Method and material for cleaning substrate
    14.
    发明专利
    Method and material for cleaning substrate 有权
    清洗基材的方法和材料

    公开(公告)号:JP2007208246A

    公开(公告)日:2007-08-16

    申请号:JP2006353539

    申请日:2006-12-28

    Abstract: PROBLEM TO BE SOLVED: To provide a cleaning agent for cleaning the surface of a wafer which is more efficient and has weak polishing effect, and to provide a method thereof.
    SOLUTION: A method of executing cleaning with a three-phase body 110 is disclosed. A substrate 112 on which particles 102 are deposited on its surface is prepared. The three-phase body provided with a solid portion 108, a liquid portion 106 and a gas portion 104 is generated. A force F is applied to the three-phase body and an interaction between the solid portion and the particles is promoted. The three-phase body is removed from the surface of the substrate together with the particles. The particles are removed together with the three-phase body by the interaction between the solid portion and the particles.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于清洁晶片表面的清洁剂,其更有效并且具有较弱的抛光效果,并提供其方法。 公开了一种用三相体110进行清洗的方法。 制备其表面上沉积有颗粒102的基板112。 产生具有固体部分108,液体部分106和气体部分104的三相体。 力F施加到三相体上,促进了固体部分和颗粒之间的相互作用。 三相体与颗粒一起从衬底的表面去除。 颗粒通过固体部分和颗粒之间的相互作用与三相体一起被去除。 版权所有(C)2007,JPO&INPIT

    METHOD AND APPARATUS FOR REMOVING A RESIDUAL ORGANIC LAYER FROM A SUBSTRATE USING REACTIVE GASES
    18.
    发明申请
    METHOD AND APPARATUS FOR REMOVING A RESIDUAL ORGANIC LAYER FROM A SUBSTRATE USING REACTIVE GASES 审中-公开
    使用反应性气体从基质中去除残留有机层的方法和设备

    公开(公告)号:WO2005006424A8

    公开(公告)日:2005-05-19

    申请号:PCT/US2004018610

    申请日:2004-06-10

    Inventor: DE LARIOS JOHN M

    CPC classification number: H01L21/31133 G03F7/423 H01L21/6708 H01L21/67086

    Abstract: A system and method for removing a layer from a substrate surface is provided. The method includes providing at least one encapsulating transport, where the encapsulating transport contains at least some reactive gas. At least one encapsulating transport is applied to the layer, and the layer is a chemically reactive layer. The encapsulating transport ruptures on the chemically reactive layer and releases the reactive gas in combination with a reaction inducing agent onto the chemically reactive layer to facilitate removal of the layer from the substrate surface. The at least one encapsulating transport is a bubble or a foam.

    Abstract translation: 提供了用于从衬底表面去除层的系统和方法。 该方法包括提供至少一个封装输送装置,其中封装输送装置包含至少一些反应气体。 至少一个封装传输被施加到该层,并且该层是化学反应层。 封装传输在化学反应层上破裂并且将反应气体与反应诱导剂结合释放到化学反应层上以促进从基底表面去除层。 至少一个封装输送器是气泡或泡沫。

    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    19.
    发明申请
    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 审中-公开
    使用多个进入晶圆表面的入口和出口来干燥半导体晶片表面的方法和设备

    公开(公告)号:WO2004030052A2

    公开(公告)日:2004-04-08

    申请号:PCT/US0331136

    申请日:2003-09-30

    Applicant: LAM RES CORP

    CPC classification number: H01L21/67051 H01L21/67028 H01L21/67034

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    Abstract translation: 提供了衬底制备系统的许多实施例之一,其包括具有头表面的头部,其中头部表面靠近衬底的表面。 该系统还包括用于通过头部将第一流体输送至基底表面的第一导管以及用于通过头部将第二流体输送至基底表面的第二导管,其中第二流体不同于第一流体 流体。 该系统还包括第三管道,用于从第一管道,第二管道和第三管道基本同时起作用的衬底表面去除第一流体和第二流体中的每一个。 在替代实施例中,提供了一种用于处理基板的方法,其包括在基板的表面上产生流体弯月面并且将声能施加到流体弯月面。 该方法还包括将流体弯月面移动到衬底的表面上以处理衬底的表面。

    Apparatus for depositing and planarizing thin film of semiconductor wafer
    20.
    发明专利
    Apparatus for depositing and planarizing thin film of semiconductor wafer 审中-公开
    用于沉积和平面化半导体薄膜薄膜的装置

    公开(公告)号:JP2010216015A

    公开(公告)日:2010-09-30

    申请号:JP2010066565

    申请日:2010-03-23

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method relating to deposition and planarization of a semiconductor wafer, more particularly, for more effectively depositing a thin film using a localized deposition and for enabling localized planarization. SOLUTION: A proximity head 102 that can be charged as an anode is placed in close proximity to the surface of a wafer 104. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. While the proximity head proceeds in a direction 120 across the wafer, a deposited layer 108 is formed over a seed layer 106. The deposited layer is formed by way of an electrochemical reaction facilitated by an electrolyte 110 contained in a meniscus 116 that is defined between the proximity head and the seed layer. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种与半导体晶片的沉积和平坦化相关的装置和方法,更具体地说,是为了更有效地使用局部沉积沉积薄膜并实现局部平坦化。 解决方案:可以作为阳极充电的接近头部102被放置在紧邻晶片104的表面。电镀液体设置在晶片和邻近头部之间以产生局部金属电镀。 当接近头沿晶片方向120进行时,沉积层108形成在晶种层106上方。沉积层通过包含在弯液面116中的电解质110促进的电化学反应形成,该电解质110定义在 邻近头和种子层。 版权所有(C)2010,JPO&INPIT

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