公开(公告)号：SG183839A1

公开(公告)日：2012-10-30

申请号：SG2012064481

申请日：2011-02-28

Applicant: LAM RES CORP

Inventor： ASO TSUYOSHI ,  RUSU CAMELIA

Abstract: A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises providing a flow of sidewall inorganic deposition phase gas comprising a silicon containing compound gas and at least one of oxygen, nitrogen or NOx, into the plasma processing chamber, forming a plasma from the sidewall deposition phase gas in the plasma processing chamber, and stopping the flow of the sidewall deposition gas into the plasma processing chamber. The etch phase comprises, providing a flow of an etching gas comprising a halogen component, forming a plasma from the etching gas in the plasma processing chamber, and stopping the flow of the etching gas.

公开(公告)号：IL173861A

公开(公告)日：2010-11-30

申请号：IL17386106

申请日：2006-02-21

Applicant: LI LUMIN ,  LAM RES CORP ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

Inventor： LI LUMIN ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：AT543204T

公开(公告)日：2012-02-15

申请号：AT04780271

申请日：2004-08-06

Applicant: LAM RES CORP

Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: H01L21/00 ,  B23B3/10 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：SG130195A1

公开(公告)日：2007-03-20

申请号：SG2007009798

申请日：2004-08-06

Applicant: LAM RES CORP

Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC A ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is place (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).

公开(公告)号：SG195296A1

公开(公告)日：2013-12-30

申请号：SG2013089719

申请日：2012-05-30

Applicant: LAM RES CORP

Inventor： XU QING ,  RUSU CAMELIA ,  MCMILLIN BRIAN K ,  PATERSON ALEXANDER M

Abstract: A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.

公开(公告)号：IL205779A

公开(公告)日：2011-08-31

申请号：IL20577910

申请日：2010-05-13

Applicant: LI LUMIN ,  LAM RES CORP ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

Inventor： LI LUMIN ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.