公开(公告)号：EP2580775A4

公开(公告)日：2014-05-07

申请号：EP11793204

申请日：2011-06-09

Applicant: SOLEXEL INC

Inventor： KRAMER KARL JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  KAMIAN GEORGE D ,  MORDO DAVID ,  YONEHARA TAKAO

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

公开(公告)号：WO2013126033A3

公开(公告)日：2013-10-17

申请号：PCT/US2011059177

申请日：2011-11-03

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  TAMILMANI SUBRAMANIAN ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L21/3063 ,  H01L21/02 ,  H01L21/306

CPC classification number: B81C99/0025 ,  B81C2201/0115 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L21/306 ,  H01L31/0284 ,  H01L31/18

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

公开(公告)号：WO2012162704A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039891

申请日：2012-05-29

Applicant: SOLEXEL INC ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  ASHJAEE JAY ,  RANA VIRENDRA V ,  YOKOI SEIICHI ,  RICOLCOL RAFAEL

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.

Abstract translation: 所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。 在操作中，公开了延长可再利用寿命并降低在硅和其它半导体太阳能电池的制造过程中使用的可重复使用的基板或模板的摊销成本的方法。

公开(公告)号：EP2534700A4

公开(公告)日：2015-04-29

申请号：EP11742933

申请日：2011-02-12

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2619790A4

公开(公告)日：2015-11-11

申请号：EP11827704

申请日：2011-09-24

Applicant: SOLEXEL INC

Inventor： YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

IPC: C25F3/12 ,  C25F7/00

CPC classification number: C25F3/12 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F7/00

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：EP2659504A4

公开(公告)日：2014-05-07

申请号：EP11856289

申请日：2011-12-31

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  YOKOI SEIICHI ,  KAMIAN GEORGE D ,  SHARMA SHASHANK ,  ASHJAEE JAY

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06 ,  H01L21/20

CPC classification number: C23C16/45502 ,  C23C16/4412 ,  C23C16/45517 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4587 ,  C23C16/481 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06