公开(公告)号：AR082475A1

公开(公告)日：2012-12-12

申请号：ARP110102812

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C11/16 ,  G11C17/02 ,  G11C17/16

Abstract: Un método para generar un estado no reversible en una celda de bits con un primer empalme de túnel magnético (MTJ) y un segundo MTJ incluye aplicar un voltaje programado al primer MTJ de la celda de bits sin aplicar el voltaje programado al segundo MTJ de la celda de bits. Un dispositivo de memoria incluye una celda de bits con un primer MTJ y un segundo MTJ y sistemas de circuitos de programación configurados para generar un estado no reversible en la celda de bits al aplicar una señal programada a uno seleccionado del primer MTJ o del segundo MTJ de la celda de bits.

公开(公告)号：ES2718487T3

公开(公告)日：2019-07-02

申请号：ES11752672

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

公开(公告)号：SG187688A1

公开(公告)日：2013-03-28

申请号：SG2013008131

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

Abstract: A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：BR112013002528A2

公开(公告)日：2016-05-31

申请号：BR112013002528

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： ASHKENAZI ASAF ,  RAO HARI M ,  KIM JUNG PILL ,  SUH JUNGWON ,  LEE KANGHO ,  NOWAK MATTHEW MICHAEL ,  YU NICHOLAS K ,  KANG SEUNG H ,  MILLENDORF STEVEN M ,  KIM TAE HYUN ,  HAO WUYANG ,  HSU WAH NAM ,  LI XIA ,  ZHU XIAOCHUN

IPC: G11C11/16 ,  G11C17/02 ,  G11C17/16

公开(公告)号：CA2807392C

公开(公告)日：2014-12-16

申请号：CA2807392

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：AU2011285791A1

公开(公告)日：2013-02-28

申请号：AU2011285791

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C11/16 ,  G11C17/02 ,  G11C17/16

Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：HUE043517T2

公开(公告)日：2019-08-28

申请号：HUE11752672

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

公开(公告)号：IN318MUN2013A

公开(公告)日：2015-05-29

申请号：IN318MUN2013

申请日：2013-02-18

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

Abstract: A method of generating a non reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：CA2807392A1

公开(公告)日：2012-02-09

申请号：CA2807392

申请日：2011-08-03

Applicant: QUALCOMM INC

Inventor： RAO HARI M ,  KIM JUNG PILL ,  KANG SEUNG H ,  ZHU XIAOCHUN ,  KIM TAE HYUN ,  LEE KANGHO ,  LI XIA ,  HSU WAH NAM ,  HAO WUYANG ,  SUH JUNGWON ,  YU NICHOLAS K ,  NOWAK MATTHEW MICHAEL ,  MILLENDORF STEVEN M ,  ASHKENAZI ASAF

IPC: G11C17/16 ,  G11C11/16 ,  G11C17/02

Abstract: A method of generating a non - reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device (102) includes a bitcell having a first MTJ (106) and a second MTJ (108) and programming circitry (104) configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.

公开(公告)号：WO2015023368A3

公开(公告)日：2015-04-16

申请号：PCT/US2014045609

申请日：2014-07-07

Applicant: QUALCOMM INC

Inventor： MILLENDORF STEVEN M ,  MCDONALD CAMERON A

IPC: H04L9/00 ,  H04L9/06

CPC classification number: H04L9/0637 ,  H04L9/003 ,  H04L9/0631 ,  H04L2209/24

Abstract: A method herein is for encryption key update in a station. In the method, a first data block is encrypted using a first plurality of round keys over a first plurality of rounds to generate a first encrypted data block, wherein the first plurality of round keys are generated based on an initial block key. A round key of the first plurality of round keys is retained for use as a basis for a first derived block key. A second data block is encrypted using a second plurality of round keys over a second plurality of rounds to generate a second encrypted data block, wherein the second plurality of round keys are generated based on the first derived block key. A round key of the second plurality of round keys may be retained for use as a basis for a second derived block key.

Abstract translation: 此处的方法用于站中的加密密钥更新。 在该方法中，第一数据块在第一多轮中使用第一多个轮回密钥加密以生成第一加密数据块，其中基于初始块密钥生成第一多个轮回密钥。 第一多个轮密钥的循环密钥被保留以用作第一导出块密钥的基础。 使用第二多个循环密钥在第二多个循环上对第二数据块进行加密以生成第二加密数据块，其中基于第一导出块密钥生成第二多个循环密钥。 第二多个轮密钥中的轮密钥可被保留以用作第二派生块密钥的基础。