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    METHOD OF MAKING AN INP-BASED DEVICE COMPRISING SEMICONDUCTOR GROWTH ON A NON-PLANAR SURFACE
    14.
    发明专利
    METHOD OF MAKING AN INP-BASED DEVICE COMPRISING SEMICONDUCTOR GROWTH ON A NON-PLANAR SURFACE 未知

    公开(公告)号：CA2200124C

    公开(公告)日：2000-04-18

    申请号：CA2200124

    申请日：1997-03-17

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BAILLARGEON JAMES N ,  CHU SUNG-NEE GEORGE ,  HWANG WEN-YEN ,  CHO ALFRED YI

    IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S3/18

    Abstract: Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface (11) of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.

    18.
    发明专利
    未知

    公开(公告)号：DE60007959T2

    公开(公告)日：2004-12-23

    申请号：DE60007959

    申请日：2000-09-04

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  KOEHLER RUEDEGER ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01S5/125 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/30

    Abstract: An article comprising a QC-DFB laser is disclosed. In the QC-DFB laser (10), an overlying grating structure achieves relatively strong coupling of the guided mode to the grating, and is thus highly effective in inducing single-mode operation even under cw operating conditions. The grating structure includes grooves (25) etched in a plasmon-enhanced confinement layer (PECL) (22) disposed adjacent and in contact with an upper metallic electrode (23). The grating structure and the PECL (22) are designed such that in the grooves (25), the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, the effective refractive index.

    20.
    发明专利
    未知

    公开(公告)号：DE69903200D1

    公开(公告)日：2002-11-07

    申请号：DE69903200

    申请日：1999-01-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34

    Abstract: A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a1 and a2, respectively. The first material is selected such that a1 > ao, where ao is the lattice constant of the substrate (typically InP), and the second material is selected such that a 2 ao. The materials are also selected such that the conduction band discontinuity DELTA Ec between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 mu m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

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