公开(公告)号：WO02054454A2

公开(公告)日：2002-07-11

申请号：PCT/US0143153

申请日：2001-11-21

Applicant: LAM RES CORP ,  O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

IPC: C23C14/06 ,  B01J19/02 ,  C23C16/02 ,  C23C16/27 ,  C23C16/44 ,  C23C30/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/00

CPC classification number: H01J37/32495 ,  B01J19/0073 ,  B01J19/02 ,  B01J2219/0231 ,  B01J2219/025 ,  C23C16/0272 ,  C23C16/27 ,  C23C16/4404 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括含金刚石的表面及其制造方法。

公开(公告)号：DE60134896D1

公开(公告)日：2008-08-28

申请号：DE60134896

申请日：2001-11-21

Applicant: LAM RES CORP

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

IPC: C23C14/06 ,  C23C16/44 ,  B01J19/02 ,  C23C16/02 ,  C23C16/27 ,  C23C30/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

公开(公告)号：AU5908600A

公开(公告)日：2001-01-31

申请号：AU5908600

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60038175D1

公开(公告)日：2008-04-10

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：SG130973A1

公开(公告)日：2007-04-26

申请号：SG2005062799

申请日：2002-03-21

Applicant: LAM RES CORP

Inventor： OAEDONNELL ROBERT J ,  DAUGHERTY JOHN E

IPC: B01J19/02 ,  C23C28/00 ,  C04B35/50 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a monolithic body of a cerium oxide containing ceramic material. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component is manufactured by preparing a slurry comprising a cerium oxide containing ceramic material, forming a green compact from the slurry in the desired shape, and sintering the green compact.

公开(公告)号：SG11201703128UA

公开(公告)日：2017-05-30

申请号：SG11201703128U

申请日：2015-10-16

Applicant: LAM RES CORP

Inventor： LEE ANDREW C ,  KELLOGG MICHAEL C ,  PENA CHRISTOPHER J ,  DAUGHERTY JOHN E

IPC: H01L21/205 ,  H01L21/02

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

公开(公告)号：DE60141250D1

公开(公告)日：2010-03-25

申请号：DE60141250

申请日：2001-11-21

Applicant: LAM RES CORP

Inventor： O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

IPC: B05D1/02 ,  B05D1/08 ,  B05D3/04 ,  C09K19/38 ,  C23C4/04 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065

Abstract: A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.

公开(公告)号：DE60141047D1

公开(公告)日：2010-02-25

申请号：DE60141047

申请日：2001-11-21

Applicant: LAM RES CORP

Inventor： O'DONNELL ROBERT J ,  CHANG CHRISTOPHER C ,  DAUGHERTY JOHN E

IPC: C23C30/00 ,  H01L21/00 ,  C23C14/08 ,  C23C16/40 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al 2 O 3 ). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

公开(公告)号：DE60038175T2

公开(公告)日：2009-03-12

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：AU2002228604A1

公开(公告)日：2002-07-16

申请号：AU2002228604

申请日：2001-11-21

Applicant: LAM RES CORP

Inventor： O'DONNELL ROBERT J ,  DAUGHERTY JOHN E ,  CHANG CHRISTOPHER C

IPC: C23C14/06 ,  B01J19/02 ,  C23C16/02 ,  C23C16/27 ,  C23C16/44 ,  C23C30/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.