Abstract:
One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.
Abstract:
A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and technique for more effectively depositing a thin film by using localized deposition and permitting localized planarization, in particular, relating to the deposition and planarization of a semiconductor wafer. SOLUTION: An electroplating apparatus 100 for depositing a metal layer 108 on the surface of the wafer 104 is provided. In one embodiment, a proximity head 102 which can be charged as an anode is placed in close proximity to the surface of the wafer 104. A plating fluid 116 is provided between the wafer 104 and the proximity head 102 to form a localized metal plating part 108. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a cleaning agent for cleaning the surface of a wafer which is more efficient and has weak polishing effect, and to provide a method thereof. SOLUTION: A method of executing cleaning with a three-phase body 110 is disclosed. A substrate 112 on which particles 102 are deposited on its surface is prepared. The three-phase body provided with a solid portion 108, a liquid portion 106 and a gas portion 104 is generated. A force F is applied to the three-phase body and an interaction between the solid portion and the particles is promoted. The three-phase body is removed from the surface of the substrate together with the particles. The particles are removed together with the three-phase body by the interaction between the solid portion and the particles. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of. solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.
Abstract:
A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.
Abstract:
A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.
Abstract:
A system and method for removing a layer from a substrate surface is provided. The method includes providing at least one encapsulating transport, where the encapsulating transport contains at least some reactive gas. At least one encapsulating transport is applied to the layer, and the layer is a chemically reactive layer. The encapsulating transport ruptures on the chemically reactive layer and releases the reactive gas in combination with a reaction inducing agent onto the chemically reactive layer to facilitate removal of the layer from the substrate surface. The at least one encapsulating transport is a bubble or a foam.
Abstract:
One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and a method relating to deposition and planarization of a semiconductor wafer, more particularly, for more effectively depositing a thin film using a localized deposition and for enabling localized planarization. SOLUTION: A proximity head 102 that can be charged as an anode is placed in close proximity to the surface of a wafer 104. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. While the proximity head proceeds in a direction 120 across the wafer, a deposited layer 108 is formed over a seed layer 106. The deposited layer is formed by way of an electrochemical reaction facilitated by an electrolyte 110 contained in a meniscus 116 that is defined between the proximity head and the seed layer. COPYRIGHT: (C)2010,JPO&INPIT