公开(公告)号：EP1513234A4

公开(公告)日：2005-10-19

申请号：EP03736075

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI Y ,  ANSAI S ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO O ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: A multibeam semiconductor laser wherein a group III-V nitride compound semiconductor layer having a laser structure is formed on a major surface of a sapphire substrate or the like, and anodes and cathodes are formed on the group III-V nitride compound semiconductor layer. An anode is formed across a cathode, with an insulating film between them. Another anode is formed across another cathode, with an insulating film between them.

Abstract translation: 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：DE60311095D1

公开(公告)日：2007-02-22

申请号：DE60311095

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

公开(公告)号：CA2463169A1

公开(公告)日：2003-04-24

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU ,  TOJO TSUYOSHI

IPC: C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01S5/343 ,  H01L21/205

Abstract: A method for fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconducto r layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate where a plurality of second regions having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region of crystal having a first mean dislocation density, wherein an element region is define d on the nitride based III-V compound semiconductor substrate such that the second region is not included substantially or not included in a light emitting region or an active region.

公开(公告)号：JP2012044111A

公开(公告)日：2012-03-01

申请号：JP2010186436

申请日：2010-08-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  KOBAYASHI NORIHITO ,  YASUHARA DAISUKE ,  SHIMIZU KEISUKE ,  TOMITANI SHIGETAKA ,  MURAKAMI YOSUKE ,  KATSUHARA MASAHISA ,  OE TAKAHIRO ,  KAWASHIMA NORIYUKI ,  TAKAHASHI YUKA ,  FUKUDA TOSHIO ,  ISHII YUI

IPC: H01L21/368 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H05B33/10

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an organic thin film capable of forming a single crystal organic thin film quickly and easily while controlling the thickness and size.SOLUTION: After supplying organic solution 20 to one surface of a film deposition substrate 10 (a wide solution storage region 11 and a narrow solution constriction region 12 connected thereto) supported by a temperature controllable support 1, a temperature controllable moving body 4 is moved along the surface of the support 1 while touching the organic solution 20 independently from the support 1. Temperature TS of the support 1 is set between the solubility curve and supersolubility curve for the organic solution 20, and the temperature TM of the moving body 4 is set on the higher temperature side than the solubility curve.

Abstract translation: 要解决的问题：提供一种能够在控制厚度和尺寸的同时快速且容易地形成能够形成单晶有机薄膜的有机薄膜的方法。 解决方案：在由可控温度支持体1支撑的成膜基板10（宽溶液储存区域11和与其连接的窄溶液收缩区域12）的一个表面上提供有机溶液20之后，将温度可控的移动体4 沿着支撑体1的表面移动，同时独立于载体1接触有机溶液20.载体1的温度TS设置在有机溶液20的溶解度曲线和超溶解曲线之间，并且移动体的温度TM 4设置在比溶解度曲线更高的温度侧。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012044110A

公开(公告)日：2012-03-01

申请号：JP2010186435

申请日：2010-08-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  YASUHARA DAISUKE ,  NOMOTO AKIHIRO ,  MURAKAMI YOSUKE ,  TOMITANI SHIGETAKA

IPC: H01L21/368 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an organic thin film capable of forming a single crystal organic thin film by controlling the position where the crystal nucleus is formed and the direction of crystal growth.SOLUTION: Organic solution 20 is supplied to a wide solution storage region 11 and a narrow solution localization region 12 connected thereto in such a state as the temperature TS of the organic solution 20 becomes T1 which is on the higher temperature side than a solubility curve, and the vapor pressure P in the ambient environment of the organic solution 20 becomes saturation vapor pressure at T1. Subsequently, the temperature TS of the organic solution 20 is lowered from T1 down to T2 which is between the solubility curve and a supersolubility curve.

Abstract translation: 要解决的问题：提供一种通过控制形成晶核的位置和晶体生长方向形成能够形成单晶有机薄膜的有机薄膜的方法。 解决方案：将有机溶液20以与有机溶液20的温度TS成为T1的状态相同的方式供给到宽溶液存储区域11和与其连接的窄溶液定位区域12， 有机溶液20的环境中的溶解度曲线和蒸气压P在T1时成为饱和蒸汽压。 随后，将有机溶液20的温度TS从溶解度曲线和超溶解曲线之间的T1降低到T2。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2006229248A

公开(公告)日：2006-08-31

申请号：JP2006128976

申请日：2006-05-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a semiconductor LED using nitride-based group III-V compound semiconductor with a long lifetime due to a low initial impairment rate, while its aged deterioration and luminescence nonuniformity are very low. SOLUTION: When a semiconductor LED, with a structure in which an InGaN active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, p-type AlGaN cap layer 9 and p-type AlGaN/GaN superlattice clad layer 18 are laminated, in this order, the active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, and p-type AlGaN cap layer 9 must be grown at a growth temperature lower than that of the p-type AlGaN/GaN superlattice clad layer 18. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种使用氮化物系III-V族化合物半导体容易地制造半导体LED的制造方法，该半导体LED由于初始损伤率低而具有长寿命，而其老化劣化和发光不均匀性非常大 低。 解决方案：当具有InGaN活性层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17，p型AlGaN帽层9和p型AlGaN / GaN超晶格的结构的半导体LED 包覆层18依次层叠有源层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17和p型AlGaN覆盖层9必须在低于p的生长温度下生长 型AlGaN / GaN超晶格覆层18.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006093718A

公开(公告)日：2006-04-06

申请号：JP2005288273

申请日：2005-09-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: H01L21/205 ,  H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor having a large low-defect region on a surface, and to provide a manufacturing method of a semiconductor element. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030°C; and in the second stage, a lateral growth is made to progress dominantly at a growing temperature of 1,070°C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a. On the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced, at sections above the low-temperature growth sections 107a. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供在表面上具有大的低缺陷区域的氮化物半导体的制造方法，并提供半导体元件的制造方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成为条纹几何形状，接着在两阶段生长条件下从晶种部分105生长晶体，形成 氮化物半导体层107.在第一阶段中，在1,030℃的生长温度下形成其厚度方向的横截面形状为梯形的低温生长部分107a; 并且在第二阶段中，使横向生长在1070℃的生长温度下主要进行，以在低温生长部分107a之间形成高温生长部分107b。 在氮化物半导体层107的表面上，在低温生长部分107a上方的部分减小了小丘和正常晶格缺陷。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004128521A

公开(公告)日：2004-04-22

申请号：JP2003417116

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device includes a step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region and extending rectilinearly are regularly arranged in parallel with each other in the first crystal region. In the above manufacturing method, the second regions are arranged at an interval of 50 μm or above, one or more rows of the second regions are included, and a device region is demarcated on the nitride III-V compound semiconductor substrate so as not to enable the second regions to be included in the light emitting region of the semiconductor light emitting device. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有优异发光特性的半导体发光器件，非常可靠，使用寿命长。 解决方案：一种制造半导体发光器件的方法包括使形成发光器件结构的氮化物III-V化合物半导体层能够在氮化物III-V化合物半导体衬底上生长的步骤，其中多个第二区域 具有比第一晶体区域所具有的第一平均位错密度高且直线延伸的第二平均位错密度在第一晶体区域中彼此平行地规则排列。 在上述制造方法中，第二区域以50μm以上的间隔配置，包含一行以上的第二区域，在氮化物III-V化合物半导体衬底上划分器件区域， 使得第二区域能够被包括在半导体发光器件的发光区域中。 版权所有（C）2004，JPO

公开(公告)号：JP2002064247A

公开(公告)日：2002-02-28

申请号：JP2000247661

申请日：2000-08-17

Applicant: SONY CORP

Inventor： ANZAI SHINICHI ,  KIJIMA SATORU ,  ASANO TAKEHARU ,  GOTO OSAMU

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser and method of manufacturing the same, which can enlarge an ohmic contact area between a nitride-based III-V compound semiconductor layer and an electrode to reduce contact resistance. SOLUTION: Between a p-type clad layer 18 and a p-side contact layer 19, an insulating layer 21, having an opening 21a at a place which corresponds to current injection region of an active layer 16 is formed. The p-type clad layer 18 has a projecting part 18a, which is salient on the p-side contact layer 19 side in correspondence with the opening 21a of the insulating layer 21. The p-side contact layer 19 consists of a basic growth region 19a formed so as to correspond to the projecting part 18a of the p-type clad layer 18, and a regrowth region 19b, which is grown with the basic growth region 19a and projecting part 18a as a base. The width of the p-side contact layer 19 is enlarged by the regrowth region 19b, which increases the ohmic contact area between the p-side contact layer and the p-side electrode 23, and thereby decreases the contact resistance.

公开(公告)号：JP2001352133A

公开(公告)日：2001-12-21

申请号：JP2000168312

申请日：2000-06-05

Applicant: SONY CORP

Inventor： TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  ASANO TAKEHARU ,  GOTO OSAMU ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  HINO TOMOKIMI ,  KIJIMA SATORU ,  IKEDA MASAO

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser for obtaining a crystal growth layer with less fluctuation in a crystal axis and for improving the characteristics of a device, a semiconductor device and a nitride-family III-V group compound substrate, and their manufacturing method. SOLUTION: A plurality of seed crystal layers 12 provided separately on one surface side of a substrate 11 for growth, and an n-side contact layer 13 that is grown based on the plurality of seed crystal layers and has a growth region in a crosswise direction, are provided. In the seed crystal layer 12, the product of width w1 (unit: μm) of a boundary surface 12a with the n-side contact layer 13 in its arranged direction A and thickness t1 (unit: μm) in a direction where the n-side contact layer 13 is laminated is set to 15 or less, thus reducing the fluctuation of the crystal axis on the n-side contact layer 13, and hence improving the crystallinity of a semiconductor layer from an n-type clad layer 14 to a p-side contact layer 19 being laminated on the n-side contact layer 13.