公开(公告)号：AU2011285791A1

公开(公告)日：2013-02-28

申请号：AU2011285791

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C11/16 ,  G11C17/02 ,  G11C17/16

Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：WO2012018918A3

公开(公告)日：2012-05-31

申请号：PCT/US2011046429

申请日：2011-08-03

Applicant: QUALCOMM INC ,  RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

CPC classification number: G11C11/16 ,  G11C11/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C17/02 ,  G11C17/16 ,  G11C29/027

Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

Abstract translation: 在具有第一磁性隧道结（MTJ）和第二MTJ的位单元处产生不可逆状态的方法包括将编程电压施加到位单元的第一MTJ，而不将编程电压施加到位单元的第二MTJ。 存储器设备（102）包括具有第一MTJ（106）和第二MTJ（108）和编程环绕（104）的比特单元，其被配置为通过将程序信号施加到所选择的一个中的所选择的一个来生成位单元的不可逆状态 第一个MTJ和该位单元的第二个MTJ。