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公开(公告)号：JP2015092430A
公开(公告)日：2015-05-14
申请号：JP2014254895
申请日：2014-12-17
Applicant: QUALCOMM INC
Inventor： HARI M RAO , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , XIA LI , WAH NAM HSU , HAO WUYANG , SUH JUNGWON , NICHOLAS K YU , MATTHEW MICHAEL NOWAK , STEVEN M MILLENDORF , ASAF ASHKENAZI
IPC: G11C17/14 , G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105
Abstract: 【課題】プログラミングの前にビットセルの動作を試験することが可能であり、かつビットセルのプログラムされた状態を視覚的に検出することが困難なメモリを提供すること。【解決手段】第1の磁気トンネル接合構造(MTJ)と第2のMTJとを有するビットセルにおいて非可逆状態を生成する方法は、ビットセルの第1のMTJに、ビットセルの第2のMTJにプログラム電圧を印加せずにプログラム電圧を印加することを含む。メモリデバイスは、第1のMTJおよび第2のMTJを有するビットセルと、ビットセルの第1のMTJおよび第2のMTJの選択された一方にプログラム信号を印加することによってビットセルにおいて非可逆状態を生成するように構成されたプログラミング回路とを含む。【選択図】図1
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公开(公告)号：ES2718487T3
公开(公告)日：2019-07-02
申请号：ES11752672
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
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公开(公告)号：SG187688A1
公开(公告)日：2013-03-28
申请号：SG2013008131
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
Abstract: A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
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公开(公告)号：AR082475A1
公开(公告)日：2012-12-12
申请号：ARP110102812
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
Abstract: Un método para generar un estado no reversible en una celda de bits con un primer empalme de túnel magnético (MTJ) y un segundo MTJ incluye aplicar un voltaje programado al primer MTJ de la celda de bits sin aplicar el voltaje programado al segundo MTJ de la celda de bits. Un dispositivo de memoria incluye una celda de bits con un primer MTJ y un segundo MTJ y sistemas de circuitos de programación configurados para generar un estado no reversible en la celda de bits al aplicar una señal programada a uno seleccionado del primer MTJ o del segundo MTJ de la celda de bits.
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公开(公告)号：BR112013002528A2
公开(公告)日：2016-05-31
申请号：BR112013002528
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： ASHKENAZI ASAF , RAO HARI M , KIM JUNG PILL , SUH JUNGWON , LEE KANGHO , NOWAK MATTHEW MICHAEL , YU NICHOLAS K , KANG SEUNG H , MILLENDORF STEVEN M , KIM TAE HYUN , HAO WUYANG , HSU WAH NAM , LI XIA , ZHU XIAOCHUN
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Patent Agency Ranking
公开(公告)号：CA2807392C
公开(公告)日：2014-12-16
申请号：CA2807392
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
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公开(公告)号：AU2011285791A1
公开(公告)日：2013-02-28
申请号：AU2011285791
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
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公开(公告)号：HUE043517T2
公开(公告)日：2019-08-28
申请号：HUE11752672
申请日：2011-08-03
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
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公开(公告)号：IN318MUN2013A
公开(公告)日：2015-05-29
申请号：IN318MUN2013
申请日：2013-02-18
Applicant: QUALCOMM INC
Inventor： RAO HARI M , KIM JUNG PILL , KANG SEUNG H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M , ASHKENAZI ASAF
Abstract: A method of generating a non reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
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公开(公告)号：HK1181916A1
公开(公告)日：2013-11-15
申请号：HK13109043
申请日：2013-08-02
Applicant: QUALCOMM INC
Inventor： RAO HARI M M , KIM JUNG PILL , KANG SEUNG H H , ZHU XIAOCHUN , KIM TAE HYUN , LEE KANGHO , LI XIA , HSU WAH NAM , HAO WUYANG , SUH JUNGWON , YU NICHOLAS K K , NOWAK MATTHEW MICHAEL , MILLENDORF STEVEN M M , ASHKENAZI ASAF
IPC: G11C20060101
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