Abstract:
In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.
Abstract:
A calibration unit, system, and method for calibrating a device under test are provided. The calibration unit, system, and method use a single axis rotational unit to calibrate devices under test on a test head. The single axis rotation unit is configured to extend at an angle from a known axis. The test head can be designed in the shape of a frustum with, multiple sides. The calibration unit, system, and method can use combinations of gravitational excitation, Helmholtz coil excitation, and rotational rate excitation for calibrating the device under test. The calibration unit, system, and method can calibrate a 3 degree for freedom or higher MEMS devices.
Abstract:
An accelerometer (100) comprising a silicon wafer is etched to form a fixed portion (400), a movable portion (300), and a resilient coupling (120) between, the fixed and movable portions generally arranged in the plane of the wafer, the mass of the movable portion being concentrated on one side of the resilient coupling. One of the fixed and moveable portions of the silicon structure includes a first electrode. The other of the fixed and moveable portions includes a second electrode oriented parallel to the axis of acceleration, and an electrically-conductive layer electrically connected as a third electrode coplanar and mechanically coupled with the second electrode. The second and third electrodes are arranged in capacitive opposition to the first electrode, the capacitance between the first electrode and third electrode increasing as the movable portion moves in a direction along the axis of acceleration relative to the fixed portion and decreasing as the movable portion moves in an opposite direction. A resilient coupling retains the first and third electrodes in capacitive opposition to each other across a capacitance gap while allowing motion of the first electrode relative to the second and third electrodes in response to acceleration along an axis of acceleration perpendicular to the plane of the wafer, and resiliently restores the first electrode to an equilibrium position when the acceleration ceases. The second electrode is in opposition to a majority of the surface area of the first electrode when the electrodes are in the equilibrium position. Capacitance between the first and third electrodes is measured to obtain a measurement of acceleration along the axis.
Abstract:
In an embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam, and can have a non-linear shape. In another embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam. The isolation joint can have a first portion, a second portion, and a bridge portion between the first portion and the second portion. The first and second portions of the isolation joint can each have a seam and a void, while the bridge portion can be solid.
Abstract:
A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first, second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.
Abstract:
In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.
Abstract:
Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.
Abstract:
An accelerometer. A silicon wafer is etched to form a fixed portion, a movable portion, and a resilient coupling between, the fixed and movable portions generally arranged in the plane of the wafer, the mass of the movable portion being concentrated on one side of the resilient coupling. One of the fixed and moveable portions of the silicon structure includes a first electrode. The other of the fixed and moveable portions includes a second electrode oriented parallel to the axis of acceleration, and an electrically-conductive layer electrically connected as a third electrode coplanar and mechanically coupled with the second electrode. The second and third electrodes are arranged in capacitive opposition to the first electrode, the capacitance between the first electrode and third electrode increasing as the movable portion moves in a direction along the axis of acceleration relative to the fixed portion and decreasing as the movable portion moves in an opposite direction. A resilient coupling retains the first and third electrodes in capacitive opposition to each other across a capacitance gap while allowing motion of the first electrode relative to the second and third electrodes in response to acceleration along an axis of acceleration perpendicular to the plane of the wafer, and resiliently restores the first electrode to an equilibrium position when the acceleration ceases. The second electrode is in opposition to a majority of the surface area of the first electrode when the electrodes are in the equilibrium position. Capacitance between the first and third electrodes is measured to obtain a measurement of acceleration along the axis.