/16 , H01L25/18 , H01L27/01 , H01L27/04 , H01L27/32 , H05K3/28
Abstract: An electronic substrate may be fabricated having a dielectric material, metal pads embedded in the dielectric material with co-planar surfaces spaced less than one tenth millimeter from each other, and a metal trace embedded in the dielectric material and attached between the metal pads, wherein a surface of the metal trace is non-co-planar with the co-planar surfaces of the metal pads at a height of less than one millimeter, and wherein sides of the metal trace are angled relative to the co-planar surfaces of the metal pads. In an embodiment of the present description, an embedded angled inductor may be formed that includes the metal trace. In an embodiment, an integrated circuit package may be formed with the electronic substrate, wherein at least one integrated circuit devices may be attached to the electronic substrate. Other embodiments are disclosed and claimed.
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公开(公告)号:US20210375746A1
公开(公告)日:2021-12-02
申请号:US16884452
申请日:2020-05-27
Applicant: INTEL CORPORATION
Inventor: Hongxia Feng , Jeremy Ecton , Aleksandar Aleksov , Haobo Chen , Xiaoying Guo , Brandon C. Marin , Zhiguo Qian , Daryl Purcell , Leonel Arana , Matthew Tingey
IPC: H01L23/522 , H01L23/66
Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.
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公开(公告)号:US20210280463A1
公开(公告)日:2021-09-09
申请号:US16809905
申请日:2020-03-05
Applicant: INTEL CORPORATION
Inventor: Jeremy Ecton , Brandon C. Marin , Leonel Arana , Matthew Tingey , Oscar Ojeda , Hsin-Wei Wang , Suddhasattwa Nad , Srinivas Pietambaram , Gang Duan
IPC: H01L21/768 , H01L23/528 , H01L23/532
Abstract: A conductive route for an integrated circuit assembly may be formed using a sequence of etching and passivation steps through layers of conductive material, wherein the resulting structure may include a first route portion having a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, an etch stop structure on the first route portion, a second route portion on the etch stop layer, wherein the second route portion has a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, and a passivating layer abutting the at least one side surface of the second route portion.
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公开(公告)号:US20240203853A1
公开(公告)日:2024-06-20
申请号:US18085281
申请日:2022-12-20
Applicant: Intel Corporation
Inventor: Bohan Shan , Haobo Chen , Hongxia Feng , Julianne Troiano , Dingying Xu , Matthew Tingey , Xiaoying Guo , Srinivas Venkata Ramanuja Pietambaram , Bai Nie , Gang Duan , Bin Mu , Kyle Mcelhinny , Ashay A. Dani , Leonel R. Arana
IPC: H01L23/498 , H01L21/48 , H01L23/538
CPC classification number: H01L23/49827 , H01L21/4846 , H01L23/5384
Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a substrate, a via, a build-up layer, a top layer, and one or more dies. The substrate can include a conductor coating. The via can be connected to the conductor coating. The build-up layer can be on the substrate. The build-up layer can define a channel that the via is formed within and insulate the via during operation of the electronic device. The top layer can be interproximal to the substrate and the via. The one or more dies can be connected to the via.
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公开(公告)号:US11923312B2
公开(公告)日:2024-03-05
申请号:US16366661
申请日:2019-03-27
Applicant: Intel Corporation
Inventor: Bai Nie , Gang Duan , Srinivas Pietambaram , Jesse Jones , Yosuke Kanaoka , Hongxia Feng , Dingying Xu , Rahul Manepalli , Sameer Paital , Kristof Darmawikarta , Yonggang Li , Meizi Jiao , Chong Zhang , Matthew Tingey , Jung Kyu Han , Haobo Chen
CPC classification number: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/78 , H01L23/3121 , H01L23/5381 , H01L23/5383 , H01L23/5386 , H01L23/562 , H01L24/19 , H01L24/20 , H01L2224/214 , H01L2924/3511 , H01L2924/381
Abstract: A die assembly is disclosed. The die assembly includes a die, one or more die pads on a first surface of the die and a die attach film on the die where the die attach film includes one or more openings that expose the one or more die pads and that extend to one or more edges of the die.
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公开(公告)号:US20250112124A1
公开(公告)日:2025-04-03
申请号:US18374555
申请日:2023-09-28
Applicant: Intel Corporation
Inventor: Jeremy Ecton , Aleksandar Aleksov , Leonel Arana , Gang Duan , Benjamin Duong , Hongxia Feng , Tarek Ibrahim , Brandon C. Marin , Tchefor Ndukum , Bai Nie , Srinivas Pietambaram , Bohan Shan , Matthew Tingey
IPC: H01L23/482 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
Abstract: DEEP CAVITY ARRANGEMENTS ON INTEGRATED CIRCUIT PACKAGING An electronic package, comprises a substrate core; dielectric material of one or more dielectric material layers over the substrate core, and having a plurality of metallization layers comprising an upper-most metallization layer; and an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer. The package also has a metallization pattern within the dielectric material and below the IC die; and a gap within the dielectric material and extending around the metallization pattern.
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公开(公告)号:US11817349B2
公开(公告)日:2023-11-14
申请号:US16809905
申请日:2020-03-05
Applicant: INTEL CORPORATION
Inventor: Jeremy Ecton , Brandon C. Marin , Leonel Arana , Matthew Tingey , Oscar Ojeda , Hsin-Wei Wang , Suddhasattwa Nad , Srinivas Pietambaram , Gang Duan
IPC: H01L21/768 , H01L23/528 , H01L23/532 , H01L21/3213
CPC classification number: H01L21/76885 , H01L21/7685 , H01L21/76834 , H01L21/76852 , H01L23/528 , H01L23/53238 , H01L21/32134
Abstract: A conductive route for an integrated circuit assembly may be formed using a sequence of etching and passivation steps through layers of conductive material, wherein the resulting structure may include a first route portion having a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, an etch stop structure on the first route portion, a second route portion on the etch stop layer, wherein the second route portion has a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, and a passivating layer abutting the at least one side surface of the second route portion.
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公开(公告)号:US20220399150A1
公开(公告)日:2022-12-15
申请号:US17348580
申请日:2021-06-15
Applicant: Intel Corporation
Inventor: Brandon Marin , Jeremy Ecton , Suddhasattwa Nad , Matthew Tingey , Ravindranath Mahajan , Srinivas Pietambaram
IPC: H01F27/28 , H01L25/18 , H01L23/498 , H01F27/32
Abstract: An electronic substrate may be fabricated having a dielectric material, metal pads embedded in the dielectric material with co-planar surfaces spaced less than one tenth millimeter from each other, and a metal trace embedded in the dielectric material and attached between the metal pads, wherein a surface of the metal trace is non-co-planar with the co-planar surfaces of the metal pads at a height of less than one millimeter, and wherein sides of the metal trace are angled relative to the co-planar surfaces of the metal pads. In an embodiment of the present description, an embedded angled inductor may be formed that includes the metal trace. In an embodiment, an integrated circuit package may be formed with the electronic substrate, wherein at least one integrated circuit devices may be attached to the electronic substrate. Other embodiments are disclosed and claimed.
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