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    SEMICONDUCTOR LASER DEVICE
    11.
    发明专利
    SEMICONDUCTOR LASER DEVICE 失效

    公开(公告)号：JPH09135052A

    公开(公告)日：1997-05-20

    申请号：JP22813796

    申请日：1996-08-29

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TAKAYAMA TORU ,  KONDO OSAMU ,  YURI MASAAKI ,  KUME MASAHIRO ,  YOSHIKAWA AKIO

    IPC: H01S5/223 ,  H01S5/065 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device, which is to be used as a light source for an optical disc, with a small astigmatic difference, low noise and stable horizontal mode from low power to high power. SOLUTION: On an N-type semiconductor substrate 51, a buffer layer 52 composed of an N-type semiconductor layer, a clad layer 53 composed of an N-type semiconductor layer and an active layer 54 are successively formed. On the active layer 54, a first light guide layer 55, which is composed of a P-type semiconductor layer that has a loss changing layer 55a composed of a P-type semiconductor layer which has a smaller forbidden band width than that of the active layer 54, and a second light guide layer 56 composed of a P-type semiconductor layer are successively formed. On the second light guide layer 56, a third light guide layer 57a composed of a stripe-shaped P-type semiconductor layer is formed, and on the both sides of the third light guide layer 57a on the second light guide layer 56, a transparent current block layer 57 is formed against the laser beams oscillated by the active layer 54 composed of an N-type semiconductor layer.

    SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE
    12.
    发明专利
    SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JPH0443695A

    公开(公告)日：1992-02-13

    申请号：JP15206190

    申请日：1990-06-11

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI

    IPC: H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042

    Abstract: PURPOSE:To obtain a NAM-type semiconductor laser device which is provided with a NAM region of a small loss and whose reliability is high by a method wherein a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer are laminated sequentially on a first semiconductor layer, an etching-prevention film is formed, a laminated body composed of the second, third and fourth semiconductor layers is formed to be an inverted mesa shape as well as a fifth semiconductor layer, a sixth semiconductor layer and a seventh semiconductor layer are crystal-grown sequentially on its exposed face. CONSTITUTION:A second semiconductor layer 2 composed of a clad layer, a third semiconductor layer 3 composed of an active layer, a fourth semiconductor layer 4 composed of a clad layer and a cap layer 5 are formed sequentially on a first semiconductor layer 1; a silicon nitride film 6 for etching-prevention use is formed in a region other than a NAM (nonabsorption mirror) region; the second, third and fourth semiconductor layers and the cap layer 5 are removed; an inverted mesa is formed and this part is exposed. Then, while the silicon nitride film 6 for etching-prevention use is applied as it is, a second crystal growth operation is executed; a fifth semiconductor layer 7 composed of a clad layer, a sixth semiconductor layer 8 whose Al composition ratio value is larger than that of the third semiconductor layer; a seventh semiconductor layer 9 composed of a clad layer and a cap layer 10 are formed sequentially.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    15.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2000216164A

    公开(公告)日：2000-08-04

    申请号：JP24425799

    申请日：1999-08-31

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ORITA KENJI ,  ISHIDA MASAHIRO ,  NAKAMURA SHINJI ,  YURI MASAAKI

    IPC: H01L21/205 ,  H01L21/22 ,  H01L21/285 ,  H01L21/324 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To enable reliable obtainment of a P type layer having a low resistance in a short time from a semiconductor layer of group III nitride while avoiding generation of defects in the semiconductor layer. SOLUTION: An N type contact layer 13 of GaN, an N type cladding layer 14 of AlGaN, an active layer 15 of InGaN, a first Mg-doped layer 16A of AlGaN and a second Mg-doped layer 17A of GaN are first sequentially grown on a substrate 11 of sapphire. Thereafter the substrate having the second Mg-doped layer 17a formed thereon is exposed to nitrogen plasma for 40 minutes. As a result, Mg atoms as acceptors doped in the first and second Mg-doped layers 16A and 17A are activated so that the P type cladding layer 16B and P type contact layer 17B can be obtained having a low resistance and a good crystallization respectively.

    LIGHT EMITTING SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
    16.
    发明专利
    LIGHT EMITTING SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JP2000151022A

    公开(公告)日：2000-05-30

    申请号：JP25495099

    申请日：1999-09-08

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NAKAMURA SHINJI ,  ISHIDA MASAHIRO ,  YURI MASAAKI ,  KONDO OSAMU ,  ORITA KENJI

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To reduce a wave guide loss, by providing a substrate, an emitting layer, a semiconductor layer made of a first third family nitride crystal of a hexagonal crystal and a clad layer made of a second third family nitride crystal formed on the semiconductor layer, and by forming a trench having a stripe shape in a specified direction on the semiconductor layer. SOLUTION: A buffer layer 2 and an n-side contact layer 3 are orderly formed on a substrate 1. An n-side clad layer 4 is formed at a part of the n-side clad layer 3. Additionally a light emitting layer 5, a first p-side clad layer 6 and an n-type current obstructing layer (semiconductor layer) 7 are orderly formed on the n-side clad layer 4. A trench 7a having a stripe shape with a port width of about 1.5 7 μm which reaches the first p-side clad layer 6 is provided in order to transmit a current in a narrow region on the n-type current obstructing layer. The trench 7a is formed in the direction of of the current obstructing layer 7. In this case the side surface of the trench 7a has an inclination of 135 degree corresponding to the bottom surface of the trench 7a.

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURE
    18.
    发明专利
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURE 失效

    公开(公告)号：JPH11340507A

    公开(公告)日：1999-12-10

    申请号：JP14386598

    申请日：1998-05-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： HASHIMOTO TADAAKI ,  YURI MASAAKI ,  KONDO OSAMU ,  ISHIDA MASAHIRO

    IPC: H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To eliminate the chipping of a semiconductor light-emitting element, which occurs when the element is split from a substrate. SOLUTION: A semiconductor light-emitting element is constituted by successively laminating an n-type GaN layer 4, a p-type GaN layer 5, and a positive electrode 6 all of which have the same shape on the main surface of an n-type GaN substrate 3 having an equilateral triangular surface composed of the (0001)-face of the crystal from which the substrate 3 is made and side faces respectively composed of the (-1010)-face, (01-10)-face and (1-100)-face of the crystal. Therefore, the splitting direction of the element from the substrate 3 can be set along the cleavage plane of the crystal and the chipping of the light-emitting element, which occurs when the element is split from the substrate 3, can be eliminated.

    MANUFACTURE OF NITRIDE COMPOUND SEMICONDUCTOR
    19.
    发明专利
    MANUFACTURE OF NITRIDE COMPOUND SEMICONDUCTOR 失效

    公开(公告)号：JPH11307458A

    公开(公告)日：1999-11-05

    申请号：JP11315998

    申请日：1998-04-23

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIDA MASAHIRO ,  YURI MASAAKI ,  KONDO OSAMU ,  HASHIMOTO TADAAKI

    IPC: H01L29/12 ,  H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To eliminate the need for an annealing process after formation of a P-type nitride compound semiconductor and realize a manufacturing method of a P-type nitride compound semiconductor of low resistance. SOLUTION: The method has a first formation process for forming a P-type nitride compound semiconductor layer by supplying raw material with group III atom, raw material with nitrogen atom and doping raw material into a furnace, a stoppage process for temporarily stopping supply of the three kinds of raw materials into a furnace and a second formation process for forming a P-type nitride compound semiconductor layer by supplying the three kinds of raw materials into a furnace again.

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