公开(公告)号：AT362652T

公开(公告)日：2007-06-15

申请号：AT03728281

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：DE60313861T2

公开(公告)日：2008-01-17

申请号：DE60313861

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：DE60313861D1

公开(公告)日：2007-06-28

申请号：DE60313861

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/00 ,  H01L21/311 ,  H01L21/68 ,  H01L21/683 ,  H01L21/768

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：AU2003233432A1

公开(公告)日：2003-10-20

申请号：AU2003233432

申请日：2003-03-25

Applicant: LAM RES CORP

Inventor： LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON ,  KAMP TOM A ,  GOTTSCHO RICHARD

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768 ,  H01L21/324 ,  H01L21/68

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

公开(公告)号：AU2002248539A1

公开(公告)日：2002-10-15

申请号：AU2002248539

申请日：2002-03-21

Applicant: LAM RES CORP

Inventor： LEE CHRIS ,  CHIANG CONAN ,  NI TUQIANG ,  LIN FRANK Y ,  LEE DAI N ,  JIANG WEINAN

IPC: H01L21/28 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/027

Abstract: A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.