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    MICROELECTRONIC PROCESSING COMPONENT HAVING A CORROSION-RESISTANT LAYER, MICROELECTRONIC WORKPIECE PROCESSING APPARATUS INCORPORATING SAME, AND METHOD OF FORMING AN ARTICLE HAVING THE CORROSION-RESISTANT LAYER
    11.
    发明申请
    MICROELECTRONIC PROCESSING COMPONENT HAVING A CORROSION-RESISTANT LAYER, MICROELECTRONIC WORKPIECE PROCESSING APPARATUS INCORPORATING SAME, AND METHOD OF FORMING AN ARTICLE HAVING THE CORROSION-RESISTANT LAYER 审中-公开
    具有耐腐蚀层的微电子加工组件，与其相容的微电子工件加工设备及形成具有耐腐蚀层的物品的方法

    公开(公告)号：WO2011049938A3

    公开(公告)日：2011-08-04

    申请号：PCT/US2010053176

    申请日：2010-10-19

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： SIMPSON MATTHEW A

    IPC: H01L21/3065 ,  H01L21/31

    CPC classification number: C23C4/02 ,  C23C4/12 ,  H01J37/32458 ,  H01J37/32477 ,  H01L21/67109 ,  H01L21/6831 ,  Y10T428/24967 ,  Y10T428/249961 ,  Y10T428/24997

    Abstract: A microelectronic processing component can include a substrate and a corrosion-resistant layer. The substrate can include a metal-containing material, and the corrosion-resistant layer can be adjacent to the surface region. The corrosion-resistant layer can include a first portion and a second portion each including a rare earth compound, wherein the first portion is disposed between the substrate and the second portion, and the first portion has a first porosity, and the second portion has a second porosity that is greater than the first porosity. The component can be component within a processing apparatus used to process microelectronic work pieces. In a particular embodiment, the component can be exposed to the processing conditions as seen by the microelectronic workpiece when fabrication a microelectronic device from the microelectronic workpiece. Methods can be used to achieve the difference in porosity, and such methods can be for articles other than microelectronic processing components.

    Abstract translation: 微电子处理部件可以包括基板和耐腐蚀层。 基板可以包括含金属的材料，并且耐腐蚀层可以与表面区域相邻。 耐腐蚀层可以包括第一部分和第二部分，每个部分包括稀土化合物，其中第一部分设置在基板和第二部分之间，第一部分具有第一孔隙，第二部分具有第一部分 第二孔隙率大于第一孔隙度。 组件可以是用于处理微电子工件的处理设备内的组件。 在特定实施例中，当从微电子工件制造微电子器件时，组件可以暴露于微电子工件所看到的处理条件。 可以使用方法来实现孔隙度的差异，并且这种方法可以用于微电子处理部件以外的物品。

    SEALED PLASMA COATINGS
    12.
    发明申请
    SEALED PLASMA COATINGS 审中-公开
    密封等离子体涂料

    公开(公告)号：WO2010147856A3

    公开(公告)日：2011-02-24

    申请号：PCT/US2010038342

    申请日：2010-06-11

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： VARTABEDIAN ARA ,  ABOUAF MARC ,  INTO STEPHEN W ,  SIMPSON MATTHEW A

    IPC: H01L21/02 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: C23C4/18 ,  C23C28/042 ,  C23C28/321 ,  C23C28/322 ,  C23C28/345 ,  C23C28/3455 ,  H01J37/321 ,  H01J37/32495 ,  H01L21/6833

    Abstract: A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.

    Abstract translation: 处理装置包括限定被配置为暴露于等离子体的内部空间的多个壁和多个壁中的至少一个的内表面上的表面涂层。 表面涂层包括形成互连孔隙的孔。 处理装置还包括位于表面涂层的孔的至少一部分中的密封剂。 在一个实施方案中，密封剂可以是固化温度不超过约100℃的热固化密封剂。 在另一个实施方案中，密封剂可以是液体前体形式的粘度不大于500cP的环氧密封剂。 在另一个实施方案中，密封剂可以是低收缩密封剂，其特征在于凝固收缩率不大于8％。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    13.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号：WO2008082977A3

    公开(公告)日：2008-09-12

    申请号：PCT/US2007088080

    申请日：2007-12-19

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A

    Inventor： SIMPSON MATTHEW A

    IPC: H01L21/683

    CPC classification number: H01L21/6833 ,  H01L21/68 ,  Y10T29/49117

    Abstract: An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

    Abstract translation: 公开了一种静电卡盘，其包括衬底，覆盖衬底的图案化导电层，使得图案化导电层限定由间隙分开的电极路径。 静电卡盘还包括覆盖图案化导电层的电阻层和覆盖衬底并设置在电极通路之间的间隙中的低k电介质层。 低k电介质层包括具有与衬底材料不同的相位的材料。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    16.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号：WO2008082978A3

    公开(公告)日：2008-08-21

    申请号：PCT/US2007088082

    申请日：2007-12-19

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A

    Inventor： SIMPSON MATTHEW A

    IPC: H01L21/683

    CPC classification number: H01L21/6833 ,  H02N13/00 ,  Y10T29/49117 ,  Y10T279/23

    Abstract: A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

    Abstract translation: 公开了一种库仑静电吸盘，其包括衬底，覆盖衬底的导电层和覆盖导电层的消弧层。 静电卡盘还包括覆盖消弧层的高k电介质层，其中高k电介质层的介电常数不小于约10，电阻率不小于约1011欧姆 - 厘米。

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