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    11.
    发明专利
    未知

    公开(公告)号：DE60313861D1

    公开(公告)日：2007-06-28

    申请号：DE60313861

    申请日：2003-03-25

    Applicant: LAM RES CORP

    Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

    IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

    Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

    13.
    发明专利
    未知

    公开(公告)号：AT453206T

    公开(公告)日：2010-01-15

    申请号：AT01979979

    申请日：2001-10-10

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

    IPC: H01J37/32 ,  H01L21/3065

    Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN
    15.
    发明专利
    PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN 未知

    公开(公告)号：SG145568A1

    公开(公告)日：2008-09-29

    申请号：SG2006086862

    申请日：2003-06-13

    Applicant: LAM RES CORP

    Inventor： EPPLER AARON ,  SRINIVASAN MUKUND ,  CHEBI ROBERT

    IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

    Abstract: PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS USING ETCH GAS WITH FLUOROCARBON AND HYDROGEN A process of etching openings in a dielectric layer includes supporting a semiconductor substrate (720) in a plasma etch reactor (700), the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor (700) an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x>=1, y>=l, and z>=0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x>=1 and y>=4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and, plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

    16.
    发明专利
    未知

    公开(公告)号：DE60313861T2

    公开(公告)日：2008-01-17

    申请号：DE60313861

    申请日：2003-03-25

    Applicant: LAM RES CORP

    Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

    IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

    Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

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